8P512SRA0205C15 [WEDC]
SRAM Card, 256KX16, 150ns, CMOS, CARD2-68;
| 型号： | 8P512SRA0205C15 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | SRAM Card, 256KX16, 150ns, CMOS, CARD2-68 静态存储器 内存集成电路 |
| 文件： | 总10页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCMCIA SRAM Memory Card
SRA Series
SRAM Memory Card 256KB through 8MB
General Description
Features
• High Performance SRAM memory Card
The WEDC SRAM Series (SRA) memory cards offer a
high performance nonvolatile storage solution for code
and data storage, disk caching, and write intensive
mobile and embedded applications.
• Single 5 Volt Supply
- (3.3V/5V operation is available as an option)
• Fast Access times: 150ns
Packaged in PCMCIA type I or type II housing (type II
for cards with extended battery backup time), the
WEDC SRAM SRA series is based on 1 or 4Mbit
SRAM memories, providing densities from 256
Kilobytes to 8 Megabytes.
• x8/x16 PCMCIA standard interface
• Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100µA typical
The SRA series of SRAM memory cards requires a 5V
power supply and operates at speeds to 150ns. The
cards are based on advanced CMOS technology
providing very low power and reliable data retention
• Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
•7 months - type I card
characteristics. WEDC’s SRAM cards contain
a
•18 months - type II card
rechargeable lithium battery and recharge circuitry,
eliminating the need for replaceable batteries found in
many SRAM cards.
typical based on 4MB (lower densities will
have greater storage times)
• Unlimited write cycles, no endurance issues
WEDC’s standard cards are shipped with WEDC’s
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.
• Optional Features:
• 2KB EEPROM attribute memory containing
CIS
• Optional Hardware Write Protect switch
• PC Card Standard Type I or Type II Form Factor
Block Diagram
4MB SRAM Card Shown
[A1..A19]
address
buffer
SRAM
SRAM
512K x 8
512K x 8
SRAM
SRAM
[A20..A22]
512K x 8
512K x 8
/CSHi
/CSLi
SRAM
512K x 8
SRAM
512K x 8
+
+
+ +
+
decoder
and
CE1#
CE2#
WE#
OE#
REG#
A0
/CSHi
control
logic
SRAM
512K x 8
SRAM
512K x 8
/CS-A
/RD
/WR
CTRL
/RD
/WR
[A1..A11]
/CS-A
/RD
/WR
S1
ATTRIBUTE
MEMORY
Vcc
WP
Write Prot
Switch
VS1
VS2
GND
NC
NC
CTRL
I/O BUFFER
[DO..D7]
[D8..D15]
[DO..D7]
[D8..D15]
Vcc
+
Notes: 1. pull down resistor (min 100k)
2. pull up resistor (min 10k)
Power Management
and
BVD1
BVD2
Battery Control
to internal
power
supply
+
Lithium Bat.
1
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Pinout
Pin Signal name I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Active
Pin Signal name I/O
Function
Ground
Active
LOW
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
N.C.
N.C.
A17
A18
A19
A20
A21
Vcc
Vpp2
A22
A23
A24
A25
VS2
N.C.
Wait#
N.C.
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
CD2#
GND
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
I
O
I/O
I/O
I/O
I/O
I
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Address bit 13
Address bit 14
Write Enable
Ready/Busy
Supply Voltage
Prog. Voltage
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
LOW
LOW
I
O
LOW
N.C.
A8
I
I
I
I
I
Address bit 17 256KB(2)
Address bit 18 512KB(2)
A13
A14
WE#
Address bit 19
Address bit 20
Address bit 21
Supply Voltage
Prog. Voltage
1MB(2)
2MB(2)
4MB(2)
I
LOW
N.C.
16 RDY/BSY#
O
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
Vcc
Vpp1
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
WP
GND
N.C.
N.C.
I
I
I
I
I
I
I
I
I
I
I
I/O
I/O
I/O
O
Address bit 22 8MB(2,4)
N.C.
N.C.
N.C.
O
O
Voltage Sense 2
N.C.
Extended Bus Cycle Low
I
O
O
I/O
I/O
O
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
Low
(3)
Data bit 1
Data bit 2
Write Potect
Ground
Data bit 9
Data bit 10
Card Detect 2
Ground
HIGH
O
LOW
Notes:
1. CD1# and CD2# are grounded internal to PC Card.
2. Shows density for which specified address bit is MSB. Higher order address bits are
no connects (i.e., 1MB A19 is MSB, A20 - A21 are NC).
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.
4. Address bit 22 is used for the 8MB cards as well as the 6MB Cards.
2
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Mechanical
Type I
Interconnect area
3.0mm MIN
1.6mm ± 0.05
(0.063”)
10.0mm MIN
(0.400”)
1.0mm ± 0.05
(0.039”)
Substrate area
54.0mm ± 0.10
(2.126”)
85.6mm ± 0.20
(3.370”)
1.0mm ± 0.05
(0.039”)
10.0mm MIN
(0.400”)
3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
Type II
1.6mm ± 0.05
0.063”
85.6mm ± 0.20
3.370”
1.0mm ±0.05
0.039’
3.0mm
MIN.
