5962-9690202HMX [WEDC]

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44;
5962-9690202HMX
型号: 5962-9690202HMX
厂家: WHITE ELECTRONIC DESIGNS CORPORATION    WHITE ELECTRONIC DESIGNS CORPORATION
描述:

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44

CD 静态存储器 内存集成电路
文件: 总7页 (文件大小:297K)
中文:  中文翻译
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WMS256K16-XXX  
White Electronic Designs  
256Kx16 MONOLITHIC SRAM, SMD 5962-96902  
PIN CONFIGURATION FOR WMS256K16-XXX  
FEATURES  
Access Times 17, 20, 25, 35ns  
44 CSOJ  
MIL-STD-883 Compliant Devices Available  
Packaging  
44 FlatpacK  
TOP VIEW  
• 44 pin Ceramic SOJ (Package 102)  
• 44 lead Ceramic Flatpack (Package 225)  
• 44 lead Formed Ceramic Flatpack  
Organized as 256Kx16  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
2
3
4
5
6
7
8
A0  
A1  
A2  
A3  
A4  
CS#  
I/O1  
I/O2  
I/O3  
I/O4  
A17  
A16  
A15  
OE#  
UB#  
LB#  
Data Byte Control:  
I/O16  
I/O15  
I/O14  
I/O13  
GND  
• Lower Byte (LB#) = I/O1-8  
• Upper Byte (UB#) = I/O9-16  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
2V Minimum Data Retention for battery back up  
operation (WMS256K16L-XXX Low Power Version  
Only)  
VCC  
GND  
I/O5  
I/O6  
I/O7  
I/O8  
WE#  
A5  
A6  
A7  
A8  
A9  
VCC  
I/O12  
I/O11  
I/O10  
I/O9  
NC  
Commercial, Industrial and Military Temperature  
Range  
5V Power Supply  
A14  
A13  
A12  
A11  
Low Power CMOS  
TTL Compatible Inputs and Outputs  
A10  
PIN DESCRIPTION  
A0-17  
LB#  
UB#  
Address Inputs  
Lower-Byte Control (I/O1-8  
)
Upper-Byte Control (I/O9-16  
)
I/O1-16 Data Input/Output  
CS#  
OE#  
WE#  
VCC  
Chip Select  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
GND  
NC  
No Connection  
August 2004  
Rev. 6  
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
TRUTH TABLE  
Data I/O  
Power  
CS#  
WE#  
OE#  
LB#  
UB#  
Mode  
I/O1-8  
I/O9-16  
H
L
L
X
H
X
X
H
X
X
X
H
L
X
X
H
H
L
Not Select  
Output Disable  
High Z  
High Z  
Standby  
Active  
High Z  
High Z  
Data Out  
High Z  
High Z  
Data Out  
Data Out  
High Z  
L
L
H
L
L
H
L
Read  
Write  
Active  
Active  
L
Data Out  
Data In  
High Z  
L
H
L
X
H
L
Data In  
Data In  
L
Data In  
ABSOLUTE MAXIMUM RATINGS  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
VCC+0.5  
150  
Unit  
°C  
°C  
V
Parameter  
Symbol  
VCC  
VIH  
Min  
4.5  
Max  
5.5  
Unit  
V
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
Supply Voltage  
TSTG  
VG  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
2.2  
VCC + 0.3  
+0.8  
V
VIL  
-0.3  
-55  
V
TJ  
°C  
V
TA  
+125  
°C  
VCC  
-0.5  
7.0  
CAPACITANCE  
TA = +25°C  
Parameter  
Symbol  
CIN  
Condition  
Max Unit  
Input capacitance  
