BAV70DW [WILLAS]

SOT-363 Plastic-Encapsulate Diodes; SOT- 363塑封装二极管
BAV70DW
型号: BAV70DW
厂家: WILLAS ELECTRONIC CORP    WILLAS ELECTRONIC CORP
描述:

SOT-363 Plastic-Encapsulate Diodes
SOT- 363塑封装二极管

二极管 光电二极管
文件: 总3页 (文件大小:368K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WILLAS  
BAV70DW  
SOT-363 Plastic-Encapsulate Diodes  
SWITCHING DIODE  
SOT-363  
FEATURES  
z
z
z
Fast Switching Speed  
Ultra-Small Surface Mount Package  
For General Purpose Switching Applications  
z
z
High Conductance  
Pb-Free package is available  
6
5
2
4
3
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
Moisture Sensitivity Level 1  
z
MAKING: KJA  
1
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
Peak Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
100  
100  
75  
V
300  
Forward Continuous Current  
IFM  
IO  
mA  
mA  
150  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0µs  
@ t = 1.0s  
2
1
IFSM  
A
200  
Power Dissipation  
PD  
RθJA  
TJ  
mW  
625  
150  
Thermal Resistance Junction to Ambient  
Operating Junction Temperature  
Storage Temperature  
/W  
-55~+150  
TSTG  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Max  
Unit  
Reverse breakdown voltage  
V(BR)  
IR= 2.5µA  
75  
V
VR=75V  
2.5  
µA  
Reverse voltage leakage current  
Forward voltage  
IR  
VR=20V  
IF=1mA  
IF=10mA  
IF=50mA  
IF=150mA  
0.025  
715  
855  
1000  
1250  
mV  
VF  
Junction capacitance  
Reveres recovery time  
Cj  
trr  
VR=0, f=1MHz  
2
pF  
IF=IR=10mA,Irr=0.1×IR,  
4
ns  
RL=100  
2012-12  
WILLAS ELECTRONIC CORP.  
WILLAS  
BAV70DW  
SOT-363 Plastic-Encapsulate Diodes  
Typical Characteristics  
Forward Characteristics  
Reverse Characteristics  
10000  
1000  
100  
10  
300  
100  
Ta=100  
10  
Ta=25℃  
1
0.0  
1
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
FORWARD VOLTAGE VF (V)  
REVERSE VOLTAGE VR (V)  
Power Derating Curve  
Capacitance Characteristics  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
250  
200  
150  
100  
50  
Ta=25℃  
f=1MHz  
0
0
4
8
12  
16  
20  
0
25  
50  
75  
100  
125  
150  
REVERSE VOLTAGE VR (V)  
AMBIENT TEMPERATURE Ta ()  
2012-12  
WILLAS ELECTRONIC CORP.  
WILLAS  
BAV70DW  
SOT-363 Plastic-Encapsulate Diodes  
Outline Drawing  
SOT-363  
.087(2.20)  
.071(1.80)  
.030(0.75)  
.021(0.55)  
.010(0.25)  
.003(0.08)  
.056(1.40)  
.047(1.20)  
.004(0.10)MAX.  
.016(0.40)  
.004(0.10)  
Dimensions in inches and (millimeters)  
Rev.D  
2012-12  
WILLAS ELECTRONIC CORP.  

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