5962-9559504HAX [WEDC]
SRAM Module, 128KX32, 45ns, CMOS, CQFP68, 22.40 MM, 5.08 MM HEIGHT, CERAMIC, QFP-68;
| 型号： | 5962-9559504HAX |
| 厂家： | 
WHITE ELECTRONIC DESIGNS CORPORATION |
| 描述： | SRAM Module, 128KX32, 45ns, CMOS, CQFP68, 22.40 MM, 5.08 MM HEIGHT, CERAMIC, QFP-68 静态存储器 内存集成电路 |
| 文件： | 总10页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WS128K32-XXX
128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595
n
Commercial, Industrial and Military Temperature
Ranges
FEATURES
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n
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Access Times of 15, 17, 20, 25, 35, 45, 55ns
MIL-STD-883 Compliant Devices Available
Packaging
n
n
n
n
5 Volt Power Supply
Low Power CMOS
TTL Compatible Inputs and Outputs
66 pin, PGA Type, 1ꢀ075" square, Hermetic Ce
ramic HIP (Package 400)
68 lead, 40mm CQFP (G4T)1, 3ꢀ56mm (0ꢀ140")
(Package 502)
Built in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation
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Weight:
WS128K32-XG1UX1 - 5 grams typical
WS128K32-XG1TX - 5 grams typical
WS128K32-XG2UX - 8 grams typical
WS128K32-XG2LX - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX1 - 20 grams typical
68 lead, 22ꢀ4mm CQFP (G2U), 3ꢀ56mm (0ꢀ140"),
(Package 510)
68 lead, 22ꢀ4mm (0ꢀ880") square, CQFP (G2L),
5ꢀ08mm (0ꢀ200") high, (Package 528)ꢀ
68 lead, 23ꢀ9mm Low Profile CQFP (G1U)1,
3ꢀ57mm (0ꢀ140"), (Package 519)
68 lead, 23ꢀ9mm Low Profile CQFP (G1T), 4ꢀ06
mm (0ꢀ160"), (Package 524)
Organized as 128Kx32; User Configurable as
256Kx16 or 512Kx8
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All devices are upgradeable to 512Kx32
Note 1: Package Not Recommended For New Design
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FIGꢀ 1 PIN CONFIGURATION FOR WS128K32N-XH1X
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE1-4 Write Enables
CS1-4
OE
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
May 2003 Rev. 12
1
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS128K32-XXX
PIN CONFIGURATION FOR WS128K32-XG4TX1
TOP VIEW
FIGꢀ 2
PIN DESCRIPTION
I/O0-31
A0-16
WE
DataInputs/Outputs
AddressInputs
Write Enables
Chip Selects
CS1-4
OE
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
FIGꢀ 3
PIN CONFIGURATION FOR WS128K32-XG2UX, WS128K32-XG2LX, WS128K32-XG1TX AND
WS128K32-XG1UX1
PIN DESCRIPTION
TOP VIEW
I/O0-31
DataInputs/Outputs
AddressInputs
Write Enables
Chip Selects
A0-16
WE1-4
CS1-4
OE
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
BLOCK DIAGRAM
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
2
WS128K32-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
H
L
X
L
X
H
L
Standby
Read
High Z
Data Out
Data In
High Z
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TA
TSTG
VG
-55
-65
-0.5
+125
+150
Vcc+0.5
150
°C
°C
V
L
X
H
Write
L
H
Out Disable
TJ
°C
V
CAPACITANCE
VCC
-0.5
7.0
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
OE capacitance
COE
CWE
V
V
IN = 0V, f = 1.0 MHz 50
pF
pF
Supply Voltage
VCC
VIH
VIL
4.5
2.2
5.5
VCC + 0.3
+0.8
V
V
WE1-4 capacitance
HIP (PGA) H1
CQFPG4T
CQFPG2U/G2L
CQFPG1U/G1T
IN = 0V, f = 1.0 MHz
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
20
50
20
20
-0.3
-55
V
TA
+125
°C
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0V, f = 1.0 MHz 20
pF
pF
pF
DataI/Ocapacitance
V
I/O = 0V, f = 1.0 MHz 20
IN = 0V, f = 1.0 MHz 50
Addressinputcapacitance
V
