MMBD4148TDW [WEITRON]
Surface Mount Switching Multi-Chip Diode Array; 表面贴装开关多芯片二极管阵列
| 型号： | MMBD4148TDW |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Switching Multi-Chip Diode Array |
| 文件： | 总3页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16TDW
MMBD4148TDW
Surface Mount Switching Multi-Chip
Diode Array
MULTI-CHIP DIODES
150m AMPERES
75 VOLTS
P b
Lead(Pb)-Free
Features:
* Fast Switching Speed
6
5
4
* Ultra-Small Surface Mount Package
* For General Purpose Switching Applications
* High Conductance Power Dissipation
1
2
3
SOT-363
Mechanical Data:
* Case : SOT-363
* Case Material : Molded Plastic. UL Flammability
Classification Ration 94V-0
* Moisture Sensitivity : Level 1 per J-STD-020C
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : See Diagram
* Weight : 0.006 grams(appro)
SOT-363 Outline Dimensions
Unit:mm
A
SOT-363
Dim
A
Min
0.10
Max
0.30
6
5
4
B
C
B
C
D
E
H
J
K
L
M
1.15
2.00
1.35
2.20
1
2
3
0.65 REF
E
D
0.30
1.80
-
0.80
0.25
0.10
0.40
2.20
0.10
1.10
0.40
0.25
H
K
M
L
J
WEITRON
http://www.weitron.com.tw
09-Feb-06
1/3
BAS16TDW
MMBD4148TDW
Maximum Ratings@ TA= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
V
RM
V
Non-Repetitive Peak Reverse Voltage
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
V
RWM
V
75
V
R
V
V
RMS Reverse Voltage
53
R(RMS)
I
mA
mA
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
300
150
FM
I
O
Non-Repetitive Peak Forward Surge Current@ t = 1.0µs
@ t = 1.0s
2.0
1.0
I
A
FSM
P
mW
Power Dissipation (Note 1)
200
625
D
R
°C/W
Thermal Resistant Junction to Ambient Air (Note 1)
θJA
T
°C
°C
Operating Temperature Range
Storage Temperature Range
+150
j
T
-55 to +150
STG
Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (Note 2)
I = 100µA
R
V
(BR)R
75
-
V
Forward Voltage (Note 2)
-
-
-
-
0.715
0.855
1.0
I = 1.0mA
F
V
F
I = 10mA
V
F
I = 50mA
F
1.25
I = 150mA
F
Reverse Current (Note 2)
µA
µA
µA
nA
1.0
50
30
25
V = 75V
R
I
R
V = 75V, Tj = 150°C
R
-
V = 25V, Tj = 150°C
R
V = 20V
R
Total Capacitance
V = 0V, f = 1.0MHz
R
C
-
-
2.0
4.0
pF
ns
T
Reverse Recovery Time
T
rr
I = I =10mA, I =0.1 x I , R =100Ω
F
R
rr
R
L
Notes:2. Short duration test pulse used to minimize self-heating effect.
WEITRON
2/3
09-Feb-06
http://www.weitron.com.tw
BAS16TDW
MMBD4148TDW
Device Marking
Item
Marking
Eqivalent Circuit diagram
1
2
3
6
5
4
BAS16TDW
MMBD4148TDW
KA2
Typical Characteristics
1
10000
1000
100
TA = 150ºC
TA = 125ºC
0.1
TA = 150ºC
TA = 75ºC
TA = 25ºC
TA = 75ºC
TA = 25ºC
TA = 0ºC
TA = -40ºC
10
1
0.01
TA = 0ºC
TA = -40ºC
0.001
0.1
20
40
60
80
100
0
0.5
1.0
0
1.5
VR, REVERSE VOLTAGE(V)
VF,INSTANTANEOUS FORWARD VOLTAGE (V)
Fig.2 Typical Reverse Characteristics
Fig.1 Typical Forward Characteristics
300
250
200
150
100
50
2.0
f = 1.0MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
10
VR,REVERSEVOLTAGE(V)
0
30
40
20
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Fig.4 Power Derating Curve, Total Package
Fig.3 Typical Capacitancevs .Reverse Voltage
WEITRON
http://www.weitron.com.tw
3/3
09-Feb-06
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