WS512K32-17G1UMA [WEDC]
SRAM Module, 512KX32, 17ns, CMOS, CQFP68, 23.90 X 23.90 MM, 3.57 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68;型号: | WS512K32-17G1UMA |
厂家: | WHITE ELECTRONIC DESIGNS CORPORATION |
描述: | SRAM Module, 512KX32, 17ns, CMOS, CQFP68, 23.90 X 23.90 MM, 3.57 MM HEIGHT, HERMETIC SEALED, CERAMIC, QFP-68 静态存储器 |
文件: | 总13页 (文件大小:485K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
WS512K32-XXX
White Electronic Designs
512Kx32 SRAM MODULE, SMD 5962-94611
FEATURES
n
Access Times of 15*, 17, 20, 25, 35, 45, 55ns
n Organized as 512Kx32, User Configurable as
1Mx16 or 2Mx8
n
Packaging
n Commercial, Industrial and Military Temperature
66 pin, PGA Type, 1ꢀ075" square, Hermetic
Ceramic HIP (Package 400)ꢀ
Ranges
n TTL Compatible Inputs and Outputs
n 5 Volt Power Supply
68 lead, 40mm Hermetic Low Profile CQFP,
3ꢀ5mm (0ꢀ140") (Package 502)1
68 lead, Hermetic CQFP (G2U), 22ꢀ4mm (0ꢀ880")
square (Package 510) 3ꢀ56mm (0ꢀ140") heightꢀ
n Low Power CMOS
n
Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
68 lead, Hermetic CQFP (G2L), 22ꢀ4mm (0ꢀ880")
square, 5ꢀ08mm (0ꢀ200") high (Package 528)ꢀ
68 lead, Hermetic CQFP (G1U)1, 23ꢀ9mm (0ꢀ940")
square (Package 519) 3ꢀ57mm (0ꢀ140") heightꢀ
Designed to fit JEDEC 68 lead 0ꢀ990" CQFJ
footprint (Figꢀ 3)ꢀ
n Weight
WS512K32N-XH1X - 13 grams typical
WS512K32-XG2UX - 8 grams typical
WS512K32-XG1UX1 - 5 grams typical
WS512K32-XG1TX - 5 grams typical
WS512K32-XG4TX1 - 20 grams typical
WS512K32-XG2LX - 8 grams typical
68 lead, Hermetic CQFP (G1T), 23ꢀ9mm (0ꢀ940")
square (Package 524) 4ꢀ06mm (0ꢀ160") heightꢀ
*15ns Access Time available only in Commercial and Industrial
Temperatureꢀ This speed is not fully characterized and is subject to
change without noticeꢀ
Note 1: Package Not Recommended For New Design
FIGꢀ 1 PIN CONFIGURATION FOR WS512K32N-XH1X
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
1
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
May2003, Rev12
WS512K32-XXX
White Electronic Designs
FIGꢀ 2 PIN CONFIGURATION FOR WS512K32-XG4TX1
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18
WE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
CS1-4
OE
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
FIGꢀ 3 PIN CONFIGURATION FOR WS512K32-XG2UX, WS512K32-XG2LX,
WS512K32-XG1TX AND WS512K32-XG1UX1
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
2
WS512K32-XXX
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Mode
CS
H
L
OE
X
WE
X
Data I/O
High Z
Power
Standby
Active
Active
Active
Parameter
Symbol
TA
Min
-55
Max
+125
+150
Vcc+0ꢀ5
150
Unit
°C
°C
V
Standby
Read
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
L
H
Data Out
High Z
TSTG
VG
-65
L
H
X
H
Out Disable
Write
-0ꢀ5
L
L
Data In
TJ
°C
V
VCC
-0ꢀ5
7ꢀ0
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
VIH
Min
4ꢀ5
2ꢀ2
-0ꢀ5
-55
Max
5ꢀ5
Unit
V
Parameter
Symbol
COE
Conditions
Max Unit
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp (Mil)
OE capacitance
V
IN = 0 V, f = 1ꢀ0 MHz 50 pF
VCC + 0ꢀ3
+0ꢀ8
V
WE1-4 capacitance
HIP (PGA)
CQFP G4T
CWE
V
IN = 0 V, f = 1ꢀ0 MHz pF
20
50
20
VIL
V
TA
+125
°C
CQFP G2U/G1U/G1T/G2L
