WMF512K8-150CM5 [WEDC]
512Kx8 MONOLITHIC FLASH, SMD 5962-96692; 512Kx8单片闪存， SMD 5962-96692
| 型号： | WMF512K8-150CM5 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | 512Kx8 MONOLITHIC FLASH, SMD 5962-96692 |
| 文件： | 总13页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMF512K8-XXX5
White Electronic Designs
512Kx8 MONOLITHIC FLASH, SMD 5962-96692
FEATURES
ꢀ
Access Times of 60, 70, 90, 120, 150ns
Packaging
ꢀ
ꢀ
Organized as 512Kx8
ꢀ
Commercial, Industrial and Military Temperature
Ranges
• 32 pin, Hermetic Ceramic, 0.600" DIP
(Package 300)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5 Volt Programming. 5V 10ꢀ Supply.
Low Power CMOS
• 32 lead, Hermetic Ceramic, 0.400" SOJ
(Package 101)
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
• 32 pin, Rectangular Ceramic Leadless Chip
Carrier (Package 601)
Page Program Operation and Internal Program
Control Time.
• 32 lead Flatpack (Package 220)
1,000,000 Erase/Program Cycles Minimum
Sector Erase Architecture
ꢀ
ꢀ
Note: For programming information refer to Flash Programming 4M5 Application Note.
This product is subject to change without notice.
• 8 equal size sectors of 64K bytes each
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
Pin Configuration For WMF512K8-XXX5
Pin Configuration For WMF512K8-XCLX5
32 DIP
32 CSOJ
32 Flatpack
32 CLCC
Top View
Top View
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
1
32
VCC
2
3
4
5
31 WE#
30 A17
29 A14
28 A13
27 A8
4 3 2 1 32 31 30
5
6
7
8
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
A14
A13
A8
6
7
26 A9
8
9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A9
9
A11
OE#
A10
CS#
I/O7
10
11
12
13
14
15
16
10
11
12
13
I/O0
14 15 16 17 18 19 20
VSS
Pin Description
A0-18
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
I/O0-7
CS#
OE#
WE#
VCC
VSS
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
ABSOLUTE MAXIMUM RATINGS (1)
RECOMMENDED OPERATING CONDITIONS
Parameter
Operating Temperature
Supply Voltage (VCC) (1)
Unit
°C
V
V
°C
Parameter
Supply Voltage
Symbol
VCC
VIH
VIL
TA
Min
4.5
2.0
-0.5
-55
-40
11.5
Max
5.5
VCC + 0.5
+0.8
+125
+85
12.5
Unit
V
V
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A9 Voltage for Sector Protect
Signal Voltage Range(any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance - erase/program cycles (Mil Temp)
A9 Voltage for sector protect (VID) (3)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs
may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC voltage on
output and I/O pins is VCC + 0.5V. During voltage transitions, outputs may overshoot
to Vcc + 2.0 V for periods of up to 20ns.
V
°C
°C
V
°C
TA
VID
20
years
cycles
V
100,000 min
-2.0 to +14.0
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
CAD VI/O = 0 V, f = 1.0 MHz 15 pF
COE VIN = 0 V, f = 1.0 MHz 15 pF
CWE VIN = 0 V, f = 1.0 MHz 15 pF
CCS VIN = 0 V, f = 1.0 MHz 15 pF
CI/O VI/O = 0 V, f = 1.0 MHz 15 pF
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is
+13.5V which may overshoot to 14.0 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS — CMOS COMPATIBLE
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Symbol
ILI
Conditions
Min
Max
10
10
50
60
Unit
µA
µA
mA
mA
mA
V
Input Leakage Current
Output Leakage Current
VCC Active Current for Read (1)
VCC = 5.5, VIN = GND to VCC
VCC = 5.5, VIN = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
CS# = VIL, OE# = VIH
VCC = 5.5, CS# = VIH, f = 5MHz
IOL = 8.0 mA, VCC = 4.5
ILOx32
ICC1
ICC2
ICC4
VOL
VCC Active Current for Program or Erase (2)
VCC Standby Current
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
1.6
0.45
VOH1
VLKO
IOH = -2.5 mA, VCC = 4.5
0.85 x VCC
3.2
V
V
4.2
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE# at VIH
CC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
.
2.
I
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
-60
-70
-90
-120
-150
Parameter
Symbol
Unit
Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
60
0
40
0
70
0
45
0
90
0
45
0
120
0
50
0
150
0
50
0
ns
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
t
AVEL
t
AS
ns
Data Setup Time
Data Hold Time
t
DVEH
t
DS
40
0
45
0
45
0
50
0
50
0
ns
ns
t
EHDX
t
DH
Address Hold Time
tELAX
tEHEL
tAH
tCPH
40
20
45
20
45
20
50
20
50
20
ns
ns
µs
sec
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
t
t
WHWH1
300
15
300
15
300
15
300
15
300
15
WHWH2
t
GHEL
0
0
0
0
0
Chip Programming Time
Chip Erase Time (3)
11
64
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase time is 8sec.
