2N7000 [WEITRON]
Small Signal MOSFET N-Channel; 小信号MOSFET N通道
| 型号： | 2N7000 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | Small Signal MOSFET N-Channel |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WEITRON
2N7000
Small Signal MOSFET
N-Channel
DRAIN
3
TO-92
Features:
*Low On-Resistance : 5Ω
2
1
2
1. SOURCE
2. GATE
GATE
3
*Low Input Capacitance: 60PF
*Low Out put Capacitance : ±5PF
*Low Threshole :1.4V(TYE)
*Fast Switching Speed : 10ns
3. DRAIN
1
SOURCE
Maximum Ratings (TA=±5 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
V
Drain-Source Voltage
V
DS
V
GS
60
Gate-Source Voltage
±±0
±00
500
350
357
V
Continuous Drain Current (TA=±5 C)
Pulsed Drain Current(1)
I
D
mA
mA
mW
C/W
I
DM
Power Dissipation (TA=±5 C)
Maximax Junction-to-Ambient
P
D
R
θ
JA
Operating Junction and Storage
Temperature Range
T ,Tstg
J
-55 to 150
C
Device Marking
±N7000=7000
Note 1:
Pulse Width Limited by Maximum Junction Temperature
WEITRON
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2N7000
Electrical Characteristics (T =25 C Unless otherwise noted)
A
Symbol
Min
Max
Unit
Characteristic
Static
Drain-Source Breakdown Voltage
V =0V, I =10 uA
V
V
-
V
(BR)DSS
60
D
GS
Gate-Threshold Voltage
V =V , I =1.0 mA
V
3.0
0.8
GS (th)
GS
D
DS
Gate-body Leakage
V =0V,V =15V
I
nA
-
-10
GSS
DS
GS
Zero Gate Voltage Drain Current
V =48V,V =0V
-
-
1.0
1.0
I
uA
mA
DS
GS
DSS
V =48V,V =0V,T =125 C
DS
GS
j
(2)
On-State Drain Current
V =4.5V, V =10V
I
D (on)
75
-
mA
GS
DS
(2
)
Drain-Source On-Resistance
V =10V, I =500mA
rDS (on)
-
-
GS
D
5.0
6.0
Ω
us
V
V =4.5V, I =75mA
GS
D
(2)
Forward Transconductance
V =10V, I =200mA
g
fs
100
-
DS
D
Drain-Source On-Voltage
V =10V, I =500mA
V
-
-
2.5
0.45
SD(on)
GS
D
V =10V, I =75mA
GS
D
(1)
Dynamic
Input Capacitance
V =25V,V =0V, f=1MHZ
C
60
25
5.0
iss
-
-
DS
GS
Output Capacitance
V =25V,V =0V, f=1MHZ
F
P
C
oss
DS
GS
Reverse Transfer Capacitance
V =25V,V =0V, f=1MHZ
C
rss
-
DS
GS
(1) (3)
Switching
Turn-On Time
Ω
=15V, R =30 ,I =500mA
L D
V
V
t
t
nS
nS
DD
-
-
d(on)
d(off)
10
10
=10V, R =25Ω
GEN
G
Turn-Off Time
Ω
D
V
V
=15V, R =30 , I =500mA
DD
L
=10V, R =25
Ω
GEN
G
Note: 1. For Design Aid Only not Subject to Production Testing.
<
_
<
2. Pulse Test : PW_ 300µs, Duty Cycle 2%
3. Switching Time is Essentially Independent of Operating Temperature .
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2N7000
2.0
1.0
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
DS
= 10 V
T = 25 C
A
25 C
- 55 C
V
GS
= 10 V
9 V
125 C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
, GATE SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
V
GS
FIG. 1 Ohmic Region
FIG.2 Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
V
= V
GS
V
= 10 V
DS
GS
I = 1.0 mA
D
I = 200 mA
D
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
- 60
- 20
+ 20
+ 60
+ 100
+ 140
- 60
- 20
+ 20
+ 60
+ 100
+ 140
T , TEMPERATURE ( C)
T , TEMPERATURE ( C)
FIG.4 Temperature versus Gate
Threshold Voltage
FIG.3 Temperature versus Static
Drain-Source On-Resistance
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2N7000
TO-92 Outline Dimensions
unit:mm
E
TO-92
Min
Dim
A
B
C
D
Max
5.100
2.030
0.600
1.100
0.500
-
C
3.000
1.100
0.380
0.360
4.400
3.430
4.300
E
G
H
J
4.700
J
1.270TYP
K
K
L
2.440
2.640
14.100
14.500
G
WEITRON
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