BCX53 [WILLAS]
SOT-89 Plastic-Encapsulate Transistors; SOT- 89塑封装晶体管
| 型号： | BCX53 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-89 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：501K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
BCX53
SOT-89Plastic-Encapsulate T
ransistors
TRANSISTOR (PNP)
FEATURES
Pb-Free package is available
z
SOT-89
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
z
z
Low Voltage
1. BASE
High Current
2. COLLECTOR
3. EMITTER
APPLICATIONS
z
z
Medium Power General Purposes
Driver Stages of Audio Amplifiers
MARKING:BCX53:AH, BCX53-10:AK, BCX53-16:AL
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
Value
Unit
VCBO
VCEO
V
-100
-80
-5
Collector-Emitter Voltage
V
VEBO
IC
Emitter-Base Voltage
V
Collector Current
-1
500
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
mW
℃/W
℃
RθJA
Tj
250
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO*
Test
conditions
Min
Typ
Max
Unit
IC=-100µA,IE=0
-100
-80
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
IC=-10mA,IB=0
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IE=-100µA,IC=0
-5
VCB=-30V,IE=0
-0.1
-0.1
µA
µA
IEBO
VEB=-5V,IC=0
hFE(1)*
hFE(2)*
hFE(3)*
VCE(sat)*
VBE*
VCE=-2V, IC=-5mA
VCE=-2V, IC=-150mA
VCE=-2V, IC=-0.5A
IC=-0.5A,IB=-50mA
VCE=-2V, IC=-0.5A
VCE=-5V,IC=-10mA, f=100MHz
63
63
40
DC current gain
250
Collector-emitter saturation voltage
Base -emitter voltage
-0.5
-1
V
V
fT
50
MHz
Transition frequency
* Pulse Test
CLASSIFICATION OF hFE(2)
BCX53
BCX53-10
63–160
BCX53-16
RANK
RANGE
63–250
100–250
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
BCX53
SOT-89Plastic-Encapsulate T
ransistors
Typical Characteristics
hFE —— IC
Static Characteristic
-400
-350
-300
-250
-200
-150
-100
-50
1000
100
10
VCE= -2V
COMMON
EMITTER
Ta=25℃
Ta=100 o
C
-2.0mA
-1.8mA
-1.6mA
-1.4mA
-1.2mA
-1.0mA
-0.8mA
-0.6mA
-0.4mA
Ta=25 o
C
IB=-0.2mA
-0
-0
-1
-2
-3
-4
-5
-6
-1
-10
-100
-1000
-1000
-20
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
-1000
-800
-600
-400
-200
-0
-400
-300
-200
-100
-0
β=10
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Cob / Cib ——
fT ——
VCB / VEB
IC
150
1000
f=1MHz
IE=0 / IC=0
Ta=25 o
C
100
50
0
100
10
1
Cib
Cob
VCE=-5V
Ta=25 o
C
-0
-20
-40
-60
-80
-100
-0.1
-1
-10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT IC (mA)
IC ——
VBE
Pc —— Ta
-1000
-100
-10
0.75
0.50
0.25
0.00
Ta=100 o
C
Ta=25℃
-1
VCE=-2V
-0.1
-0
-200
-400
-600
-800
-1000
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
BASE-EMITTER VOLTAGE
VBE(mV)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
BCX53
SOT-89Plastic-Encapsulate T
ransistors
Outline Drawing
SOT-89
.181(4.60)
.173(4.39)
.063(1.60)
.055(1.40)
.061REF
(1.55)REF
.102(2.60)
.091(2.30)
.167(4.25)
.154(3.91)
.023(0.58)
.016(0.40)
.047(1.2)
.031(0.8)
.060TYP
(1.50)TYP
.197(0.52)
.013(0.32)
.017(0.44)
.014(0.35)
.118TYP
(3.0)TYP
Dimensions in inches and (millimeters)
Rev.C
2012-10
WILLAS ELECTRONIC CORP.
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