BYT28X-500 [WEEN]
Dual ultrafast power diodes;
| 型号： | BYT28X-500 |
| 厂家： | 
WeEn Semiconductors |
| 描述： | Dual ultrafast power diodes |
| 文件： | 总10页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYT28X-500
Dual ultrafast power diodes
Rev.01 - 20 August 2018
Product data sheet
1. General description
Dual, common cathode, ultrafast, epitaxial rectifier diodes in a SOT186A package.
2. Features and benefits
•
•
Low forward voltage drop
Fast switching
•
•
Soft reverse recovery characteristics
High thermal cycling performance
3. Applications
•
Output rectifiers in high frequency switched-mode power supplies.
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Values
Unit
Absolute maximum rating
VRRM
repetitive peak reverse
voltage
500
V
IO(AV)
average output current
δ = 0.5 ; square-wave pulse; Th ≤ 84 °C;
both diodes conducting;
10
A
Fig. 1; Fig. 2; Fig. 3
IFRM
IFSM
repetitive peak forward δ = 0.5 ; tp = 25 μs; Th ≤ 108 °C;
10
65
72
A
current
square-wave pulse ; per diode
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
A
forward current
per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse;
A
per diode
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 5 A; Tj = 25 °C; per diode; Fig. 6
IF = 5 A; Tj = 150 °C; per diode; Fig. 6
-
-
1.05
0.95
1.4
V
V
1.05
Dynamic characteristics
trr reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
-
28
60
ns
Tj = 25 °C; per diode; Fig. 7
WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
anode
Simplified outline
Graphic symbol
mb
A
A1
A2
2
K
cathode
K
3
A
anode
sym125
mb
n.c.
mounting base; isolated
1
2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BYT28X-500
TO-220F
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
7. Marking
Table 4. Marking codes
Type number
Marking codes
BYT28X-500
BYT28X-500
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
2 / 10
WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Values
Unit
VRRM
repetitive peak reverse
voltage
500
V
VRWM
crest working reverse
voltage
500
V
VR
reverse voltage
DC
500
V
IO(AV)
average output current
δ = 0.5 ; square-wave pulse; Th ≤ 84 °C;
both diodes conducting;
10
A
Fig. 1; Fig. 2; Fig. 3
IFRM
IFSM
repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Th ≤ 108 °C;
square-wave pulse ; per diode
10
65
72
A
A
A
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
per diode; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse;
per diode
T
storage temperature
-40 to 150
150
°C
°C
stg
Tj
junction temperature
auj1-002
auj1-001
6
10
a = 1.57
P
tot
P
tot
(W)
(W)
1.9
5
4
3
2
1
0
δ = 1
8
6
4
2
0
2.2
2.8
0.5
4.0
0.2
0.1
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
I
(A)
F(AV)
I
(A)
F(AV)
IF(AV) = IF(RMS) × √δ
Vo = 0.918; Rs = 0.0273 Ω
a = form factor = IF(RMS) / IF(AV)
Vo = 0.918 V; Rs = 0.0273 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values; per diode
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values; per diode
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
3 / 10
WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
auj1-004
auj1-003
3
10
FSM
6
I
I
F(AV)
(A)
108°C
(A)
5
4
3
2
1
0
2
10
I
I
FSM
F
t
t
p
T
= 25 °C max
j(init)
10
10
-5
-4
-3
-2
10
10
10
-50
0
50
100
150
(°C)
t
p
(s)
T
h
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values;
per diode
Fig. 3. Forward current as a function of heatsink
temperature; maximum values; per diode
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
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WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance
from junction to
heatsink
per diode; Fig. 5
-
-
7
K/W
both diodes conducting; Fig. 5
-
-
-
5.5
-
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
55
auj1-005
10
Z
th(j-h)
(K/W)
1
per diode
per device
t
p
-1
P
10
10
δ =
T
t
t
p
T
-2
10
-6
-5
-4
-3
-2
-1
10
10
10
10
10
1
10
t
p
(s)
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
-
-
2500
V
Cisol
isolation capacitance
from cathode to external heatsink
-
10
-
PF
©
BYT28X-500
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WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
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WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
11. Characteristics
Table 8. Characteristics
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
VF
forward current
IF = 5 A; Tj = 25 °C; per diode; Fig. 6
IF = 5 A; Tj = 150 °C; per diode; Fig. 6
VR = 500 V; Tj = 25 °C; per diode
VR = 500 V; Tj = 100 °C; per diode
-
-
-
-
1.05
0.95
2
1.4
1.05
10
V
V
IR
reverse current
μA
mA
0.17
0.5
Dynamic characteristics
Qr
reverse charge
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; per diode; Fig. 7
-
-
-
32
28
2
60
60
3
nC
ns
A
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; per diode; Fig. 7
IRM
peak reverse recovery IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
current
Tj = 25 °C; per diode; Fig. 7
dl
dt
F
auj1-006
I
15
10
5
F
I
F
(A)
(3)
t
rr
(2)
(1)
time
25 %
100 %
Q
r
I
I
RM
R
003aac562
0
0
0.5
1
1.5
2
V
F
(V)
Vo = 0.918 V; Rs = 0.0273 Ω
(1) Tj = 150 °C; typical values
Fig. 7. Reverse recovery definitions; ramp recovery
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage;
per diode
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
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WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
12. Package outline
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
7 / 10
WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1
lease consult the most recently issued document before initiating or
P
completing a design.
]
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Disclaimers
Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
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WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
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WeEn Semiconductors
BYT28X-500
Dual ultrafast power diodes
14. Contents
1. General description.......................................................1
2. Features and benefits ...................................................1
3. Applications...................................................................1
4. Quick reference data.....................................................1
5. Pinning information.......................................................2
6. Ordering information.....................................................2
7. Marking...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics................................................5
10. Isolation characteristics .............................................5
11. Characteristics.............................................................6
12. Package outline...........................................................7
13. Legal information ........................................................8
14. Contents.....................................................................10
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 20 August 2018
©
BYT28X-500
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
10 / 10
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