B1100-G [WEITRON]
Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM),;型号: | B1100-G |
厂家: | WEITRON TECHNOLOGY |
描述: | Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), |
文件: | 总3页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
B170 thru B1100
Surface Mount Schottky Barrier Rectifiers
* “G” Lead(Pb)-Free
REVERSE VOLTAGE
70 TO 100 VOLTS
FORWARD CURRENT
1.0 AMPERE
Features:
*Schottky Barrier Chip
*Ideally Suited for Automatic Assembly
*Low Power Loss, High Efficiency
*Surge Overload Rating to 30A Peak
*For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and
Polarity Protection Application
Mechanical Data
SMA(DO-214AC)
*Case : Molded Plastic
*Plastic Material: UL Flammability Classification Rating 94V-0
*Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208
*Polarity: Cathode Band
*Mounting Position: Any
*Weight: 0.064 grams(approx)
Unit:mm
SMA Outline Dimension
SMA
B
Dim
Min
2.20
4.00
1.27
0.15
4.48
0.10
0.76
1.70
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
B
C
D
E
G
H
J
A
J
C
D
G
H
E
WEITRON
http://www.weitron.com.tw
B170 thru B1100
Rating 25 C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Symbol
Characteristic
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
B170 B180 B190 B1100 Unit
VRRM
VRMS
VDC
70
49
70
80
56
80
90
63
90
100
70
Maximum DC Blocking Voltage
Maximum Average Forward
100
IF(AV)
1.0
30
Rectified Current @TC=125 C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
IFSM
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous At 1.0A DC
Maximum DC Reverse Current @Tj=25 C
At Rated DC Blocking Voltage @Tj=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
VF
IR
0.79
0.5
50
80
P
F
CJ
R JL
30
-55 to+125
-55 to+150
TJ
Storage Temperature Range
TSTG
NOTES:1.Measured at 1.0MHz applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to case.
WEITRON
http://www.weitron.com.tw
B170 thru B1100
WE ITR ON
10
1.0
1.0
0.5
0.1
0
0.01
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
TT , TERMINAL TEMPERA TURE (°C)
VF, INST ANT ANEOUS FOR WARD VOL TAGE (V)
FIG.2 Typical Forward Characteristics
FIG.1 Forward Current Derating Curve
1000
100
10
40
30
Tj = 25°C
Single Half Sine-W ave
(JEDEC Method)
f = 1.0MHz
20
10
0
Tj = 150°C
0.1
1
10
100
1
1 0
100
VR , REVERSE VOL TAGE (V)
NUMBER OF CYCLES AT 60 Hz
FIG.4 Typical Junction Capacitance
FIG.3 Max Non-Repetitive Peak Forward
Surge Current
WEITRON
http://www.weitron.com.tw
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