BYC30W-600PT2 [WEEN]
Hyperfast power diode;型号: | BYC30W-600PT2 |
厂家: | WeEn Semiconductors |
描述: | Hyperfast power diode |
文件: | 总10页 (文件大小:371K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYC30W-600PT2
Hyperfast power diode
Rev.01 - 8 September 2017
Product data sheet
1. General description
Hyperfast power diode in a TO247 ( True 2- pin) plastic package.
2. Features and benefits
•
Low thermal resistance
•
•
•
•
Low leakage current
Low reverse recovery current
Reduces switching losses in associated MOSFET or IGBT
Increased creepage distance
3. Applications
•
•
•
Active PFC in air conditioner
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge / full-bridge switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Values
Unit
Absolute maximum rating
VRRM
IF(AV)
IFRM
repetitive peak reverse
voltage
600
30
V
A
A
A
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 117 °C;
Fig. 1; Fig. 2; Fig. 3
repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 117 °C;
current
60
square-wave pulse
IFSM
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4
270
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
295
A
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 30 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6
-
-
2
2.75
V
V
1.38
2
Dynamic characteristics
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
-
18
-
ns
WeEn Semiconductors
BYC30W-600PT2
Hyperfast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
cathode
Simplified outline
Graphic symbol
K
A
1
K
001aaa020
2
A
anode
mb
mb
mounting base; connected to
cathod
K
A
TO247-2L
6. Ordering information
Table 3. Ordering information
Type number
Package
name
Orderable part number Packing
method
Small packing Package
Package
issue date
quantity
version
BYC30W-600PT2
TO247-2L BYC30W-600PT2Q
Tube
30
TO247A-2L 23-Jun-2017
7. Marking
Table 4. Marking codes
Type number
Marking codes
BYC30W-600PT2
BYC30W-600PT2
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BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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September 2017
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WeEn Semiconductors
BYC30W-600PT2
Hyperfast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Values
Unit
VRRM
repetitive peak reverse
voltage
600
V
VRWM
crest working reverse
voltage
600
V
VR
reverse voltage
DC
600
30
V
A
IF(AV)
average forward current
δ = 0.5 ; square-wave pulse; Tmb ≤ 117 °C;
Fig. 1; Fig. 2; Fig. 3
IFRM
IFSM
repetitive peak forward
current
δ = 0.5 ; tp = 25 μs; Tmb ≤ 117 °C;
square-wave pulse
60
A
A
A
non-repetitive peak
forward current
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
Fig. 4
270
295
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse
T
storage temperature
junction temperature
-55 to 175
175
°C
°C
stg
Tj
alc15-002
alc15-001
δ = 1
80
100
tot
(W)
P
tot
P
a = 1.57
(W)
1.9
2.2
80
60
40
20
0
0.5
60
40
20
0
2.8
0.2
0.1
4.0
0
6
12
18
24
(A)
30
0
12
24
36
F(AV)
48
I
F(AV)
I
(A)
IF(AV) = IF(RMS) × √δ
Vo = 1.620 V; Rs = 0.0132 Ω
a = form factor = IF(RMS) / IF(AV)
Vo = 1.620 V; Rs = 0.0132 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
©
BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYC30W-600PT2
Hyperfast power diode
alc15-004
alc15-003
4
3
2
10
FSM
36
I
I
F(AV)
(A)
117°C
(A)
30
24
18
12
6
10
10
I
F
I
FSM
t
t
p
T
= 25 °C max
j(init)
10
10
0
-5
-4
-3
-2
10
10
10
-50
0
50
100
150
(°C)
200
t
p
(s)
T
mb
Fig. 3. Forward current as a function of mounting base
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
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BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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WeEn Semiconductors
BYC30W-600PT2
Hyperfast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
0.8
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
40
-
K/W
alc15-005
1
Z
th(j-mb)
(K/W)
-1
10
10
10
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
t
p
-2
-3
P
δ =
T
δ = 0.01
single pulse
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
10
t
(s)
p
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
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BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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BYC30W-600PT2
Hyperfast power diode
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
VF
forward current
IF = 30 A; Tj = 25 °C; Fig. 6
IF = 30 A; Tj = 150 °C; Fig. 6
VR = 600 V; Tj = 25 °C
-
-
-
-
2
2.75
2
V
1.38
V
IR
reverse current
-
-
10
1
μA
mA
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
reverse charge
IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
-
-
51
205
18
34
54
26
3
-
-
-
-
-
-
-
-
nC
nC
ns
ns
ns
ns
A
IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
trr
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
IF = 30 A; VR = 400 V; dIF/dt = 500 A/μs;
Tj = 25 °C; Fig. 7
IRM
peak reverse recovery IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
current
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
7.7
A
dl
dt
F
alc15-006
I
80
60
40
20
0
F
I
F
(A)
t
rr
time
25 %
(2)
(3)
(1)
100 %
Q
r
I
I
RM
R
003aac562
0
1
2
3
4
V
F
(V)
Vo = 1.620 V; Rs = 0.0132 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 7. Reverse recovery definitions; ramp recovery
Fig. 6. Forward current as a function of forward voltage
©
BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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BYC30W-600PT2
Hyperfast power diode
11. Package outline
TO247-2L
Plastic single-ended through-hole package; heatsink mounted;1 mounting hole; 2 leads TO-247
E1
P1
P
A
E
A1
D2
q
Note2
D1
D
b1
L1
Note1
L
Q
b
c
e
Note:
1. Mold resin protrusion.
2. Metal exposed with Sn plating.
©
BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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BYC30W-600PT2
Hyperfast power diode
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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12. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
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Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1
lease consult the most recently issued document before initiating or
P
completing a design.
]
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
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whether the WeEn Semiconductors product is suitable and fit for the
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associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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multiple devices. The latest product status information is available on
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Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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WeEn Semiconductors accepts no liability for inclusion and/or use of non-
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BYC30W-600PT2
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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BYC30W-600PT2
Hyperfast power diode
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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WeEn Semiconductors
BYC30W-600PT2
Hyperfast power diode
13. Contents
1. General description.......................................................1
2. Features and benefits ...................................................1
3. Applications...................................................................1
4. Quick reference data.....................................................1
5. Pinning information.......................................................2
6. Ordering information.....................................................2
7. Marking...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics................................................5
10. Characteristics.............................................................6
11. Package outline ...........................................................7
12. Legal information ........................................................8
13. Contents.....................................................................10
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 8 September 2017
©
BYC30W-600PT2
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WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
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September 2017
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