B1020WS [WEITRON]
Surface Mount Schottky Barrier Diode; 表面贴装肖特基二极管
| 型号： | B1020WS |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Surface Mount Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
B1020WS
Surface Mount Schottky Barrier Diode
SCHOTTKY DIODE
1.0 AMPERES
20 VOLTS
P b
Lead(Pb)-Free
Features:
* Ultra high-speed switching
* Very low forward voltage
* Voltage clampingProtection circuits.
Mechanical Data:
* Case: SOD-323
SOD-323
4V-O
* Leads: Solderable per MIL-STD-202, Method 208
* Polarity: Cathode Band
* Weight: 0.004 grams(approx.)
Unit:mm
SOD-323 Outline Demensions
MILLMETERS
Dim Min
Max
1.60
1.80
A
B
C
D
E
H
J
1.15
0.80
0.25
1.35
1.00
0.40
0.15 REF
0.00
0.089
2.30
0.10
0.177
2.70
K
PIN 1.CATHODE
2.ANODE
WEITRON
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06-Feb-09
B1020WS
Maximum Ratings (T =25°C Unless otherwise noted)
A
Value
Characteristic
Symbol
Unit
Continuous Reverse Voltage
V
R
20
V
I
1.0
5.0
A
A
O
Non-Repetitve Peak Forward Surge Current
Thermal Resistance junction to Ambient
I
FSM
2201
1802
°C/W
°C/W
R
θJA
Operating Ambient temperature Range
Operating Temperature Range
Storage Temperature Range
T
-65 to +125
+125
°C
°C
°C
amb
T
J
T
-65 to +150
STG
1. Device mounted on an FR4 printed-circuit board with Cu clad 10x10mm.
2. Device mounted on an FR4 printed-circuit board with Cu clad 40x40mm
Electrical Characteristics (T =25˚C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
Forward Voltage
I =10mA
240
300
480
270
350
550
F
-
mV
V
F
I =100mA
F
I =1000mA
F
Reverse Current
V =5V
5
7
10
20
50
R
I
R
-
-
µA
pF
V =8V
R
V =15V
R
10
Capacitance between terminals
V =5V, f=1.0MHz
R
C
19
25
d
Device Marking
Item
Eqivalent Circuit diagram
Marking
B1020WS
2
V2
1
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B1020WS
Electrical Characteristic curves(T =25˚C)
A
3
5
4
3
2
10
10
10
10
10
I
I
R
(µA)
F
Tamb = 125 °C
Tamb = 125 °C
Tamb = 85 °C
(mA)
2
10
Tamb = 25 °C
10
Tamb = 85 °C
Tamb = 25 °C
1
10
1
-1
V
(V)
10
V
(V)
F
R
0
0.2
0.4
0.6
0
5
10
15
20
25
Fig.1 Forward current as a function of forward
Fig.2 Reverse current as a function of reverse
80
Tamb = 25 °C; f = 1 MHz.
C
d
(pF)
60
40
20
0
V
(V)
0
5
10
15
20
R
Fig.3 Diode capacitance as a function of reverse
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06-Feb-09
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