CS1-4 capacitance
CCS
CI/O
V
IN = 0 V, f = 1ꢀ0 MHz 20 pF
Data I/O capacitance
V
I/O = 0 V, f = 1ꢀ0 MHz 20 pF
IN = 0 V, f = 1ꢀ0 MHz 50 pF
Address input capacitance CAD
V
This parameter is guaranteed by design but not testedꢀ
DC CHARACTERISTICS
(VCC = 5ꢀ0V, VSS = 0V, TA = -55°C TO +125°C)
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
Output Leakage Current
ILI
VCC = 5ꢀ5, VIN = GND to VCC
1
0
µA
µA
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5ꢀ5
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5ꢀ5
1
0
Operating Supply Current x 32 Mode ICC x 32
660
80
mA
mA
V
Standby Current
ISB
Output Low Voltage
VOL
IOL = 8mA for 15 - 35ns,
0ꢀ4
IOL = 2ꢀ1mA for 45 - 55ns, Vcc = 4ꢀ5
Output High Voltage
VOH
IOH = -4ꢀ0mA for 15 - 35ns,
IOH = -1ꢀ0mA for 45 - 55ns, Vcc = 4ꢀ5
2ꢀ4
V
NOTE: DC test conditions: VIH = VCC -0ꢀ3V, VIL = 0ꢀ3V
DATA RETENTION CHARACTERISTICS
(TA= -55°C TO +125°C)
Parameter
Symbol
Conditions
Units
Min
Max
5ꢀ5
28
Data Retention Supply Voltage
Data Retention Current
VDR
CS ³ VCC - 0ꢀ2V
VCC = 3V
2ꢀ0
V
ICCDR1
ICCDR2
mA
mA
Low Power Data Retention
Current (WS512K32L-XXX)
VCC = 3V
16
3
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS512K32-XXX
White Electronic Designs
AC CHARACTERISTICS
(VCC = 5ꢀ0V, VSS = 0V, TA = -55°C TO +125°C)
Parameter
Symbol
-15*
-17
-20
-25
-35
-45
-55
Units
Read Cycle
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Read Cycle Time
tRC
tAA
15
0
17
0
20
0
25
0
35
0
45
0
55
0
ns
ns
ns
ns
ns
ns
ns
Address Access Time
15
17
20
25
35
45
55
Output Hold from Address Change tOH
Chip Select Access Time
tACS
tOE
tCLZ1
15
8
17
9
20
10
25
12
35
25
45
25
55
25
Output Enable to Output Valid
Chip Select to Output in Low Z
2
0
2
0
2
0
2
0
2
2
4
0
4
0
4
0
Output Enable to Output in Low Z tOLZ1
Chip Disable to Output in High Z tCHZ1
Output Disable to Output in High Z tOHZ1
1
1
2
2
1
1
1
2
2
1
1
2
2
1
1
1
*15ns Access Time available only in Commercial and Industrial Temperatureꢀ This speed is not fully characterized and is subject to change
without noticeꢀ
1ꢀ This parameter is guaranteed by design but not testedꢀ
AC CHARACTERISTICS
(VCC = 5ꢀ0V, VSS = 0V, TA = -55°C TO +125°C)
Parameter
Symbol
-15*
-17
-20
-25
-35
-45
-55
Units
Write Cycle
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
1
1
1
1
1
5
3
3
0
3
1
1
1
1
1
7
5
5
1
5
20
1
25
35
45
55
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
5
5
1
1
7
7
25
25
1
1
2
1
3
2
1
5
1
7
25
ns
Address Setup Time
Address Hold Time
2
2
0
2
2
0
3
2
0
4
2
0
4
2
5
5
1
0
2
5
5
tAH
0
2
ns
ns
Output Active from End of Write tOW1
Write Enable to Output in High Z
Data Hold Time
tWHZ1
8
9
1
1
3
1
5
tDH
0
0
0
0
0
0
ns
*15ns Access Time available only in Commercial and Industrial Temperatureꢀ This speed is not fully characterized and is subject to change
without noticeꢀ
1ꢀ This parameter is guaranteed by design but not testedꢀ
2ꢀ The Address Setup Time of minimum 2ns is for the G2U, G1U and H1 packagesꢀ tAS minimum for the G4T package is 0nsꢀ
FIGꢀ 4 AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3ꢀ0
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1ꢀ5
1ꢀ5
V