Substrate area
54.0mm ± 0.10
2.126”
1.0mm ±0.05
0.039’
10.0mm MIN
0.400”
Interconnect area
5.0mm ± T1
0.197”
3
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Card Signal Description
Symbol
A0 - A25
Type
INPUT
Name and Function
ADDRESS INPUTS: A0 through A25 enable direct addressing of up
to 64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit. (address pins used are based on
card density,see pinout for highest used address pin)
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and
DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-
bit hosts to access all data on DQ0 - DQ7.
DQ0 - DQ15
CE1#, CE2#
INPUT/OUT
PUT
INPUT
OE#
WE#
INPUT
INPUT
OUTPUT ENABLE: Active low signal enabling read data from the
memory card.
WRITE ENABLE: Active low signal gating write data to the memory
card.
RDY/BSY#
CD1#, CD2#
OUTPUT
OUTPUT
READY/BUSY OUTPUT: Not used for SRAM cards
CARD DETECT 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WP
OUTPUT
N.C.
WRITE PROTECT: Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). When
switch is off signal is pulled low.
PROGRAM/ERASE POWER SUPPLY: Not used for SRAM
cards.
VPP1, VPP2
VCC
GND
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GROUND: for all internal circuitry.
REG#
INPUT
ATTRIBUTE MEMORY SELECT : only used with cards built with
optional attribute memory.
RST
INPUT
RESET: Not used for SRAM cards
WAIT#
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait
states are generated.
BVD1, BVD2
OUTPUT
BATTERY VOLTAGE DETECT: Provides status of Battery
voltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires
extended recharge)
VS1, VS2
OUTPUT
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V, 16 bit card has
been inserted.
RFU
N.C.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven
or left floating
FUNCTIONAL TRUTH TABLE
Common Memory
Attribute Memory
/REG D15-D8 D7-D0
High-Z
READ function
Function Mode
Standby Mode
Byte Access (8 bits)
/CE2 /CE1 A0
/OE /WE
/REG D15-D8
D7-D0
High-Z
H
H
H
L
H
L
L
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z
X
L
L
L
L
High-Z
High-Z Even-Byte
High-Z Odd-Byte
Odd-Byte Even-Byte
Odd-Byte High-Z
High-Z Even-Byte
High-Z Not Valid
Not Valid Even-Byte
Word Access (16 bits)
Odd-Byte Only Access
WRITE function
L
L
H
Not Valid
High-Z
Standby Mode
Byte Access (8 bits)
H
H
H
L
H
L
L
L
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte
Odd-Byte
Even-Byte
X
Even-Byte
X
Word Access (16 bits)
Odd-Byte Only Access
Odd-Byte Even-Byte
Odd-Byte
L
X
4
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Absolute Maximum Ratings (2)
Notes:
(1) During transitions, inputs may undershoot to
-2.0V or overshoot to VCC +2.0V for periods
less than 20ns.
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than those
indicated in the operational sections of this
specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to VSS
VCC supply Voltage relative to VSS
-40°C to +85 °C
0°C to +60 °C
-40°C to +85 °C
-0.5V to VCC+0.5V (1)
-0.5V to +7.0V
DC Characteristics (1)
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Sym
Parameter
Density Notes Min
Typ(3) Max
Units Test Conditions
ICC
VCC Active Current
64KB
128KB
256KB
512KB
1MB
to
1
90
90
90
90
110
180
180
180
180
190
mA
VCC = 5.25V
tcycle = 150ns
8MB
ICCS
ILI
VCC Standby Current
Input Leakage Current
Output Leakage Current
All
2,4
5,6
6
< 0.1
< 1
10
mA
VCC = 5.25V
Control Signals = VCC
VCC = VCCMAX
Vin =VCC or VSS
VCC = VCCMAX
Vout =VCC or VSS
All
All
±20
µA
ILO
±20
0.8
µA
VIL
VIH
Input Low Voltage
Input High Voltage
All
All
6
6
0
V
V
3.85
VCC
+0.5
0.4
VOL
VOH
Output Low Voltage
Output High Voltage
All
All
6
6
V
V
IOL = 3.2mA
IOH = -2.0mA
VCC-
0.4
VCC
Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to
internal pull-up resistors.
Battery Characteristics
SRA11-14
Type I
min 10
SRA01-04
Type I Type II
min 10
Parameter
Battery Life
Density
All
Notes
(1)
Units
years
Conditions
Normal operation, T=25C
256KB
512KB, 1MB
2MB
(2)
-
24
18
12
7
60
45
30
17
17
T=25C
Battery backup time is a
calculated value and is not
32
22
12
12
Battery
Backup Time
months
4MB
6MB
(typical) guaranteed. This should
not be used to schedule
7
battery recharging.
