BCX53 [WEITRON]
PNP Plastic-Encapsulate Transistor; PNP塑封装晶体管
| 型号： | BCX53 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | PNP Plastic-Encapsulate Transistor |
| 文件： | 总3页 (文件大小：681K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX53
PNP Plastic-Encapsulate Transistor
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
1
2
3
3. EMITTER
SOT-89
MAXIMUM RATINGS ( T =25°C unless otherwise noted)
A
Rating
Symbol
Value
-100
-80
Unit
V
CBO
V
V
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
EBO
V
A
-5.0
-1.0
I
C
Collector Current Continuous
P
T
mW
˚C
500
Total Device Dissipation T =25°C
D
A
+150
J
Junction Temperature Range
Storage Temperature Range
-55 to +150
˚C
Tstg
Device Marking
BCX53=AH , BCX53-10=AK , BCX53-16=AL
OFF CHARACTERISTICS
Characteristics
Symbol
Min
Max
-100
-80
Unit
V
V
V
Collector-Base Breakdown Voltage, I = -100µA, I = 0
V(BR)
V(BR)
V(BR)
I
-
-
-
C
E
CBO
CEO
EBO
Collector-Emitter Breakdown Voltage, I = -10mA, I = 0
C
B
Emitter-Base Breakdown Voltage, I = -10µA, I = 0
-5.0
E
C
Collector Cut-off Current, V = -30V, I = 0
µA
µA
-
-
-0.1
-0.1
CB
E
CBO
Emitter Cut-off Current, V = -5.0V, I = 0
I
EBO
EB
C
WEITRON
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12-Oct-06
BCX53
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Symbol
Min
Typ
Max
Unit
Characteristics
ON CHARACTERISTICS
DC Current Gain
h
FE1
63
63
-
-
-
250
160
250
BCX53
BCX53-10
BCX53-16
V
= -2.0V, I = -150mA
CE
C
100
-
h
h
FE2
V
V
= -2.0V, I = -5.0mA
63
40
-
-
-
-
CE
CE
C
= -2.0V, I = -500mA
FE3
C
Collector-Emitter Saturation Voltage
I = -500mA, I = -50mA
-
V
V
-0.5
-
V
CE(sat)
C
B
Base-Emitter Voltage
= -2.0V, I = -500mA
BE(ON)
-
-
-
-1.0
-
V
V
CE
C
TransitionFrequence
f
T
50
MHz
V
= -5V, I = -10mA, f = 100MHz
CE
C
WEITRON
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12-Oct-06
BCX53
SOT-89 Outline Dimensions
unit:mm
SOT-89
Min
Dim
A
B
C
D
Max
E
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
A
G
H
J
C
E
G
H
J
D
B
K
K
L
1.500TYP
L
3.100
2.900
WEITRON
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12-Oct-06
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