AC Test Conditions
AC TEST CIRCUIT
Parameter
Typ
Unit
V
Input Pulse Levels
VIL = 0, VIH = 3.0
IOL
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
5
1.5
1.5
ns
V
V
Current Source
D.U.T.
VZ 1.5V
(Bipolar Supply)
Notes:
Ceff = 50 pf
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOH
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
3
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
-60
-70
-90
-120
-150
Parameter
Symbol
tAVAV tWC
Unit
Min Max Min Max Min Max Min Max Min Max
Write Cycle Time
60
0
40
0
70
0
45
0
90
0
45
0
120
0
150
0
ns
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWH
tCS
tWP
tAS
50
0
50
0
ns
Data Setup Time
Data Hold Time
Address Hold Time
tDVWH
tWHDX
tWHAX
tWHWL
tWHWH1
tWHWH2
tGHWL
tDS
tDH
tAH
40
0
40
20
45
0
45
20
45
0
45
20
50
0
50
20
50
0
50
20
ns
ns
ns
ns
µs
sec
ms
µs
sec
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
tWPH
300
15
300
15
300
15
300
15
300
15
0
50
0
50
0
50
0
50
0
50
tVCS
11
64
11
64
11
64
11
64
11
64
tOES
tOEH
0
10
0
10
0
10
0
10
0
10
ns
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase time is 8sec.
4. For Toggle and Data# Polling.
AC CHARACTERISTICS – READ ONLY OPERATIONS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
-60
-70
-90
-120
-150
Unit
Parameter
Symbol
Min Max Min Max Min Max Min Max Min Max
60 70 90 120 150
Read Cycle Time
tAVAV
tRC
tACC
tCE
tOE
tDF
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
60
60
35
20
20
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
tDF
30
35
Output Hold from Address, CS# or OE# Change,
whichever is First
tOH
0
0
0
0
0
NOTES:
1. Guaranteed by design, but not tested
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
AC WAVEFORMS FOR READ OPERATIONS
tRC
Addresses
CS#
Addresses Stable
tACC
tDF
tOE
OE#
WE#
tCE
tOH
High Z
High Z
Outputs
Output Valid
WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED
Data# Polling
Addresses
5555H
PA
PA
t
WC
tAH
tRC
tAS
CS#
OE#
WE#
t
GHWL
tWP
tWHWH1
tWPH
t
CS
tDF
tDH
tOE
A0H
PD
I/OOUT
I/O7#
Data
tDS
tOH
5.0 V
tCE
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. I/O7# is the output of the complement of the data written to the device.
4. I/OOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
t
AH
Addresses
CS#
5555H
2AAAH
5555H
5555H
2AAAH
SA
tAS
tGHWL
OE#
WE#
tWP
t
t
WPH
tCS
DH
Data
AAH
55H
80H
AAH
55H
10H/30H
tDS
V
CC
tVCS
NOTES:
1. SA is the Sector Address for Sector Erase.
AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED
ALGORITHM OPERATIONS
t
CH
CS#
OE#
WE#
t
DF
t
OE
tOEH
tCE
t
OH
High Z
I/O
7 =
I/O7#
I/O7
Valid Data
tWHWH 1 or 2
Data
I/O0-7
Valid Data
I/O0-6 = Invalid
I/O0-6
t
OE
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS
Data# Polling
Addresses
WE#
5555H
tWC
PA
PA
tAH
tAS
tGHEL
OE#
CS#
tCP
tWHWH1
tCPH
tDH
tWS
I/O7#
A0H
PD
I/OOUT
Data
tDS
5.0 V
Notes:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. I/O7# is the output of the complement of the data written to the device.
4. I/OOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
PACKAGE 101: 32 LEAD, CERAMIC SOJ
21.1 (0.830) 0.25 (0.010)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
0.2 (0.008)
0.05 (0.002)
11.3 (0.442)
0.30 (0.012)
9.55 (0.376) 0.25 (0.010)
1.27 (0.050) 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220: 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
0.25 (0.010)
PIN 1
2.60 (0.102) MAX
IDENTIFIER
10.41 (0.410)
0.13 (0.005)
10.16 (0.400)
0.51 (0.020)
0.43 (0.017)
0.05 (0.002)
1.27 (0.050) TYP
19.05 (0.750) TYP
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
8
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016)
15.04 (0.592)
0.3 (0.012)
4.34 (0.171) 0.79 (0.031)
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
0.05 (0.002)
0.84 (0.033)
0.4 (0.014)
15.25 (0.600)
0.25 (0.010)
2.5 (0.100)
TYP
1.27 (0.050)
0.1 (0.005)
0.46 (0.018)
0.05 (0.002)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
7.62 (0.300) TYP
3.81
(0.150) TYP
5.08
(0.200)
TYP
0.56 (0.022)
0.71 (0.028)
10.16
(0.400)
TYP
PIN 1
0.38 (0.015) x 45°
PIN 1 IDENTIFIER
11.25 (0.443)
14.15 (0.557)
1.63 (0.064)
2.54 (0.100)
13.79 (0.543)
14.15 (0.557)
1.02 (0.040) x 45°
3 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
10
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
ORDERING INFORMATION
W M F 512K 8 - XXX X X 5 X
WHITE ELECTRONIC DESIGNS CORP.
