2SD1899 [WEITRON]
NPN PLASTIC ENCAPSULATE TRANSISTORS; NPN塑料封装晶体管
| 型号： | 2SD1899 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN PLASTIC ENCAPSULATE TRANSISTORS |
| 文件： | 总4页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1899
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b
Lead(Pb)-Free
1.BASE
3
2.COLLECTOR
3.EMITTER
2
1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
D-PAK(TO-252)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Units
Value
60
V
60
V
V
7
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
1
A
W
℃
℃
PC
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
60
60
7
TYP
MAX
-
UNIT
V
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC =1mA,IB=0
V(BR)EBO IE=100μA,IC=0
-
-
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-
V
-
V
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCB=60V,IE=0
10
10
-
μA
μA
-
-
-
-
Emitter cut-off current
VEB=7V,IC=0
VCE=2V,IC=200mA
VCE=2V,IC=600mA
VCE=2V,IC=2A
60
100
50
-
-
DC current gain
400
-
-
-
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=1.5A,IB=150mA
IC=1.5A,IB=150mA
VCE=5V,IC=1.5A
VCB=10V,IE=0,f=1MHz
0.25
1.2
-
V
V
-
-
-
-
120
30
-
MHz
pF
Collector output capacitance
Turn on Time
Cob
-
-
-
ton
0.5
2.0
0.5
VCC=10V,IC=1A,IB1=-IB2=-0.1A
-
-
μs
Switching Time
tstg
Storage Time
Fall Time
tf
-
-
CLASSIFICATION OF hFE(2)
Rank
M
L
K
100-200
160-320
200-400
Range
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2SD1899
Typical Characteristics
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2SD1899
Typical Characteristics
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2SD1899
TO-252 Outline Dimensions
unit:mm
E
TO-252
G
A
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
Dim
A
B
C
D
H
4
J
B
1
2
3
E
G
H
J
K
L
M
K
D
C
L
M
WEITRON
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13-Oct-08
相关型号：
2SD1899-Z-AZ
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, MP-3, 3 PIN
NEC
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