8MB
12
-
-
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
5
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
AC Characteristics
Read Timing Parameters
150ns
Min
SYM
Parameter
Max
Unit
(PCMCIA)
tRC
Read Cycle Time
150
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ta(A)
Address Access Time
150
150
75
ta(CE)
ta(OE)
tsu(A)
Card Enable Access Time
Output Enable Access Time
Address Setup Time
20
0
tsu(CE)
th(A)
Card Enable Setup Time
Address Hold Time
20
20
0
th(CE)
tv(A)
Card Enable Hold Time
Output Hold from Address Change
Output Disable Time from CE#
Output Disable Time from OE#
Output Enable Time from CE#
Output Enable Time from OE#
tdis(CE)
tdis(OE)
tdis(CE)
tdis(CE)
75
75
5
5
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Read Timing Diagram
tc(R)
th(A)
ta(A)
A[25::0], /REG
/CE1, /CE2
tv(A)
ta(CE)
tsu(CE)
NOTE 1
NOTE 1
th(CE)
ta(OE)
tsu(A)
tdis(CE)
/OE
tdis(OE)
ten(OE)
D[15::0]
DATA VALID
Note: Signal may be high or low in this area.
6
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Write Timing Parameters
150ns
Min
SYM
Parameter
Max
Unit
(PCMCIA)
tCW
Write Cycle Time
150
80
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tw(WE)
Write Pulse Width
tsu(A)
Address Setup Time
20
tsu(A-WEH)
tsu(CE-WEH)
tsu(D-WEH)
th(D)
Address Setup Time for WE#
Card Enable Setup Time for WE#
Data Setup Time for WE#
Data Hold Time
100
100
50
20
trec(WE)
tdis(WE)
tdis(OE)
Write Recover Time
20
Output Disable Time from WE#
Output Disable Time from OE#
Output Enable Time from WE#
Output Enable Time from OE#
Output Enable Setup from WE#
Output Enable Hold from WE#
Card Enable Setup Time from OE#
Card Enable Hold Time
75
75
ten(WE)
5
5
tdis(OE)
tsu(OE-WE)
th(OE-WE)
tsu(CE)
10
10
0
th(CE)
20
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Write Timing Diagram
tc(W )
A [2 5 ::0 ], /R E G
tsu (A -W E H )
tre c (W E )
th (C E )
tsu (C E -W E H )
tsu (C E )
/C E 1 , /C E 2
N O T E
1
N O T E
1
/O E
th (O E -W E )
th (D )
tw (W E )
tsu (A )
/W E
tsu (O E -W E )
tsu (D -W E H )
D [1 5 ::0 ](D in )
N O T E
2
D A T A IN P U T
td is (W E )
td is (O E )
te n (O E )
te n (W E )
N O T E
2
D [1 5 ::0 ](D o u t)
Notes:
1. Signal may be high or low in this area.
2. When the data I/O pins are in the output state, no signals shall be applied to the
data pins (D15 - D0) by the host system.
7
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
PRODUCT MARKING
WED8P512SRA0100C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2001 all PCMCIA products will be marked only with the WED prefix.
PART NUMBERING
8 P512SRA0100C15
Card access time
15
25
150ns
250ns
Temperature range
C
I
Commercial 0°C to +70°C
Industrial -40°C to +85°C
Packaging option
00
Standard, type 1
Card family and version
- See Card Family and Version Info. for details (next page)
Card capacity
512
512KB
PC card
P
Standard PCMCIA
R
Ruggedized PCMCIA
Card technology
7
8
FLASH
SRAM
8
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
Ordering Information
8P XXX SRA YY SS T ZZ
where
XXX:
YY:
SS:
256*
512*
001
002
004
256KB
512KB
1MB
2MB
4MB
006
008*
6MB
8MB
*= Capacities available only in SRA01-SRA04
01
02
03
04
no attribute memory, no Write Protect Switch
with attribute memory, no Write Protect Switch
with Write Protect Switch, no attribute memory
with attribute memory, with Write Protect Switch
11
12
13
14
Extended Battery Backup Time, no attribute memory, no Write Protect Switch
Extended Battery Backup Time, with attribute memory, no Write Protect Switch
Extended Battery Backup Time, with Write Protect Switch, no attribute memory
Extended Battery Backup Time, with attribute memory, with Write Protect Switch
00
01
02
03
04
05
WEDC SRAM Logo Type I
Blank Housing,
Blank Housing,
WEDC SRAM Logo, Type II
Blank Housing,
Blank Housing,
Type I
Type I Recessed
(8MB and extended battery backup time)
(8MB and extended battery backup time)
Type II
Type II Recessed (8MB and extended battery backup time)
T:
C
I
Commercial
Industrial
ZZ:
15
150ns
9
February 2002 Rev. 6
PC Card Products
PCMCIA SRAM Memory Card
SRA Series
REVISION HISTORY
Version
-001
Date of revision
23-Dec-98
7-Feb-99
Description
Initial release
-002
-003
-004
-005
page 5: 10 years to: min 10 years
Company/Logo change
Revised capacities and Edited Pinout
Added Page 8, Changed Page Header
Added SRA11-14 to Ordering Info, Added
SRA11-14 to Battery Info
May-99
28-Sep-99
1-Jun-00
6-Feb-02
-006
Changed Page Header
Filename: SRA Dsht Rev 6.ppt
White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel: (508) 366 5151
fax: (508) 836 4850
www.whiteedc.com
10
February 2002 Rev. 6
PC Card Products
相关型号：
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