MONOLITHIC
Flash
ORGANIZATION, 512K x 8
ACCESS TIME (ns)
PACKAGE TYPE:
C = 32 Pin Ceramic DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DE = 32 Lead Ceramic SOJ (Package 101)
FE = 32 Lead Flatpack (Package 220)
DEVICE GRADE:
M= Military Screened
I = Industrial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
C = Commercial
VPP PROGRAMMING VOLTAGE
5 = 5V
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
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White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
DEVICE TYPE SECTOR SIZE
SPEED
PACKAGE
SMD NO.
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
32 pin DIP (C)
5962-96692 01HXX
5962-96692 02HXX
5962-96692 03HXX
5962-96692 04HXX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
32 lead SOJ (DE)
5962-96692 01HYX
5962-96692 02HYX
5962-96692 03HYX
5962-96692 04HYX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
32 lead Flatpack (FE)
5962-96692 01HUX
5962-96692 02HUX
5962-96692 03HUX
5962-96692 04HUX
70ns
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
512K x 8 Flash Monolithic
64KByte
64KByte
64KByte
64KByte
150ns
120ns
90ns
32 lead Flatpack (FF)
32 lead Flatpack (FF)
32 lead Flatpack (FF)
32 lead Flatpack (FF)
5962-96692 01HTX
5962-96692 02HTX
5962-96692 03HTX
5962-96692 04HTX
70ns
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
12
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
WMF512K8-XXX5
White Electronic Designs
Document Title
512K x 8 Flash Monolithic
Revision History
Rev #
History
Release Date Status
Rev 1
Initial Release
September 1996
May 1997
Preliminary
Final
Changes (Pg. 1)
1.1 Change status to Final
Changes (Pg. 1)
1.1 Correct typo of Ceramic
Changes (Pg. 10)
1.1 Remove pedestal from Flatpack package drawing
Changes (Pg. 1)
1.1 Change name from ‘FP’ to Flatpack
February 1998
April 1998
Final
Final
Final
February 1999
Rev 2
Changes (Pg. 1, 2, 3, 4, 13)
May 1999
Final
2.1 Change number of max program/erases to 1,000,000
2.2 Change temperature of max program/erases to 25C
2.3 Absolute Maximum Ratings Table:
2.3.1 Change Data Retention to 20years
2.3.2 Change Endurance to 100,000 cycles minimum
2.4 Write/Erase/Program Operations Tables:
2.4.1 Change tWHWH1 to 300µs
2.4.2 Add Note (1) Typical tWHWH1 = 7µs
2.4.3 Change tWHWH2 to 15sec
2.4.4 Add Note (2) Typical tWHWH2 = 1 sec
2.4.5 Change Chip Programming Time to 11 sec
2.4.6 Change Chip Erase Time too 64 sec
2.4.7 Add Note (3) Chip Erase Time = 8 sec
2.5 Ordering Information
2.5.1 Change Company Name to White EDC
2.6 Change Title Style to new WEDC look
Rev 3
Rev 4
Changes (Pg. 1, 2, 10, 12, 13)
May 1999
Final
Final
3.1 Change package 206 to package 220
3.2 Remove temperature range notice for Endurance
3.3 Change width spec to 0.457" minimum for package 601
Changes (Pg. 1, 3, 4)
4.1 Add 60ns speed grade option
January 2003
Rev 5
Rev 6
Changes (Pg. 1, 11, 13)
April 2005
Final
Final
5.1 Add 'T' case outline for 'FF' package
Changes (Pg. 1, 13)
6.1 Change revision history Rev 2.4.1 to 300 µs
6.2 Change revision history Rev 2.4.2 to 7µs
November 2005
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2005
Rev. 6
13
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
相关型号：
WMF512K8-150CM5A
Flash, 512KX8, 150ns, CDIP32, 0.600 INCH, HERMETIC SEALED, CERAMIC, SDIP-32
MICROSEMI
WMF512K8-150CQ5A
Flash, 512KX8, 150ns, CDIP32, 0.600 INCH, HERMETIC SEALED, SINGLE CAVITY, CERAMIC, SDIP-32
MERCURY
WMF512K8-150DEC5
Flash, 512KX8, 150ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MICROSEMI
WMF512K8-150DEC5A
Flash, 512KX8, 150ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MICROSEMI
WMF512K8-150DEC5A
Flash, 512KX8, 150ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MERCURY
WMF512K8-150DEI5
Flash, 512KX8, 150ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MICROSEMI
WMF512K8-150DEI5A
Flash, 512KX8, 150ns, CDSO32, 0.400 INCH, HERMETIC SEALED, CERAMIC, SOJ-32
MICROSEMI
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