Output capacitance  
VIN = 0V, f = 1.0MHz  
VOUT = 0V, f = 1.0MHz  
20  
20  
pF  
pF  
COUT  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C TA +125°C  
Parameter  
Symbol  
ILI  
ILO  
ICC  
ISB  
Conditions  
Min  
Max  
10  
Units  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
VCC = 5.5, VIN = GND to VCC  
μA  
μA  
mA  
mA  
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5  
IOL = 6mA, VCC = 4.5  
10  
275  
17  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
IOH = -4.0mA, VCC = 4.5  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)  
-55°C TA +125°C  
Parameter  
Symbol  
Conditions  
CS# VCC -0.2V  
VCC = 3V  
Min  
Typ  
Max  
5.5  
Units  
V
Data Retention Supply Voltage  
Data Retention Current  
VDR  
2.0  
1
ICCDR  
1.0  
8.0  
mA  
August 2004  
Rev. 6  
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
AC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C TA +125°C  
-17  
-20  
-25  
-35  
Parameter  
Read Cycle  
Symbol  
Units  
Min  
17  
Max  
17  
Min  
20  
Max  
20  
Min  
25  
Max  
25  
Min  
35  
Max  
35  
Read Cycle Time  
Address Access Time  
Output Hold from Address Change  
Chip Select Access Time  
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
LB#, UB# Access Time  
tRC  
tAA  
tOH  
tACS  
tOE  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0
0
0
0
17  
10  
20  
12  
25  
15  
35  
20  
1
tCLZ  
2
0
5
0
5
0
5
0
1
tOLZ  
1
tCHZ  
9
9
10  
10  
10  
12  
12  
12  
14  
15  
15  
17  
1
tOHZ  
tBA  
tBLZ  
tBHZ  
1
LB#, UB# Enable to Low Z Output  
LB#, UB# Disable to High Z Output  
0
0
0
0
1
9
10  
12  
15  
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C TA +125°C  
Parameter  
Write Cycle  
-17  
-20  
-25  
-35  
Symbol  
Units  
Min  
17  
14  
14  
10  
14  
0
Max  
Min  
20  
17  
17  
12  
17  
0
Max  
Min  
25  
20  
20  
15  
20  
0
Max  
Min  
35  
25  
25  
20  
25  
0
Max  
Write Cycle Time  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
Address Setup Time  
Address Hold Time  
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
tAH  
2
0
2
0
2
0
2
0
1
tOW  
1
tWHZ  
9
10  
10  
15  
tDH  
tBW  
0
14  
0
17  
0
20  
0
25  
LB#, UB# Valid to End of Write  
1. This parameter is guaranteed by design but not tested.  
AC TEST CIRCUIT  
AC TEST CONDITIONS  
Parameter  
Typ  
Unit  
V
Input Pulse Levels  
VIL = 0, VIH = 3.0  
IOL  
Input Rise and Fall  
5
ns  
V
Current Source  
Input and Output Reference Level  
Output Timing Reference Level  
1.5  
1.5  
V
Notes:  
D.U.T.  
VZ  
(Bipolar Supply)  
1.5V  
Vz is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Ceff = 50 pf  
Tester Impedance Z0 = 75 Ω.  
Vz is typically the midpoint of VOH and VOL  
.
