7P001FEA0200C15 [WEDC]
Flash Card, 1MX8, 150ns, CARD-68;
| 型号： | 7P001FEA0200C15 |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | Flash Card, 1MX8, 150ns, CARD-68 内存集成电路 |
| 文件： | 总6页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PCMCIA Flash Memory Card
FEA Series
Eight Bit Flash Memory Card (Intel based) 512KB, 1, 2, 4 and 8 MEGABYTE
General Description
Features
• Low cost Linear Flash Card
The FEA Econo Flash card series offers a low cost and
high performance eight bit linear Flash solid state storage
solution for code/data storage and embedded applications.
• Single 5 Volt Supply (S5 devices)
or 5V Vcc / 12V Vpp (SA devices)
Packaged in PCMCIA type I or a type I half-card housing,
the FEA card series is based on Intel/Sharp Flash memory
devices: 28F0004S5 (4Mb), 28F0008S5 (8Mb) or
28F016S5 (16Mb) for 5V only applications and
28F008SA (8Mb) for 5V/12V applications. Device codes
are A7h, A6h, AAh, and A2h respectively. Systems
should be able to recognize all codes. The PC Card form
factor offers an industry standard pinout and mechanical
outline, allowing density upgrades without system design
changes.
• Based on Intel/Sharp Flash Components
- very low power in Sleep Mode
• Fast Read Performance
- 100ns or 150ns Maximum Access Time
• x8 Data Interface
• High Performance Random Writes
- 10µs Typical Byte Write Time
• Automated Write and Erase Algorithms
- Intel Command Set
The FEA card series is designed as a simple x8 linear
array of Flash devices. The 512KB density cards are built
with 4 Mb components (5V only), 2MB and 4MB density
options may be built with either 8Mb or 16Mb
components, and the 8MB density cards are built with
• 50µA Typical Power-Down
• 100,000 Erase Cycles per Block
• 64K word symmetrical Block Architecture
• PC Card Standard Type I Form Factor
16Mb components.
All components have uniform
64Kbyte sectors and use identical embedded automated
write and erase algorithms. The 8 bit design provides very
low power operation as only one component is active at a
time. The Intel Flash components provide very low
standby current in Sleep Mode.
Block Diagram
SUPPORTED COMPONENTS (max
4
X):
DEVICE
3
2
1
0
28F008SA
28F004S5
28F008S5
28F016S5
CD1#
-
-
-
-
max 4MB (5V Vcc/12V Vpp) CS3
max 2MB (5V only)
max 4MB (5V only)
DEVICE
DEVICE
DEVICE
ADDRESS BUS A0-A22
A0-20(19/18)
max 8MB (5V only)
CS2
CS1
CS0
CD2#
GND
CS3
CS2
CS1
CS0
CE1#
WAIT#
BVD1
BVD2
CONTROL
LOGIC
Vcc
Vcc
VPP1
VPP2
VS1
NC for S5 devices
WE#
OE#
NC
open
open
D0-D7
VS2
1
August 2000 Rev. 3 - ECO #13123
PC Card Products
PCMCIA Flash Memory Card
FEA Series
Pinout
Pin Signal name I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Active
Pin Signal name I/O
Function
Ground
Active
1
2
3
4
5
6
7
8
9
GND
DQ3
DQ4
DQ5
DQ6
DQ7
CE1#
A10
OE#
A11
A9
35
36
37
38
39
40
41
42
43
44
45
46
GND
CD1#
DQ11
DQ12
DQ13
DQ14
DQ15
CE2#
VS1
I/O
I/O
I/O
I/O
O
I/O
I/O
I/O
I/O
I
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card Enable 2
Voltage Sense 1
Reserved
LOW
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
Data bit 6
Data bit 7
I/O
I
I
I
I
I
I
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
LOW
LOW
I
O
10
11
12
RFU
RFU
A17
Reserved
Address bit 17
A8
I
I
I
I
I
13
14
15
A13
A14
I
I
Address bit 13
Address bit 14
Write Enable
47
48
49
A18
A19
A20
Address bit 18
Address bit 19
Address bit 20
512KB 3)
3)
1MB
3)
WE#
I
LOW
N.C.
2MB
16
17
RDY/BSY#
O
Ready/Busy
Supply Voltage
50
51
A21
Vcc
Address bit 21
Supply Voltage
4MB 3)
Vcc
1)
18
Vpp1
12VProg. Voltage
52
Vpp2
12V Prog. Voltage
N.C.
