WF512K64-70G4WM5 [WEDC]
512Kx64 5V FLASH MODULE; 512Kx64 5V闪存模块
| 型号： | WF512K64-70G4WM5 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | 512Kx64 5V FLASH MODULE |
| 文件： | 总10页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WF512K64-XG4WX5
HI-RELIABILITY PRODUCT
512Kx64 5V FLASH MODULE PRELIMINARY*
FEATURES
■ 5 Volt Programmingꢀ 5V ± 10% Supplyꢀ
■ Low Power CMOS, 6ꢀ5mA Standby
■ Access Times of 70, 90, 120, 150ns
■ Packaging
■ Embedded Erase and Program Algorithms
■ TTL Compatible Inputs and CMOS Outputs
■ Built-in Decoupling Caps for Low Noise Operation
■ Page Program Operation and Internal Program Control Time
■ Weight
116 lead, 40mm square, Hermetic CQFP (Package 504)
■ 100,000 Erase/Program Cycles Minimum
■ Sector Architecture
8 equal size sectors of 64KBytes each
Any combination of sectors can be concurrently erasedꢀ
Also supports full chip erase
WF512K64-XG4WX5 - 20 grams typical
■ Organized as 512Kx64, user configurable as 1Mx32, 2Mx16,
*
This data sheet describes a product under development, not fully character-
ized, and is subject to change without noticeꢀ
or 4Mx8ꢀ
■ Commercial, Industrial and Military Temperature Ranges
Note: Programming information available upon requestꢀ
FIGꢀ 1 PIN CONFIGURATION FOR WF512K64-XG4WX5
BLOCK DIAGRAM
WE CS
1
WE
CS
2
WE CS
x
x
WE CS
8
TOP VIEW
2
8
1
OE
0-18
A
8
1
2
......
512K x 8
512K x 8
512K x 8
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
I/O60
I/O59
I/O58
I/O57
I/O56
GND
I/O55
I/O54
I/O53
I/O52
I/O51
I/O50
I/O49
I/O48
GND
I/O47
I/O46
I/O45
I/O44
I/O43
I/O42
I/O41
I/O40
GND
I/O39
I/O38
I/O37
I/O36
I/O35
I/O
I/O
I/O
I/O
I/O
3
4
5
6
7
102
101
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
8
8
8
8
I/O...
I/O56-63
I/O0-7
I/O8-15
GND
I/O
8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
GND
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O0-63
A0-18
WE1-8
CS1-8
OE
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
May 1999 Rev.2
1
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
WF512K64-XG4WX5
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
(TA = +25°C)
Parameter
Unit
°C
V
Parameter
Symbol
Conditions
Max
100
20
Unit
pF
Operating Temperature
-55 to +125
-2%0 to +7%0
-2%0 to +7%0
-65 to +150
+300
OE capacitance
COE
CWE
CCS
CI/O
CAD
V
V
V
V
V
IN = 0 V, f = 1%0 MHz
IN = 0 V, f = 1%0 MHz
IN = 0 V, f = 1%0 MHz
I/O = 0 V, f = 1%0 MHz
IN = 0 V, f = 1%0 MHz
Supply Voltage Range (VCC)
WE capacitance
CS capacitance
pF
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
V
20
pF
°C
°C
Data I/O capacitance
Address input capacitance
20
pF
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
100
pF
20 years
This parameter is guaranteed by design but not tested%
Endurance (write/erase cycles) (Mil Temp)
A9 Voltage for sector protect (VID) (3)
100,000 cycles min%
-2%0 to +14%0
V
NOTES:
RECOMMENDED OPERATING CONDITIONS
1% Stresses above the absolute maximum rating may cause permanent damage
to the device% Extended operation at the maximum levels may degrade perfor-
mance and affect reliability%
2% Minimum DC voltage on input or I/O pins is -0%5V% During voltage transitions,
inputs may overshoot VSS to -2%0 V for periods of up to 20ns% Maximum DC
voltage on output and I/O pins is VCC + 0%5V% During voltage transitions, outputs
may overshoot to Vcc + 2%0 V for periods of up to 20ns%
3% Minimum DC input voltage on A9 pin is -0%5V% During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns% Maximum DC input voltage
on A9 is +13%5V which may overshoot to 14%0 V for periods up to 20ns%
Parameter
Symbol
VCC
VIH
Min
4%5
Max
5%5
Unit
V
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp% (Mil%)
Operating Temp% (Ind%)
A9 Voltage for Sector Protect
2%0
VCC + 0%5
+0%8
V
VIL
-0%5
-55
V
TA
+125
+85
°C
°C
V
TA
-40
VID
11%5
12%5
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5ꢀ0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
ILI
Conditions
Min
Max
10
Unit
Input Leakage Current
VCC = 5%5, VIN = GND to VCC
VCC = 5%5, VIN = GND to VCC
CS = VIL, OE = VIH, f = 5MHz
CS = VIL, OE = VIH
µA
µA
mA
mA
Output Leakage Current
VCC Active Current for Read (1)
VCC Active Current for Program or Erase (2)
ILOx32
ICC1
10
380
480
ICC2
VCC Standby Current
VCC Static Current
Output Low Voltage
ICC4
ICC3
VOL
VCC = 5%5, CS = VIH, f = 5MHz
VCC = 5%5, CS = VIH
13
1%2
mA
mA
V
IOL = 8%0 mA, VCC = 4%5
0%45
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
VOH1
VLKO
IOH = -2%5 mA, VCC = 4%5
0%85 X VCC
V
V
3%2
4%2
1% The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz)% The frequency component typically is less than 2 mA/
MHz, with OE at VIH%
2% ICC active while Embedded Algorithm (program or erase) is in progress%
3% DC test conditions: VIL = 0%3V, VIH = VCC - 0%3V
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
