B1100F [WEITRON]
Reverse Voltage 20 to 200V Forward Current 1.0A;
| 型号： | B1100F |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Reverse Voltage 20 to 200V Forward Current 1.0A |
| 文件： | 总6页 (文件大小：1218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B120F thru B1200F
Schottky Barrier Rectifiers
Reverse Voltage 20 to 200V Forward Current 1.0A
P b
Lead(Pb)-Free
FEATURES
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Low power loss,high efficiency
* For use in low voltage high frequency inverters,
free wheeling,and polarity protection applications
* Guardring for over voltage protection
* High temperature soldering guaranteed:
260°C/10 seconds at terminals
Mechanical Data
CATHODE
ANODE
Case: SOD-123FL/MINI SMA
molded plastic over sky die
Terminals: Tin Plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
We declare that the material of product is
Haloggen free (green epoxy compound)
Weight: 0.0155g
Handling precautin::None
1.Electrical Characteristic
Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
B120F B130F B140F B145F B150F B160F B180F B1100F B1150F B1200F
Parameter Symbol
symbol
Unit
V
device marking code
12
20
13
30
14
40
145
45
15
50
16
60
18
80
110
100
115
150
120
200
Maximum repetitive peak reverse
voltage
VRRM
Maximum RMS voltage
VRMS
VDC
14
20
21
30
28
40
31.5
45
35
50
42
60
56
80
70
105
150
140
200
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified
current at TC = 75°C
1.0
30
IF(AV)
A
Peak forward surge current 8.3ms
single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
A
110
40
RθJA
RθJC
Typical thermal resistance (Note 1)
°C/W
–55 to +150
–65 to +175
Operating junction temperature range TJ
storage temperature range TSTG
°C
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
symbol B120F B130F B140F
B145F B150F
B160F B180F B1100F B1150F B1200F Unit
Maximum instantaneous forward
voltage at(IF = 0.1 A, TJ = 25°C)
(IF = 0.7 A, TJ = 25°C)
-
-
-
-
-
-
-
-
0.35
0.45
0.50
-
-
-
-
VF
V
0.55
0.7
0.85
(IF = 1.0 A, TJ = 25°C)
0.5
0.90
0.92
Maximum DC reverse current at rated
DC blocking voltage TA = 25°C
Tj = 125°C
0.5
10
IR
mA
PF
Typical junction capacitance at
4.0V, 1MHz
160
CJ
NOTES:
1. 8.0mm2 (.013mm thick) land areas
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B120F thru B1200F
2.Ratings and Characteristic Curves ( TA = 25°C unless otherwise noted )
Fig. 2 – Maximum Non-repetitive Peak
Fig. 1 – Forward Current Derating Curve
Forward Surge Current
60 Hz
Resistive or
Inductive Load
TJ = TJ max
8.3ms Single
Half Sine-
1.0
0.5
30
15
0
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE:Tc(°C)
1
10
Number of Cycles at 60Hz
Fig 3. – Typical Instantaneous Forward
Fig 4. – Typical Reverse Characteristics
Characteristics
100
10
10
TJ = 25°C
Tj=125
Pulse width = 300µs
1% Duty Cycle
1.0
0.1
Tj=75
Tj=25
1.0
0.1
0.01
0.001
0.01
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig 5. –typical transient thermal
Fig 6. – Typical Junction Capacitance
impedance
1000
100
10
TJ = 25°C
f = 1.0 MHz
Vsig =
100
10
1.0
0.1
0.1
1
10
100
0.01
0.1
1.0
10
Reverse Voltage (V)
t,Pulse duration,sec
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B120F thru B1200F
3. dimension:
SOD-123FL
MILLIMETERS
INCHES
MIN
0.138
0.029
0.103
0.063
DIM
MIN
3.5
MAX
3.9
MAX
0.159
0.037
0.119
0.079
A
B
C
D
E
H
J
0.75
2.6
0.95
3.0
1.6
2.0
0.45Typ
0.018Typ
0.9
1.2
0.036
0.005
0.047
0.009
0.12
0.22
0.8Typ
0.032Typ
K
Suggested solder pad layout
B
C
A
Dimensions in inches and (millimeters)
PACKAGE
SOD-123FL
A
B
C
0.044(1.10) 0.040(1.00)
0.079(2.00)
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B120F thru B1200F
4.Packing information
Unit：mm
Item
Symbol
tolerance
SOD-123FL
Carrier width
A
B
C
d
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
-
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Spocket hole pitch
Embossment center
Overall tape thickness
Tape width
D
1
D
-
D
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
D
D
1
2
E
F
P
P0
1
P
T
W
Reel width
W
1
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B120F thru B1200F
5.Suggested thermal profile for soldering process
1. Storage environment：Temperature=5~40℃ Humidity=55±25%
2. Reflow soldering of surface-mount device
3. Reflow soldering
Profile Feature
Average ramp-up rate(T
Preheat
Soldering Condition
L
to T
P
)
<3℃/sec
- Temperature Min(Tsmin)
- Temperature Max(Tsmax)
150℃
200℃
- Time(min to max)(t
Tsmax to T
- Ramp-up Rate
Time maintained above:
- Temperature (T
- Time(t
Peak Temperature(T
Time within 5℃ of actual Peak
Temperature(T
s
)
60~120sec
L
<3sec
L
)
217℃
60-260sec
L)
P
)
255 -0/+5℃
10~30sec
P
)
Ramp-down Rate
<6℃/sec
Time 25℃ to Peak Temperature
<6minutes
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B120F thru B1200F
6.High reliability test capabilities
Item Test
Condition
Reference
at 260±5℃ for 10±2sec immerse
body into solder 1/16" ± 1/32"
MIL-STD-750D METHOD-2031
Solder Resistance
Solderability
at 245±5℃ for 5 sec
MIL-STD-202F METHOD-208
MIL-STD-750D METHOD-1038
VR=80% rate at Tj =150℃ for 168hr
High Temperature Reverse Bias
Rated average rectifier current
TA=25℃ for 500hrs
MIL-STD-750D METHOD-1027
Forward Operation Life
TA=25℃，IF=IO
On state:power on for 5 min.
Off state:power off for 5 min.
on and off for 500 cycles
MIL-STD-750D METHOD-1036
Intermittent Operation Life
JESD22-A102
Pressure Cooker
15PSIG at TA=121℃ for 4hrs
-55℃ to +125℃ dwelled for 30
min.
MIL-STD-750D METHOD-1051
Temperature Cycling
and transferred for 5min. Total 10
cycles
0℃ for 5min. Rise to 100℃ for
5min.
Total 10 cycles
8.3ms single half sine-wave
superimposed on rated load,one
surge
MIL-STD-750D METHOD-1056
MIL-STD-750D METHOD-4066-2
Thermal Shock
Forward Surge
MIL-STD-750D METHOD-1021
MIL-STD-750D METHOD-1031
Humidity
at TA=85℃，RH=85% for 1000hrs
High Temperature Storage Life
at 175℃ for 1000hrs
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相关型号：
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, PLASTIC, SMB, 2 PIN
DIODES
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