Notes:
VZ is programmable from -2V to +7Vꢀ
IOL & IOH programmable from 0 to 16mAꢀ
Tester Impedance Z0 = 75 ýꢀ
VZ is typically the midpoint of VOH and VOLꢀ
IOL & IOH are adjusted to simulate a typical resistive load circuitꢀ
ATE tester includes jig capacitanceꢀ
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
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WS512K32-XXX
White Electronic Designs
FIGꢀ 5 TIMING WAVEFORM - READ CYCLE
FIGꢀ 6 WRITE CYCLE - WE CONTROLLED
FIGꢀ 7 WRITE CYCLE - CS CONTROLLED
WS32K32-XHX
5
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS512K32-XXX
White Electronic Designs
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE,
HIP (H1)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE
CQFP (G4T)1
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
6
WS512K32-XXX
White Electronic Designs
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
ALL LINEAR DIMENSIONSARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
25.15 (0.990) – 0.25 (0.010) MAX
5.10 (0.200) MAX
22.36 (0.880) – 0.25 (0.010) MAX
0.25 (0.010) – 0.10 (0.002)
0.23 (0.009) REF
24.0 (0.946)
– 0.25 (0.010)
R 0.127
(0.005)
1.37 (0.054) MIN
0.004
2O / 9O
0.89 (0.035)
– 1.14 (0.045)
1.27 (0.050) TYP
0.38 (0.015) – 0.05 (0.002)
20.31 (0.800) REF
0.940" TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
7
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS512K32-XXX
White Electronic Designs
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW
PROFILE CQFP (G1U)1
ALL LINEAR DIMENSIONSARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note1: Package Not Recommended For New Design
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
8
WS512K32-XXX
White Electronic Designs
PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE
CQFP (G1T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
9
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS512K32-XXX
White Electronic Designs
ORDERING INFORMATION
W S 512K 32 X - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened-55°C to +125°C
I = Industrial
-40°C to 85°C
0°C to +70°C
C = Commercial
PACKAGETYPE:
H1= Ceramic Hex-In-line Package, HIP (Package 400)
G2U = 22ꢀ4mm Ceramic Quad Flat Pack, CQFP (Package 510)
G2L = 22ꢀ4mm Ceramic Quad Flat Pack, CQFP (Package 528)
G4T1 = 40mm Low Profile CQFP (Package 502)
G1U1 = 23ꢀ9mm Low Profile CQFP (Package 519)
G1T = 23ꢀ9mm Low Profile CQFP (Package 524)
ACCESS TIME (ns)
IMPROVEMENT MARK:
Blank = Standard Power
N = No Connect at pin 21 and 39 in HIP for Upgrades
L = Low Power Data Retention
ORGANIZATION, 512Kx32
User configurable as 1Mx16 or 2Mx8
SRAM
WHITE ELECTRONIC DESIGNS CORP9
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
10
WS512K32-XXX
White Electronic Designs
DEVICE TYPE
SPEED
PACKAGE
SMD NOꢀ
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-94611 05HTX
5962-94611 06HTX
5962-94611 07HTX
5962-94611 08HTX
5962-94611 09HTX
5962-94611 10HTX
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-94611 05HYX
5962-94611 06HYX
5962-94611 07HYX
5962-94611 08HYX
5962-94611 09HYX
5962-94611 10HYX
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
