2SD1766 [WILLAS]
SOT-89 Plastic-Encapsulate Transistors; SOT- 89塑封装晶体管
| 型号： | 2SD1766 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-89 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
2SD1766
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
FEATURES
SOT-89
1. BASE
z
Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A)
Pb-Free package is available
z
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector dissipation
Value
Unit
40
V
32
V
5
V
2
A
PC
500
150
-55-150
mW
TJ
Junction Temperature
Storage Temperature
℃
Tstg
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
40
32
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
ICBO
IEBO
VCB=20V, IE=0
VEB=4V, IC=0
1
1
μA
μA
DC current gain
hFE(1)
VCE(sat)
fT
VCE=3V, IC=500mA
82
390
0.8
Collector-emitter saturation voltage
Transition frequency
IC=2A, IB=0.2A
V
VCE=5V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
100
30
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
P
Q
R
82-180
120-270
DBQ
180-390
Range
Marking
DBP
DBR
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SD1766
SOT-89 Plastic-Encapsulate Transistors
Typical Characteristics
Static Characteristic
hFE ——
IC
700
600
500
400
300
200
100
0
1000
100
10
COMMON
EMITTER
Ta=25℃
Ta=100℃
2.0mA
1.8mA
1.6mA
Ta=25℃
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
COMMON EMITTER
VCE= 3V
IB=0.2mA
2000
0
1
2
3
4
5
1
10
100
1000
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat ——
IC
VBEsat ——
IC
1000
800
600
400
200
0
300
100
β=10
β=10
Ta=100 ℃
Ta=25℃
Ta=25℃
Ta=100 ℃
10
1
0.1
2000
1000
1
10
100
0.1
1
10
100
1000 2000
COLLECTOR CURREMT IC (mA)
COLLECTOR CURREMT IC (mA)
VBE —— IC
fT —— IC
1000
2000
1000
100
10
COMMON EMITTER
VCE=5V
COMMON EMITTER
VCE=3V
Ta=25℃
100
1
0.1
0.0
10
0.3
0.6
0.9
1.2
5
10
100
40
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (V)
PC —— Ta
Cob/Cib ——
VCB/VEB
600
1000
100
10
f=1MHz
IE=0/IC=0
Ta=25 ℃
Cib
400
200
0
Cob
1
0.1
0
25
50
75
100
125
150
30
1
REVERSE VOLTAGE
10
AMBIENT TEMPERATURE Ta (℃)
V
(V)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SD1766
SOT-89 Plastic-Encapsulate Transistors
Outline Drawing
SOT-89
.181(4.60)
.173(4.39)
.063(1.60)
.055(1.40)
.061REF
(1.55)REF
.102(2.60)
.091(2.30)
.167(4.25)
.154(3.91)
.023(0.58)
.016(0.40)
.047(1.2)
.031(0.8)
.060TYP
(1.50)TYP
.197(0.52)
.013(0.32)
.017(0.44)
.014(0.35)
.118TYP
(3.0)TYP
Dimensions in inches and (millimeters)
Rev.C
2012-10
WILLAS ELECTRONIC CORP.
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