3)
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
I
I
I
I
I
I
I
I
I
Address bit 16
Address bit 15
Address bit 12
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Address bit 0
Data bit 0
53
54
55
56
57
58
59
60
61
62
63
64
65
66
A22
A23
A24
A25
VS2
I
I
I
I
O
I
Address bit 22
Address bit 23
Address bit 24
Address bit 25
Voltage Sense 2
Card Reset
Extended Bus cycle
Reserved
Attrib Mem Select
Bat. Volt. Detect 2
Bat. Volt. Detect 1
Data bit 8
8MB
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
RST
Wait#
RFU
REG#
BVD2
BVD1
DQ8
DQ9
DQ10
O
I
O
O
I/O
I/O
O
N.C.
I
I
A0
DQ0
DQ1
DQ2
I/O
I/O
I/O
N.C.
N.C.
N.C.
Data bit 1
Data bit 2
Data bit 9
Data bit 10
2)
33
34
WP
GND
O
Write Potect
Ground
67
68
CD2#
GND
O
Card Detect 2
Ground
LOW
Notes:
1. Vpp1 connected only for versions with 28F008SA devices.
2. Connected to GND - no write protection.
3. Shows density for which specified address bit is MSB. Higher order addresses are not connected (i.e. for
4MB card A21 is MSB, A22-A25 are N.C.).
Interconnect area
Mechanical
1.6mm ± 0.05
10.0mm MIN
(0.400”)
3.0mm MIN
(0.063”)
1.0mm ± 0.05
(0.039”)
Substrate area
54.0mm ± 0.10
(2.126”)
85.6mm ± 0.20
(3.370”)
1.0mm ± 0.05
(0.039”)
10.0mm MIN
(0.400”)
3.3mm ± T1 (0.130”)
T1=0.10mm interconnect area
T1=0.20mm substrate area
2
August 2000 Rev. 3 - ECO #13123
PC Card Products
PCMCIA Flash Memory Card
FEA Series
Card Signal Description
Symbol
A0 - A25
Type
INPUT
Name and Function
ADDRESS INPUTS: A0 through A25 enable direct addressing of
up to 64MB of memory on the card. The memory will wrap at the
card density boundary. The system should not try to access memory
beyond the card density. The upper addresses are not connected.
DQ0 – DQ15
INPUT/OUT DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte.
DQ8 – DQ15 are not connected. DQ7 is the MSB.
CE1#, CE2#
OE#
INPUT
INPUT
INPUT
N.C.
CARD ENABLE 1 AND 2: CE1# enables even byte accesses,
CE2# enables odd byte accesses. CE2# is not connected.
OUTPUT ENABLE: Active low signal enabling read data from the
memory card.
WRITE ENABLE: Active low signal gating write data to the
memory card.
READY/BUSY OUTPUT: Indicates status of internally timed erase
or program algorithms. A high output indicates that the card is ready
to accept accesses. This signal is not connected.
CARD DETECT 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WE#
RDY/BSY#
CD1#, CD2#
OUTPUT
OUTPUT
WP
WRITE PROTECT: This signal is pulled low internally. This
signifies write protect = "off " for all cases.
VPP1
PROGRAM/ERASE POWER SUPPLY: Provides programming
voltage 12.0V for lower byte (D0 – D7) memory components. VPP1
is connected only for cards with 28F008SA devices, not connected
for 5V only card.
VPP2
N.C.
PROGRAM/ERASE POWER SUPPLY: Provides programming
voltage 12.0V for upper byte (D8 – D15) memory components.
VPP2 is not connected
VCC
GND
REG#
CARD POWER SUPPLY: 5.0V
GROUND: for all internal circuitry.
ATTRIBUTE MEMORY SELECT: N.C. (only used with cards
built with optional attribute memory).
RESET: Active high signal for placing card in Power-on default
state. Reset can be used as a Power-Down signal for the memory
array.
N.C.
N.C
RST
WAIT#
OUTPUT
OUTPUT
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No
wait states are generated.
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card has been
inserted.
BVD1, BVD2
VS1, VS2
RFU
N.C.
