BC817-XXLT1 [WILLAS]
General Purpose Transistors; 通用晶体管
| 型号： | BC817-XXLT1 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | General Purpose Transistors |
| 文件： | 总3页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
BC817-xxLT1
GeneralPurposeTransistors
NPNSilicon
We declare that the material of product compliance with RoHS requirements.
•
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
MAXIMUM RATINGS
SOT–23
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
45
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
50
V
5.0
V
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
3
COLLECTOR
Sym
a
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
1
BASE
225
1.8
mW
mW/°C
°C/W
Derate above 25°C
2
Thermal Resistance, Junction to Ambien
Total Device Dissipation
θJ
556
EMITTER
Alumina Substrate, (2) TA = 25°
Derate above 25°C
300
2.4
mW
mW/°C
°C/W
°C
Thermal Resistance, Jut
Junction and Storage Tee
R θJA
417
T J , T stg
–55 to +150
DEVICE MARKING
BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = -10 mA)
V (BR)CEO
45
50
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = -10 µA)
V (BR)CES
Emitter–Base Breakdown Voltage
(I E = -1.0 µA)
V (BR)EBO
ICBO
5.0
Collector Cutoff Current
(VCB = 20 V)
—
—
—
—
100
5.0
nA
(VCB = 20 V, TA = 150°C)
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
BC817-xxLT1
GeneralPurposeTransistors
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
(I C= 100 mA, V CE = 1.0 V)
BC817–16
BC817–25
BC817–40
100
—
—
—
—
250
160
250
40
400
600
—
(I C = 500 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
V CE(sat)
—
—
—
V
V
0.7
1.2
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
V BE(on)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
100
—
—
—
—
MHz
pF
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
10
(V CB = 10 V, f = 1.0 MHz)
ORDERING INFORMATION
Device
BC817-16LT1
BC817-25LT1
BC817-40LT1
Marking
6A
Shi
pel
3000/TReel
pe&Reel
6
2012-11
WILLAS ELECTRONIC CORP.
WILLAS
BC817-xxLT1
GeneralPurposeTransistors
SOT-23
.122(3.10)
.106(2.70)
.008(0.20)
.003(0.08)
.080(2.04)
.070(1.78)
.004(0.10)MAX.
.020(0.50)
.012(0.30)
Dimensions in inches and (millimeters)
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
2012-11
WILLAS ELECTRONIC CORP.
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