2SB1182 [WEITRON]
PNP PLASTIC ENCAPSULATE TRANSISTORS; PNP塑料封装晶体管
| 型号： | 2SB1182 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | PNP PLASTIC ENCAPSULATE TRANSISTORS |
| 文件： | 总5页 (文件大小：968K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB1182
PNP PLASTIC ENCAPSULATE TRANSISTORS
P b
Lead(Pb)-Free
1.BASE
3
2.COLLECTOR
3.EMITTER
2
1
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS (T =25˚C)
A
Rating
Symbol
Limits
Unit
V
V
V
V
Collector-Base Voltage
CBO
-40
-32
-5.0
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CEO
V
EBO
I
A
-2.0
1.5
C
Collector Power Dissipation
Junction Temperature
W
P
D
T
j
+150
˚C
˚C
T
-55 to +150
Storage Temperature Range
stg
ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)
A
Min
Typ
Parameter
Symbol
Max
Unit
Collector-Base Breakdown Voltage
I =-50µA
C
BV
BV
BV
-40
-
-
V
V
CBO
CEO
EBO
CBO
EBO
Collector-Emitter Breakdown Voltage
I =-1.0mA
C
-32
-
-
-
-
-
Emitter-Base Breakdown Voltage
I =-50µA
E
-5.0
-
V
I
I
-
-
-1.0
-1.0
µA
µA
V
=-20V
CB
EB
V
=-4.0V
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2SB1182
ON CHARACTERISTICS
DC Current Gain
h
82
-
-
-
390
-0.8
FE(1)
V
=-3V, I =-500mA
-
CE
C
Collector-Emitter Saturation Voltage
I =-2A, I =-200mA
V
V
CE(sat)
C
B
DYNAMIC CHARACTERISTICS
Transition Frequency
f
-
100
50
-
-
MHz
pF
T
V
=-5V, I =-500mA, f=30MHz
CE
C
Output Capacitance
=-10V, I =0, f=1.0MHz
-
C
ob
V
CB
E
CLASSIFICATION OF h
FE(1)
Rank
P
Q
R
Range
82 - 180
120 - 270
180 - 390
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2SB1182
Typical Characteristics
−0.5
V
CE= −3V
Ta=25°C
2.5mA
−
Ta=100°C
25°C
−
1000
−0.4
−
500
−40°C
−
200
100
50
−0.3
−
−
−0.2
−20
−10
−5
−0.1
−
2
IB=0A
0
−1
0
−0.4
−0.8
−1.2
−
1.6
−2
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
VCE= −3V
Ta=25°C
500
500
200
Ta=100°C
25°C
VCE= −6V
−3V
−25°C
−1V
200
100
50
100
50
20
20
−5
−10
−20
−50
−100
−200
−500
−1000
−2000
−5
−10
−20
−50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I (mA)
C
Fig.4 DC current gain vs.
collector current ( )
Fig.3 DC current gain vs.
collector curren ( )
lC/lB=10
−500
Ta=25°C
−500
−200
−200
−100
Ta=100°C
25°C
−100
IC/IB=50
−40°C
−50
−50
20
10
−20
−5
−10
−20
−50
−100
−200
−500 −1000 −2000
−5
−10
−20
−50
−100
−200
−500 −1000 −2000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : I (mA)
C
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
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2SB1182
Typical Characteristics
Ta
=25°C
Ta=25°C
500
V
CE= −5V
−1
I
C
/IB=10
200
100
50
−0.5
−0.2
−0.1
−0.05
5
10
20
50
100 200
500 1000 2000
−5
−10
−20
−50
−100
−200
−500
−1000
−2000
EMITTER CURRENT : I (mA)
E
COLLETOR CURRENT : I
C
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.7 Base-emitter saturation voltage
vs. collector current
−
5
Ta
=
25°C
1MHz
0A
0A
I
C Max (Pulse)
.
P =500µs
W
300
200
Cib
f
I
I
=
−2
E
=
DC
C=
−1
100
50
−
0.5
Cob
PW
=1ms
100ms
P =
W
−
0.2
0.1
0.05
20
10
−
−
Ta=25°C
?Single
−
0.02
nonrepetitive
pulse
−
0.01
−0.5
−1
−2
−5
−10
−20
−30
−0.1 −0.2 −0.5 −1 −2
−5 −10 −20 −50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operation area
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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2SB1182
TO-252 Outline Dimensions
unit:mm
E
TO-252
G
A
4
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
Dim
A
B
C
D
H
J
B
1
2
3
E
G
H
J
K
L
M
K
D
C
L
M
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相关型号：
2SB1182-R-TP
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, LEAD FREE, PLASTIC, DPAK-3
MCC
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