2SC1623_10 [WEITRON]
NPN General Purpose Transistors; NPN通用晶体管
| 型号： | 2SC1623_10 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | NPN General Purpose Transistors |
| 文件： | 总5页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC1623
NPN General Purpose Transistors
3
1
P b
Lead(Pb)-Free
2
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
V
50
60
V
V
CEO
V
CBO
V
EBO
Emitter-Base Voltage
7
V
I
Collector Current - Continuous
150
mA
C
Total Device Dissipation FR-5 Board
P
D
225
1.8
mW
mW/°C
T =25°C
A
Derate above 25°C
R
Thermal Resistance, Junction to Ambient
°C/W
θJA
556
Total Device Dissipation
Alumina Substrate, TA=25°C
Derate above 25°C
P
D
mW
mW/°C
300
2.4
R
417
θJA
°C/W
Thermal Resistance, Junction to Ambient
Junction Temperature
T
j
-55 to+150
-55 to +150
°C
°C
Storage Temperature
T
stg
WEITRON
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Rev.A 30-Jul-10
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2SC1623
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
I
-
-
-
-
0.1
0.1
µA
µA
CBO
V
= 60V, I = 0
E
CB
EB
I
EBO
V
= 5V, I = 0
C
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
V
-
0.3
V
CE(sat)
0.15
I = 100mA, I = 10mA
C
B
Base-Emitter Saturation Voltage
I = 100mA, I = 10mA
V
V
BE(sat)
1.0
0.86
0.62
-
-
C
B
Base-Emitter On Voltage
I = 1mA,VCE=6.0V
C
0.65
V
BE
V
0.55
120
DC Current Transfer Ration
h
FE
560
V
= 6V, I = 1mA
CE
C
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
f
250
3
MHz
-
-
-
T
V
= 6V, I =10mA
CE
C
-
C
Output Capacitance(V = 6V, I =0, f=1.0MHz)
P
f
ob
CE
E
CLASSIFICATION hFE
Rank
Q
R
S
Range
180-390
120-270
270-560
Marking
L5
L7
L6
WEITRON
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Rev.A 30-Jul-10
2/5
2SC1623
0.50mA
50
100
80
60
40
20
0
VCE= 6 V
TA = 25°C
20
10
50
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V CE ,COLLECTOR TO EMITTER VOLTAGE (V)
V
BE ,BASE TO EMITTER VOLTAGE(V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
10
8
500
200
100
50
6
4
2
20
10
0
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.3 Grounded emitter output characteristics( )
0.5
0.2
500
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
WEITRON
http://www.weitron.com.tw
Rev.A
3/5
30-Jul-10
2SC1623
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
Fig.7 Collector-emitter saturation voltage vs.
collector current (I)
20
500
10
5
200
100
50
2
1
0.2
0.5
1
2
5
10
20
50
–0.5
–1
–2
–5
–10
–20
–50
–100
V CB, COLLECTOR TO BASE VOLTAGE (V)
EB, EMITTER TO BASE VOLTAGE (V)
I E, EMITTER CURRENT (mA)
V
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
Fig.11 Base-collector time constant vs.emitter current
WEITRON
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Rev.A 30-Jul-10
4/5
2SC1623
SOT-23 Outline Dimension
SOT-23
A
Dim
A
B
C
D
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
B
C
TOP VIEW
D
G
E
E
G
H
J
K
L
H
K
L
J
M
M
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5/5
Rev.A 30-Jul-10
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