2SB1386 [WILLAS]
SOT-89 Plastic-Encapsulate Transistors; SOT- 89塑封装晶体管
| 型号： | 2SB1386 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | SOT-89 Plastic-Encapsulate Transistors |
| 文件： | 总3页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
2SB1386
SOT-89 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT-89
FEATURES
z
z
z
Low collector saturation voltage
Execllent current-to-gain characteristics
Pb-Free package is available
1. BASE
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
-30
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
-20
-6
V
V
A
A
Continuous Collector Current
Pulsed Collector Current
-5
ICP*
-10
PC
TJ
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.5
150
W
℃
℃
Tstg
-55~150
*Single pulse,PW=10ms
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
-30
-20
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
V
V
μA
ICBO
IEBO
hFE
VCB=-20V,IE=0
-0.5
-0.5
390
-1
μA
Emitter cut-off current
VEB=-5V,IC=0
DC current gain
VCE=-2V,IC=-500mA
IC=-4A,IB=-100mA
VCE=-6V,IC=-50mA,f=30MHz
VCB=-20V,IE=0,f=1MHz
82
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
120
60
MHz
pF
Collector output capacitance
Cob
CLASSIFICATION OF hFE
P
Q
R
Rank
82-180
BHP
120-270
BHQ
180-390
BHR
Range
Marking
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SB1386
SOT-89 Plastic-Encapsulate Transistors
Typical Characterisitics
hFE ——
IC
Static Characteristic
-1.5
-1.2
-0.9
-0.6
-0.3
-0.0
500
400
300
200
100
0
VCE=-2V
COMMON
EMITTER
Ta=25℃
Ta=100℃
-4mA
-3.6mA
Ta=25℃
-3.2mA
-2.8mA
-2.4mA
-2mA
-1.6mA
-1.2mA
-0.8mA
IB=-0.4mA
-1E-3
-0.01
-0.1
-1
-3
-0
-1
-2
-3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
VBEsat ——
VCEsat ——
IC
IC
-0.8
-0.6
-0.4
-0.2
-0.0
-1.6
-1.2
-0.8
-0.4
-0.0
β=40
β=40
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
-1E-3
-0.01
-0.1
-1
-5
-1E-3
-0.01
-0.1
-1
-5
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)
VCB/ VEB
IC —— VBE
Cob/ Cib ——
1000
100
10
-5
f=1MHz
IE=0/ IC=0
Ta=25℃
-1
Cib
Cob
Ta=100℃
Ta=25℃
-0.1
-0.01
VCE=-2V
-1E-3
-0.2
-0.1
-1
-10
-20
-0.4
-0.6
-0.8
-1.0
-1.2
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE VBE (V)
Pc —— Ta
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
2012-10
WILLAS ELECTRONIC CORP.
WILLAS
2SB1386
SOT-89 Plastic-Encapsulate Transistors
Outline Drawing
SOT-89
.181(4.60)
.173(4.39)
.063(1.60)
.055(1.40)
.061REF
(1.55)REF
.102(2.60)
.091(2.30)
.167(4.25)
.154(3.91)
.023(0.58)
.016(0.40)
.047(1.2)
.031(0.8)
.060TYP
.197(0.52)
(1.50)TYP
.017(0.44)
.014(0.35)
.013(0.32)
.118TYP
(3.0)TYP
Dimensions in inches and (millimeters)
Rev.C
2012-10
WILLAS ELECTRONIC CORP.
相关型号：
2SB1386-P-TP
Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
MCC
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