2SC4083 [WEITRON]
NPN Silicon Transistor; NPN硅晶体管
| 型号： | 2SC4083 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN Silicon Transistor |
| 文件： | 总4页 (文件大小：752K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC4083
NPN Silicon Transistor
3
P b
Lead(Pb)-Free
1
2
1. BASE
FEATURES:
2. EMITTER
3. COLLECTOR
* Radio frequency ampliꢀer
* High transition frequency
* High gain with low collector-to base time constant
* Low noise (NF)
SOT-323(SC-70)
* Marking: 1D
( T =25°C unless otherwise noted)
A
Maximum Ratings
Rating
Symbol
Value
20
Unit
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
V
V
Collector-Emitter Voltage
11
Emitter-Base Voltage
3
V
Collector Current -Continuous
50
mA
PD
TJ
Collector Power Dissipation
Junction Temperature
Storage Temperature
0.2
150
W
°C
°C
Tstg
-55 to +150
SOT-323 Outline Demensions
Unit:mm
A
SOT-323
Min
Dim
A
B
C
D
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
B
C
TOP VIEW
D
G
E
E
G
H
J
K
L
H
K
L
M
J
M
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2SC4083
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ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
Min
Typ
Max
-
Unit
V
Collector-base breakdown voltage
IC =10μA, I E =0
20
-
-
-
-
-
-
-
Collector-emitter breakdown voltage
IC = 1mA, IB =0
11
3
-
V
Emitter-base breakdown voltage
IE = 10 μA, IC =0
-
V
V(BR)EBO
ICBO
IEBO
hFE
Collector cut-oꢀ current
VCB =10V, IE =0
-
0.5
0.5
270
0.5
µA
µA
-
Emitter cut-oꢀ current
VEB =2V, IC =0
-
DC current gain
VCE =10V, IC = 5mA
56
-
Collector-base saturation voltage
IC =10mA, IB =5mA
VCE(sat)
V
Transition frequency
VCE =10V,IC =10mA, f =500MHz
fT
-
-
-
-
1.2
-
-
1.5
12
-
GHz
pF
Output capacitance
VCB =10V,IE =0, f =1MHz
Cob
Collector-base time constant
C C rbb
-
pS
·
V
CB =10V,I C =10mA, f=31.8MHz
Noise ꢁgure
3.5
dB
NF
VCE =6V,I =2mA,f =500MHz,
Ω
Rg=50
C
CLASSIFICATION OF h
FE
Rank
N
P
Q
Range
56-120
82-180
120-270
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2SC4083
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Typical Characteristics
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