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型号: | BTA440Z-800BT |
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描述: | 3Q Hi-Com Triac |
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BTA440Z-800BT
3Q Hi-Com Triac
Rev.02 - 28 May 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a IITO3P package intended
for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT"
triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max)
=
150 °C) without the aid of a snubber. It is used in applications where "high junction operating
temperature capability" is required.
2. Features and benefits
•
High current TRIAC
•
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability (Tj(max) = 150 °C)
High voltage capability
Least sensitive gate for highest noise immunity
Low thermal resistance
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Insulated tab rated at 2500Vrms
3. Applications
•
•
•
Applications subject to high temperature (Tj(max) = 150 °C)
High current / high surge applications
High power / industrial controls - e.g. heating, motors, lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak off-state
-
-
800
V
voltage
IT(RMS)
ITSM
RMS on-state current
full sine wave; Tmb ≤ 110 °C;
Fig. 1; Fig. 2; Fig. 3
-
-
-
-
40
A
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
400
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
-
-
-
440
150
A
Tj
junction temperature
°C
Static characteristics
WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
-
-
-
-
50
50
mA
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IH
holding current
on-state voltage
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 56.6 A; Tj = 25 °C; Fig. 10
-
-
-
-
80
mA
V
VT
1.5
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
1000
15
-
-
-
-
V/μs
dICOM/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T1
main terminal 1
T2
T1
2
T2
main terminal 2
gate
G
sym051
3
G
mb
n.c.
mounting base; isolated
1
2
3
IITO3P (SOT1292)
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Packing
Small packing Package
Package
Name
method
quantity
version
issue date
BTA440Z-800BT
IITO3P
BTA440Z-800BTQ
Tube
30
SOT1292
21-July-2017
7. Marking
Table 4. Marking codes
Type number
Marking code
BTA440Z-800BT
BTA440Z-800BT
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BTA440Z-800BT
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
28 May 2019
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
IT(RMS)
ITSM
repetitive peak off-state
voltage
-
800
V
RMS on-state current
full sine wave; Tmb ≤ 110 °C;
Fig. 1; Fig. 2; Fig. 3
-
-
40
A
A
non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig 4; Fig 5
400
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
tp = 10 ms; sine-wave pulse
IG = 100 mA
-
-
-
440
800
150
A
I2t
I2t for fusing
A2s
dIT/dt
rate of rise of on-state
current
A/μs
IGM
peak gate current
peak gate power
tp = 20 μs
tp = 20 μs
-
8
A
PGM
PG(AV)
-
40
1
W
W
°C
°C
average gate power
storage temperature
junction temperature
-
T
stg
-40
-
150
150
Tj
aab909-001
aab909-002
110
T(RMS)
50
T(RMS)
I
I
(A)
(A)
110 °C
90
70
50
30
40
30
20
10
0
10
-2
-1
10
10
1
10
-50
0
50
100
150
(°C)
surge duration (s)
T
mb
f = 50 Hz; Tmb = 110 °C
Fig. 1. RMS on-state current as a function of mounting Fig. 2. RMS on-state current as a function of surge
base temperature; maximum values
duration; maximum values
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
28 May 2019
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
aab909-003
50
105
conduction form
P
tot
T
mb(max)
(°C)
angle,
α
factor
a
(W)
α = 180 °
120 °
α
(degrees)
40
30
20
10
0
114
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
90 °
60 °
α
123
30 °
132
141
150
0
10
20
30
40
50
I
(A)
T(RMS)
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
aab909-004
500
I
I
T
I
TSM
(A)
TSM
400
t
1/f
T
j(init)
= 25 °C max
300
200
100
0
2
3
1
10
10
10
number of cycles (n)
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
©
BTA440Z-800BT
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Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
aab909-005
4
10
I
I
T
I
TSM
(A)
TSM
t
t
p
3
10
T
j(init)
= 25 °C max
(1)
2
10
10
-5
-4
-3
-2
-1
10
10
10
10
10
t
p
(s)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig 6
-
-
0.9
K/W
Rth(j-a)
thermal resistance
from junction to
ambient free air
in free air
-
50
-
K/W
aab909-006
10
th(j-mb)
(K/W)
Z
1
-1
-2
-3
10
10
10
P
t
t
p
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Isolation Characteristics
Table 7. Isolation Characteristics
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Tmb = 25 °C
-
-
2500
V
©
BTA440Z-800BT
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
11. Characteristics
Table 8. Characteristics
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max
Unit
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
-
-
-
-
-
-
50
50
50
85
160
85
mA
mA
mA
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 56.6 A; Tj = 25 °C; Fig. 10
VD = 12 V; Tj = 25 °C; Fig. 11
VD = 400 V; Tj = 150 °C
-
-
80
1.5
1.3
-
mA
V
VT
VGT
on-state voltage
gate trigger voltage
-
-
-
0.8
V
0.2
0.45
V
ID
off-state current
VD = 800 V; Tj = 25 °C
-
-
-
-
10
2
μA
mA
VD = 800 V; Tj = 150 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
1000
15
-
-
-
-
V/μs
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit
A/ms
©
BTA440Z-800BT
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
28 May 2019
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
aab909-007
aab909-008
3
3
I
L
I
GT
I
L(25°C)
I
GT(25°C)
(3)
2
2
(2)
(1)
1
0
1
0
-50
0
50
100
150
-50
0
50
100
150
T (°C)
j
T (°C)
j
(1) T2+ G+
(2) T2+ G-
(3) T2- G-
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of
junction temperature
junction temperature
aab909-009
aab909-010
3
80
T
(A)
I
I
H
I
H(25°C)
60
2
40
20
0
(1)
(2)
(3)
1
0
-50
0
50
100
150
0
1
2
3
V
T
(V)
T (°C)
j
Vo = 0.928 V; Rs = 0.0068 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 10. On-state current as a function of on-state
voltage
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
aab909-011
1.6
V
GT
V
GT(25°C)
1.2
0.8
0.4
-50
0
50
100
150
T (°C)
j
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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BTA440Z-800BT
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12. Package outline
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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BTA440Z-800BT
3Q Hi-Com Triac
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13. Legal information
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Data sheet status
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Product
[short] data
sheet
Production
This document contains the product
specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[1
lease consult the most recently issued document before initiating or
P
completing a design.
]
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Disclaimers
Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
©
BTA440Z-800BT
All information provided in this document is subject to legal disclaimers.
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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WeEn Semiconductors
BTA440Z-800BT
3Q Hi-Com Triac
14. Contents
1. General description.......................................................1
2. Features and benefits ...................................................1
3. Applications...................................................................1
4. Quick reference data.....................................................1
5. Pinning information.......................................................2
6. Ordering information.....................................................2
7. Marking...........................................................................2
8. Limiting values ..............................................................3
9. Thermal characteristics................................................6
10. Isolation characteristics .............................................6
11. Characteristics.............................................................7
12. Package outline.........................................................10
13. Legal information ......................................................11
14. Contents.....................................................................13
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 28 May 2019
©
BTA440Z-800BT
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WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
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