VG26S18165CJ-6 [VML]

1,048,576 x 16 - Bit CMOS Dynamic RAM; 1,048,576 ×16 - 位CMOS动态RAM
VG26S18165CJ-6
元器件型号: VG26S18165CJ-6
生产厂家: VANGUARD INTERNATIONAL SEMICONDUCTOR    VANGUARD INTERNATIONAL SEMICONDUCTOR
描述和应用:

1,048,576 x 16 - Bit CMOS Dynamic RAM
1,048,576 ×16 - 位CMOS动态RAM

PDF文件: 总27页 (文件大小:232K)
下载文档:  下载PDF数据表文档文件
型号参数:VG26S18165CJ-6参数

VG26V16405DJ-5

x4 EDO Page Mode DRAM

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10 ETC

VG26V16405DJ-6

x4 EDO Page Mode DRAM

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5 ETC

VG26V16405DT-5

x4 EDO Page Mode DRAM

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3 ETC

VG26V16405DT-6

x4 EDO Page Mode DRAM

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3 ETC

VG26V16405EJ-5

x4 EDO Page Mode DRAM

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3 ETC

VG26V16405EJ-6

x4 EDO Page Mode DRAM

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6 ETC

VG26V16405ET-5

x4 EDO Page Mode DRAM

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2 ETC

VG26V16405ET-6

x4 EDO Page Mode DRAM

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2 ETC

VG26V17400DJ-5

x4 Fast Page Mode DRAM

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7 ETC

VG26V17400DJ-6

DRAM|FAST PAGE|4MX4|CMOS|SOJ|26PIN|PLASTIC

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8 ETC

VG26V17400DT-5

x4 Fast Page Mode DRAM

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2 ETC

VG26V17400DT-6

x4 Fast Page Mode DRAM

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4 ETC

VG26V17400EJ-5

4,194,304 x 4 - Bit CMOS Dynamic RAM

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24 VML

VG26V17400EJ-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

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36 VML

VG26V17400FJ-5

4,194,304 x 4 - Bit CMOS Dynamic RAM

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19 VML