68 lead CQFP (G2U)
68 lead CQFP (G2U)
68 lead CQFP (G2U)
68 lead CQFP (G2U)
68 lead CQFP (G2U)
68 lead CQFP (G2U)
5962-94611 05HMX
5962-94611 06HMX
5962-94611 07HMX
5962-94611 08HMX
5962-94611 09HMX
5962-94611 10HMX
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
68 lead CQFP (G1U)1
68 lead CQFP (G1U)1
68 lead CQFP (G1U)1
68 lead CQFP (G1U)1
68 lead CQFP (G1U)1
68 lead CQFP (G1U)1
5962-94611 05H9X
5962-94611 06H9X
5962-94611 07H9X
5962-94611 08H9X
5962-94611 09H9X
5962-94611 10H9X
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
512K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
5962-94611 05HAX
5962-94611 06HAX
5962-94611 07HAX
5962-94611 08HAX
5962-94611 09HAX
5962-94611 10HAX
Note 1: Package Not Recommended For New Design
11
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WS512K32-XXX
White Electronic Designs
Document Title
512K x 32 SRAM Multi-Chip Package
Revision History
Rev # History
Release Date Status
Initial
October 1996
Preliminary
Preliminary
Change (Pgꢀ 1, 3)
January 1997
1ꢀ1 Change Operation Supply Current from 520mA To 540mA
1ꢀ2 Change Data Retention Current from 12mA to 28mAꢀ
Change (Pgꢀ 1, 2, 8, 10, 11)
1ꢀ1 Delete G2 Package
November 1997
February 1998
April 1998
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Change (Pgꢀ 1, 9)
1ꢀ1 Add SMD Case Outline M for G2T
Change (Pgꢀ 1, 3, 8)
1ꢀ1 Remove Low Capacitance package option
Change (Pgꢀ 1, 6, 8)
1ꢀ1 Add H1 package
December 1998
March 1999
Change (Pgꢀ 1, 4, 6, 9, 10)
1ꢀ1 Remove H2 package
1ꢀ2 Change logo to WEDC logo
Rev 2
Change (Pgꢀ 1, 3, 4, 8)
May 1999
Final
1ꢀ1 Change status from Preliminary to Final
1ꢀ2 Make package descriptions consistent
1ꢀ3 Add 15ns as available in Commercial and Industrial Temperatures onlyꢀ
Rev 4
Rev 5
Rev 6
Change (Pgꢀ 1, 3)
1ꢀ1 Change Standby Current (Isb) from 60mA to 80mA Maximum
June 1999
Final
Final
Final
Change (Pgꢀ 1, 2, 3, 4, 7, 8)
1ꢀ1 Add G1U package
November 1999
Change (Pgꢀ 1, 8)
February 2000
1ꢀ1 Change G1U lead foot length from 0ꢀ64mm to 0ꢀ84mm Ref
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
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WS512K32-XXX
White Electronic Designs
Rev 7
Change (Pgꢀ 1, 3, 9)
October 2000
Final
1ꢀ1 Change Operating Supply Current from 540mA to 660mA Maximum
1ꢀ2 Add Low Power Data Retention Current of 16mA to Data Retention Characteristics table
1ꢀ3 Add Low Power Data Retention (L) option to Ordering Information
Rev 8
Rev 9
Change (Pgꢀ 1, 2, 6, 7, 9, 10)
1ꢀ1 Change G2T and G4T package status to Not Recommended For New Design
October 2001
Final
Final
Change (Pgꢀ 1, 2, 3, 8, 9, 10)
1ꢀ1 Add G1T package
1ꢀ2 Remove Hi-Reliability Product Title
November 2001
August 2002
Rev 10 Change (Pgꢀ 1, 2, 3, 4, 7, 8, 9, 10, 11)
1ꢀ1 Remove G2T package
Final
1ꢀ2 Add G2U package
1ꢀ3 Remove Package to be Developed note for G4T
Rev 11 Change (Pgꢀ 1,2,4,8,10,11,13)
February 2002
Final
Final
1ꢀ1 Change G1U package status to Not Recommended For New Designs
Rev 12 Change (Pgꢀ 1,2,3,7,8,10,11,13)
1ꢀ1 Add G2L package
May 2003
13
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