RESERVED FOR FUTURE USE
NO INTERNAL CONNECTION TO CARD: pin may be driven
or left floating
Functional Truth Table
Function Mode
/REG /CE2 /CE1 /OE /WE D15-D8
D7-D0
High-Z
Even-Byte
Even-Byte
Standby Mode
Read Low Byte Access
Write Low Byte Access
High-Z
High-Z
X
X
X
X
X
X
X
H
L
L
X
L
H
X
H
L
3
August 2000 Rev. 3 - ECO #13123
PC Card Products
PCMCIA Flash Memory Card
FEA Series
DC Characteristics (1)
Symbol Parameter
Notes
Typ(3) Max Units Test Conditions
ICCR VCC Read Current
20
35
mA
VCC = 5.25V
tcycle = 125ns
S5 components
SA components
SA components
S5 components
SA components
SA components
S5 components, 2)
SA components, 2)
ICCW VCC Program Current
75
30
30
50
30
30
100
mA
mA
mA
mA
mA
mA
10
10
IPPW VPP Program Current
VPP = VPPH
VCC = 5.25V
ICCE VCC Block Erase Current
10
IPPE VPP Block Erase Current
ICCS VCC Standby Current
10
50
A
µ
100
A
µ
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specified.
2. Control Signals: CE1#, CE2#, OE#, WE#.
3. Typical: VCC = 5V, T = +25°C.
AC Characteristics (1)
VCC = 5V ± 5%, TA = 0°C to + 70°C
100ns
150ns
Min
SYM
tC(R)
Parameter
Min
Max
Max
Unit
ns
Read Cycle Time
100
150
ta(A)
Address Access Time
Card Enable Access Time
Output Enable Access Time
Write Cycle Time
100
100
50
150
150
75
ns
ta(CE)
ta(OE)
tcW
ns
ns
100
60
150
80
ns
tW(WE)
Write Pulse Width
ns
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.
Data Write and Erase Performance (1,3)
VCC = 5V ± 5%, TA = 0°C to + 70°C
SYM
Parameter
Notes
2
Min
Typ(1)
8µs
Max
3ms
Units
sec
Test Conditions
tWHQV1 Word/Byte Program time
tEHQV1
tWHQV2 Block Program Time
tEHQV2
2
0.4
2.1
10
Word Program Mode
Block Erase Time
2
0.6
sec
sec
Full Chip Erase Time
2, 4
38.4
Notes:
1. Typical: Nominal voltages and TA = 25°C.
2. Excludes system overhead.
3. Valid for all speed options.
4. Chip erase time based on 8 Mbit Flash components.
August 2000 Rev. 3 - ECO #13123
4
PC Card Products
PCMCIA Flash Memory Card
FEA Series
PRODUCT MARKING
WED7P008FEA0500C15 C995 9915
EDI
Date code
Lot code / trace number
Part number
Company Name
Note:
Some products are currently marked with our pre-merger company name/acronym (EDI). During our
transition period, some products will also be marked with our new company name/acronym (WED).
Starting October 2000 all PCMCIA products will be marked only with the WED prefix.
PART NUMBERING
7P008FEA0500C15
Card access time
15
25
150ns
250ns
Temperature range
C
I
Commercial 0°C to +70°C
Industrial -40°C to +85°C
Packaging option
00
Standard, type 1
Card family and version
- See Card Family and Version Info. for details (next page)
Card capacity
008
8MB
PC card
P
Standard PCMCIA
R
Ruggedized PCMCIA
Card technology
7
8
FLASH
SRAM
5
August 2000 Rev. 3 - ECO #13123
PC Card Products
PCMCIA Flash Memory Card
FEA Series
Ordering Information
Eight Bit Flash Memory Card
7P XXX FEA YY 00 T ZZ
where
XXX:
512
001
002
004
008
512KB (YY 01 only)
1MB
2MB
4MB
8MB
(YY 02, 03)
(YY 02, 03, 05)
(YY 02, 03, 05)
(YY 05 only)
YY:
01
02
03
05
28F008SA base
28F004S5 base
28F008S5 base
28F016S5 base
T:
C
I
Commercial
Industrial
(1)
M
Military Temp
ZZ:
10
15
100ns
150ns
Revision history:
rev level
rev 0
description
date
initial release
Logo change
Feb 2, 1998
May 27, 1999
May 31, 2000
rev 1
rev 2
added page 5
Page Header Change
rev 3
Corrected errors, pg. 4 August 1, 2000
White Electronic Designs Corporation
One Research Drive, Westborough, MA 01581, USA
tel: (508) 366 5151
fax: (508) 836 4850
www.whiteedc.com
6
August 2000 Rev. 3 - ECO #13123
PC Card Products
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