2
WF512K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5ꢀ0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Write Cycle Time
tAVAV
tWC
tWS
tCP
tAS
150
0
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
tWLEL
tELEH
45
0
45
0
50
0
50
0
ns
tAVEL
ns
Data Setup Time
tDVEH
tEHDX
tELAX
tDS
tDH
tAH
tCPH
45
0
45
0
50
0
50
0
ns
Data Hold Time
ns
Address Hold Time
45
20
45
20
50
20
50
20
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Chip and Sector Erase Time (2)
Read Recovery Time
tEHEL
ns
tWHWH1
tWHWH2
tGHEL
300
15
300
15
300
15
300
15
µs
sec
ns
0
0
0
0
Chip Programming Time
Chip Erase Time (3)
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1% Typical value for tWHWH1 is 7µs%
2% Typical value for tWHWH1 is 1sec%
3% Typical value for Chip Erase Time is 8sec%
AC TEST CONDITIONS
FIGꢀ 2
AC TEST CIRCUIT
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3%0
V
ns
V
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1%5
1%5
V
NOTES:
VZ is programmable from -2V to +7V%
IOL & IOH programmable from 0 to 16mA%
Tester Impedance Z0 = 75 ý%
VZ is typically the midpoint of VOH and VOL%
IOL & IOH are adjusted to simulate a typical resistive load circuit%
ATE tester includes jig capacitance%
3
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
WF512K64-XG4WX5
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(VCC = 5ꢀ0V, TA = -55°C to +125°C)
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWC
tCS
tWP
tAS
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWH
tDVWH
tWHDX
45
0
45
0
50
0
50
0
ns
ns
Data Setup Time
tDS
tDH
tAH
tWPH
45
0
45
0
50
0
50
0
ns
Data Hold Time
ns
Address Hold Time
t
WHAX
45
20
45
20
50
20
50
20
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
tWHWL
tWHWH1
tWHWH2
tGHWL
ns
300
15
300
15
300
15
300
15
µs
sec
ns
0
0
0
0
tVCS
50
50
50
50
µs
sec
ns
Chip Programming Time
Output Enable Setup Time
11
64
11
64
11
64
11
64
tOES
tOEH
0
0
0
0
Output Enable Hold Time (4)
Chip Erase Time (3)
10
10
10
10
ns
sec
NOTES:
1% Typical value for tWHWH1 is 7µs%
2% Typical value for tWHWH1 is 1sec%
3% Typical value for Chip Erase Time is 8sec%
4% For Toggle and Data Polling%
AC CHARACTERISTICS READ ONLY OPERATIONS
(VCC = 5ꢀ0V, TA = -55°C to +125°C)
Parameter
Symbol
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
tACC
tCE
tOE
tDF
tDF
tOH
70
90
120
150
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
30
35
Output Hold from Address, CS or OE Change,
whichever is First
0
0
0
0
1% Guaranteed by design, but not tested
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
4
WF512K64-XG4WX5
FIGꢀ 3
AC WAVEFORMS FOR READ OPERATIONS
5
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
WF512K64-XG4WX5
FIGꢀ 4
WRITE/ERASE/PROGRAM
OPERATION, WE CONTROLLED
NOTES:
1% PA is the address of the memory location to be programmed%
2% PD is the data to be programmed at byte address%
3% D7 is the output of the complement of the data written to each chip%
4% DOUT is the output of the data written to the device%
5% Figure indicates last two bus cycles of four bus cycle sequence%
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
6
WF512K64-XG4WX5
FIGꢀ 5
AC WAVEFORMS CHIP/SECTOR
ERASE OPERATIONS
NOTE:
1% SA is the sector address for Sector Erase%
7
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
WF512K64-XG4WX5
FIGꢀ 6
AC WAVEFORMS FOR DATA POLLING
DURING EMBEDDED ALGORITHM OPERATIONS
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
8
WF512K64-XG4WX5
FIGꢀ 7
ALTERNATE CS CONTROLLED
PROGRAMMING OPERATION TIMINGS
Notes:
1% PA represents the address of the memory location to be programmed%
2% PD represents the data to be programmed at byte address%
3% D7 is the output of the complement of the data written to each chip%
4% DOUT is the output of the data written to the device%
5% Figure indicates the last two bus cycles of a four bus cycle sequence%
9
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
WF512K64-XG4WX5
PACKAGE 504: 116 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4W)
5.1 (0.200) MAX
1.27 (0.050)
± 0.1 (0.005)
39.6 (1.56) ± 0.38 (0.015) SQ
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
1.27 (0.050)
REF
0.38 (0.015)
± 0.08 (0.003)
68 PLACES
0.25 (0.010)
± 0.05 (0.002)
38 (1.50) REF
4 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
W F 512K64 - XXX G4W X 5
VPP PROGRAMMING VOLTAGE
5 = 5V
DEVICE GRADE:
M = Military Screened
I = Industrial
C = Commercial
-55°C to +125°C
-40°C to +85°C
0°C to + 70°C
PACKAGE TYPE:
G4W = 116 Lead 40mm Ceramic Quad Flat Pack, CQFP (Package 504)
ACCESS TIME (ns)
ORGANIZATION, 512K x 64
User configurable as 1M x 32, 2M x 16 or 4M x 8
Flash
WHITE ELECTRONIC DESIGNS CORP&
WhiteElectronicDesignsCorporation•Phoenix, AZ•(602)437-1520
1 0
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