IOL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
IOH  
Current Source  
August 2004  
Rev. 6  
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
TIMING WAVEFORM - READ CYCLE  
tRC  
tRC  
ADDRESS  
CS#  
ADDRESS  
DATA I/O  
tAA  
tAA  
tOH  
tCHZ  
tACS  
PREVIOUS DATA VALID  
DATA VALID  
LB#, UB#  
tBHZ  
tBA  
READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH  
)
tBLZ  
tCLZ  
OE#  
tOE  
tOHZ  
tOLZ  
DATA I/O  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 2 (WE# = VIH  
)
WRITE CYCLE - WE# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS#  
tBW  
LB#, UB#  
tAS  
tWP  
WE#  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE# CONTROLLED  
WRITE CYCLE - CS# CONTROLLED  
WRITE CYCLE - LB#, UB# CONTROLLED  
tWC  
tWC  
ADDRESS  
ADDRESS  
tAW  
tAW  
tAH  
tAH  
tAS  
tAS  
tCW  
tCW  
CS#  
LB#, UB#  
WE#  
CS#  
tBW  
tBW  
LB#, UB#  
tWP  
tWP  
WE#  
tDW  
tDH  
tDW  
tDH  
DATA I/O  
DATA I/O  
DATA VALID  
DATA VALID  
WRITE CYCLE 2, CS# CONTROLLED  
WRITE CYCLE 3, LB#, UB# CONTROLLED  
August 2004  
Rev. 6  
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
PACKAGE 102: 44 LEAD, CERAMIC SOJ  
28.70 (1.13) 0.25 (0.010)  
3.ꢀ6 (0.156) MAX  
0.8ꢀ (0.035)  
Radius TYP  
0.2 (0.008)  
0.05 (0.002)  
11.3 (0.446)  
0.2 (0.00ꢀ)  
ꢀ.55 (0.376) 0.25 (0.010)  
1.27 (0.050) 0.25 (0.010)  
1.27 (0.050) TYP  
26.7 (1.050) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK  
28.45 (1.120)  
0.26 (0.010)  
2.60 (0.102)  
MAX  
12.ꢀ5 (0.510)  
0.13 (0.005)  
10.16 (0.400)  
0.51 (0.020)  
0.43 (0.017)  
0.05 (0.002)  
1.27 (0.050) TYP  
0.14 (0.006)  
0.05 (0.002)  
26.67 (1.050) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
August 2004  
Rev. 6  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
PACKAGE 211: 44 LEAD FORMED, CERAMIC FLAT PACK  
3.81 (0.150)  
PIN 1  
28.45 (1.120)  
0.26 (0.010)  
MAX  
IDENTIFIER  
1.52 (0.060) TYP  
12.ꢀ5 (0.510)  
0.13 (0.005)  
16.76 (0.660)  
0.13 (0.005)  
0.43 (0.017)  
0.05 (0.002)  
1.27 (0.050) TYP  
0.14 (0.006)  
0.05 (0.002)  
+
+
1.ꢀ0 (0.075) TYP  
26.67 (1.050) TYP  
0.46 (0.030) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
ORDERING INFORMATION  
W M S 256K16 X - XXX X X X  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
DEVICE GRADE:  
M= Military Screened  
I = Industrial  
-55°C to +125°C  
-40°C to +85°C  
0°C to +70°C  
C = Commercial  
PACKAGE:  
DL = 44 Lead Ceramic SOJ (Package 102)  
FL = 44 Lead Ceramic Flatpack (Package 225)  
FG = 44 Lead Formed Ceramic Flatpack  
ACCESS TIME (ns)  
IMPROVEMENT MARK:  
Blank = Standard Power  
L = Low Power Data Retention  
ORGANIZATION, 256K x 16  
SRAM  
MONOLITHIC  
WHITE ELECTRONIC DESIGNS CORP.  
August 2004  
Rev. 6  
6
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS256K16-XXX  
White Electronic Designs  
DEVICE TYPE  
SPEED  
PACKAGE  
SMD NO.  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
35ns  
25ns  
20ns  
17ns  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
5962-96902 01HMX  
5962-96902 02HMX  
5962-96902 03HMX  
5962-96902 04HMX  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
35ns  
25ns  
20ns  
17ns  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
5962-96902 01HNX  
5962-96902 02HNX  
5962-96902 03HNX  
5962-96902 04HNX  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
35ns  
25ns  
20ns  
17ns  
44 lead Formed Flatpack (FG)  
44 lead Formed Flatpack (FG)  
44 lead Formed Flatpack (FG)  
44 lead Formed Flatpack (FG)  
5962-96902 01HTX  
5962-96902 02HTX  
5962-96902 03HTX  
5962-96902 04HTX  
August 2004  
Rev. 6  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  

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