This parameter is guaranteed by design but not testedꢀ
DC CHARACTERISTICS
(VCC= 5#0V, GND = 0V, TA = -55°C TO +125°C)
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
ILO
ICC
ISB
VCC =5.5, VIN =GNDtoVCC
10
10
10
10
10
10
10
10
µA
CS=VIH, OE=VIH,VOUT =GNDtoVCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS= VIH, OE = VIH, f=5MHz, Vcc=5.5
IOL = 8mA, VCC = 4.5
µA
mA
mA
V
600
80
600
80
600
80
600
60
OutputLowVoltage
OutputHighVoltage
VOL
VOH
0.4
0.4
0.4
0.4
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
V
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
ILO
ICC
ISB
VCC =5.5, VIN =GNDtoVCC
10
10
10
µA
µA
mA
mA
V
CS=VIH, OE=VIH,VOUT =GNDtoVCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS=VIH, OE = VIH, f=5MHz, Vcc=5.5
IOL = 2.1mA, VCC = 4.5
10
600
60
10
600
60
10
600
60
OutputLowVoltage
OutputHighVoltage
VOL
VOH
0.4
0.4
0.4
IOH = -1.0mA, VCC = 4.5
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0ꢀ3V, VIL = 0ꢀ3V
DATA RETENTION CHARACTERISTICS (FOR WS128K32L-XXX ONLY)
(TA = -55°C TO +125°C), (TA = -40°C TO +85°C)
DataRetentionVoltage
Data Retention Quiescent Current
ChipDisabletoDataRetentionTime(1)
VCC
ICCDR
TCDR
VCC = 2.0V
CS ³ VCC -0.2V
VIN³VCC -0.2V
2
-
0
-
1
-
-
2
-
V
mA
ns
OperationRecoveryTime(1)
TR
orVIN - 0.2V
TRC
-
ns
NOTE: Parameter guaranteed, but not testedꢀ
3
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS128K32-XXX
AC CHARACTERISTICS
(VCC = 5ꢀ0V, GND = 0V, TA = -55°C TO +125°C)
Read Cycle Time
tRC
tAA
15
0
17
0
20
0
25
0
35
0
45
0
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
15
17
20
25
35
45
55
OutputHoldfromAddressChange
Chip Select Access Time
tOH
tACS
tOE
15
10
17
10
20
12
25
15
35
20
45
25
55
30
OutputEnabletoOutputValid
ChipSelecttoOutputinLowZ
OutputEnabletoOutputinLowZ
ChipDisabletoOutputinHighZ
OutputDisabletoOutputinHighZ
tCLZ1
tOLZ1
tCHZ1
tOHZ1
3
0
3
0
3
0
3
0
3
0
3
0
3
0
12
12
12
12
12
12
12
12
20
20
20
20
20
20
1ꢀ This parameter is guaranteed by design but not testedꢀ
AC CHARACTERISTICS
(VCC = 5ꢀ0V, GND = 0V, TA = -55°C TO +125°C)
WS128K32-XXX /
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
15
14
14
10
14
0
17
14
15
10
14
0
20
15
15
12
15
0
25
20
20
15
20
0
35
45
30
30
25
30
0
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
EDI8C32128C
ChipSelecttoEndofWrite
AddressValidtoEndofWrite
DataValidtoEndofWrite
WritePulseWidth
25
25
20
25
0
45
45
25
45
0
AddressSetupTime
tAS
AddressHoldTime
tAH
0
0
0
0
0
0
0
OutputActivefromEndofWrite
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
3
3
3
3
4
4
4
10
10
12
15
20
25
25
0
0
0
0
0
0
0
1ꢀ This parameter is guaranteed by design but not testedꢀ
AC TEST CONDITIONS
FIGꢀ 4 AC TEST CIRCUIT
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
V
InputandOutputReferenceLevel
Output Timing Reference Level
1.5
1.5
V
Notes:
VZ is programmable from -2V to +7Vꢀ
IOL & IOH programmable from 0 to 16mAꢀ
Tester Impedance Z0 = 75 Wꢀ
VZ is typically the midpoint of VOH and VOLꢀ
IOL & IOH are adjusted to simulate a typical resistive load circuitꢀ
ATE tester includes jig capacitanceꢀ
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
4
WS128K32-XXX
FIGꢀ 5
FIGꢀ 6
FIGꢀ 7
TIMING WAVEFORM - READ CYCLE
WRITE CYCLE - WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
WS32K32-XHX
5
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS128K32-XXX
66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
PACKAGE 400:
ALL LINEAR DIMENSIONSARE MILLIMETERS AND PARENTHETICALLY IN INCHES
68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1
PACKAGE 502:
ALL LINEAR DIMENSIONSARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
6
WS128K32-XXX
PACKAGE 510:
68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2U)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)1
PACKAGE 519:
00/80
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Designs
7
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS128K32-XXX
PACKAGE524: 68LEAD,CERAMICQUADFLATPACK,LOWPROFILECQFP(G1T)
25.27 (0.995) ± ±0.13 (0.005) SQ
4.06 (0.160) MAX
23.88 (0.940) ± ±0.25 (0.010) SQ
0.25 (0.010) MAX
0.83 (0.033)
± ±0.32 (0.013)
00/80
0.84 (0.033) REF
DETAIL A
SEE DETAIL "A"
1.27 (0.050)
0.38 (0.015) ± ±0.05 (0.002)
20.3 (0.800) REF
ALL LINEAR DIMENSIONS ARE MILLIMETERSAND PARENTHETICALLY IN INCHES
PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
25.15 (0.990) – 0.25 (0.010) MAX
5.10 (0.200) MAX
22.36 (0.880) – 0.25 (0.010) MAX
0.25 (0.010) – 0.10 (0.002)
0.23 (0.009) REF
24.0 (0.946)
– 0.25 (0.010)
R 0.127
(0.005)
1.37 (0.054) MIN
0.004
2
O / 9O
0.89 (0.035)
– 1.14 (0.045)
1.27 (0.050) TYP
0.38 (0.015) – 0.05 (0.002)
20.31 (0.800) REF
0.940" TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
8
WS128K32-XXX
ORDERING
INFORMATION
Blank=Goldplatedleads
A = Solderdipleads
Q= MIL-STD-883Compliant
M= MilitaryScreened
-55°Cto+125°C
I = Industrial -40°Cto+85°C
C = Commercial
0°Cto+70°C
H1= 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)
G2U = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 510)
G2L = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)
G1U1 =23.9mmCeramicQuadFlatPack, LowProfileCQFP(Package519)
G1T=23.9mmCeramicQuadFlatPack,LowProfileCQFP(Package524)
G4T1 = 40 mm Low Profile CQFP (Package 502)
N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades
L = Low Power
User configurable as 256Kx16 or 512Kx8
* Low Power Data Retention only available in G2T Package Type
Note 1: Package Not Recommended For New Designs
9
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
WS128K32-XXX
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-93187 05H4X
5962-93187 06H4X
5962-93187 07H4X
5962-93187 08H4X
5962-93187 09H4X
5962-93187 10H4X
5962-9318711H4X
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-9559505HYX1
5962-9559506HYX1
5962-9559507HYX1
5962-9559508HYX1
5962-9559509HYX1
5962-9559510HYX1
5962-9559511HYX1
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-95595 05HMX
5962-95595 06HMX
5962-95595 07HMX
5962-95595 08HMX
5962-95595 09HMX
5962-95595 10HMX
5962-95595 11HMX
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J(G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
68 lead CQFP/J (G1U)1
5962-95595 05H9X
5962-95595 06H9X
5962-95595 07H9X
5962-95595 08H9X
5962-95595 09H9X
5962-95595 10H9X
5962-95595 11H9X
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
68 lead CQFP/J (G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
68 lead CQFP/J(G2L)
5962-95595 05HAX
5962-95595 04HAX
5962-95595 03HAX
5962-95595 02HAX
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation (602) 437-1520 wwwꢀwhiteedcꢀcom
10
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MICROSEMI
5962-9559505H9X
SRAM Module, 128KX32, 55ns, CMOS, CQFP68, 23.90 MM, 3.57 MM HEIGHT, CERAMIC, QFP-68
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