VSC7969WD-1A [VITESSE]
Telecom Circuit, 1-Func, TO-46, 4 PIN;
| 型号： | VSC7969WD-1A |
| 厂家： | 
VITESSE SEMICONDUCTOR CORPORATION |
| 描述： | Telecom Circuit, 1-Func, TO-46, 4 PIN 电信 电信集成电路 |
| 文件： | 总12页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Product Information
Subject to Change
VSC7969
Data Sheet
3.125Gb/s Integrated Transimpedance and Limiting Amplifier with Signal Detect
FEATURES
APPLICATIONS
● Integrated TIA and Limiting Amplifier
● Low Power Consumption for SFF Applications
● TO Package-Compatible Layout
● 2.488Gb/s, 3.125Gb/s SONET OC-48/SDH STM-16
● 2.125Gb/s Fibre Channel
● 2.5Gb/s or 3.125Gb/s Ethernet Applications with
● On-Chip Signal Detect
8B/10B Overhead
● On-Chip Linear Photocurrent Monitor
● Single 3.3V Supply
● SFF Transceivers
● 5V Supply Operation via Wirebond Option
● Compatible with PIN or Avalanche Detectors
● Packages: Bare Die and TO-46 (with photodetector)
GENERAL DESCRIPTION
The VSC7969 is a 3.125Gb/s transimpedance amplifier IC with a built-in limiting amplifier, a signal detect feature
and a photocurrent monitor. The VSC7969 does not require any external electrical components in the construction of
a high performance optical receiver such as for SONET/SDH applications. The analog output is a differential signal
with a minimum amplitude of 200mVp-p (single-ended). The VSC7969 operates with a single power supply with a
maximum power dissipation of 300mW. A PIN photodiode or Avalanche Photodetector (APD) can be connected and
separately biased to provide optimal performance.
The VSC7969 provides filtered bias for MSM and PIN photodetectors; applications using an APD must supply bias
separately. The VSC7969 also provides a photocurrent monitor whose output is linearly proportional to the input
photocurrent.
The VSC7969 can operate from a single +3.3V or +5V supply. The VSC7969 is offered in die form and a fully tested
TO-46 outline packaged receiver with a photodetector.
VSC7969 Block Diagram
Dual power supply pins are
provided for +5V or +3.3V
VCCS
500Ω
operation. Only one power
supply pin should be connected.
Filter
+3.3V
+5V
Regulator
VCCD
GND
+3.3V
10pF
Outputs need to
be AC-coupled
50Ω
50Ω
VOUTP
VOUTN
In
0.1µF
0.1µF
Signal
Detect
SD_OUT
SD_ADJ
IMON
Monitor
VSC7969
G52355, Rev 2.3
11/22/02
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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VSC7969
Data Sheet
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SPECIFICATIONS
All specifications tested at T = +25°C unless otherwise noted.
A
Table 1. AC Characteristics for Bare Die (-W)
Symbol
Parameter
Min
Typ
Max
Units
Condition
∆I
Input photocurrent swing
2.2
mA
Peak-to-peak AC current
amplitude
PH
I
Average photocurrent sensitivity
Peak input photocurrent sensitivity
4
8
µA
µA
–23dBm average optical
power with a detector
responsitivity of 0.8A/W
PHS_AVG
I
–23dBm average optical
power with a detector
responsitivity of 0.8A/W
PHS_PEAK
∆V
∆V
Single-ended output voltage amplitude
Differential output voltage amplitude
180
360
220
440
300
600
mV
mV
Single-ended peak-to-peak
OUT_SE
measurement. I = >20µA.
IN
Differential peak-to-peak
measurement.
OUT_DIFF
I
= >20µA.
IN
t , t
Rise and fall times
50
100
40
ps
At 2.2mAp-p input photo-
current swing. 20% to 80%
R
F
(1)
Z
Transimpedance gain
20
27
1
kΩ
Differential measurement
T
(1)
∆Z
Ripple in passband transimpedance
dB
Modulation frequency
T
between F and BW
L
BW
Upper –3dB bandwidth
2.2
2.5
3.0
GHz
kHz
Referenced to 10MHz, C
= 0.6pF.
PD
F
Lower –3dB cutoff frequency
100
Referenced to 10MHz, C
= 0.6pF with no external
components.
L
PD
Z
Output resistance
50
500
0.6
Ω
Single-ended
O
I
Input-referred rms noise current
Photodetector capacitance
nA
pF
30kHz to 2.5GHz
NOISE
C
0.4
1
0.8
4
Bias voltage on detector at
2.0V.
PD
SD
Signal detect hysterisis
2.5
dB
Electrical measurement on
SD pin.
H
SD
SD
SD
SD
Signal detect assertion level
Signal detect deassertion level
Signal detect HIGH logic level
Signal detect LOW logic level
6
µA
µA
V
A
1
D
V
-0.3
HIGH
LOW
CCS
0.5
0.8
0.8
V
MON
Slope of linear analog photocurrent
monitor vs. input optical power
µA/µW IMON tied to V with 0Ω to
CC
2kΩ resistor. Detector
responsitivity is 0.8A/W.
DCD
Duty cycle distortion
-5
5
+5
200
15
%
IMON
IMON
Photocurrent monitor linearity range
Photocurrent monitor offset
µA
µA
RANGE
0
OFFSET
(2)
R
D
Random jitter
28
28
ps
ps
Peak-to-peak
Peak-to-peak
J
J
(3)
Deterministic jitter
1. The transimpedance gain is defined as ZT = (∆VOUT_DIFF) / ∆IPH
.
2. Using 1111100000 pattern at 2.5Gb/s to measure the standard deviation at the edge of the pattern, multiply the standard deviation by
14 to achieve the total random jitter.
3. +K28.5 - K28.5 (00111110101100000101).
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Data Sheet
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Table 2. AC Characteristics for TO-46 Packages (WA-1A, WD-1A)
Symbol
Parameter
Min
Typ
Max
Unit
Condition
(1)
OL
Input optical power overload
2.3
dBm
I
Input-referred rms noise current
500
nArms 1Hz to 2.5GHz, 0.6pF photo-
diode capacitance.
NOISE
(2)
OMA
Optical modulation amplitude
8.8
8
µWp-p
(2)
I
Peak input photocurrent sensitivity
µA
–23dBm average optical
power with a detector respon-
sitivity of 0.95A/W.
PHS_PEAK
(2)
S
Average optical power at sensitivity
-23
dBm
V
∆V
Single-ended output voltage amplitude
Differential output voltage amplitude
Rise and fall times
180
360
220
300
600
100
25.6
Single-ended peak-to-peak
OUT_SE
measurement. I = >40µAp-p.
IN
∆V
440
50
mV
ps
Differential peak-to-peak mea-
OUT_DIFF
surement. I = >40µAp-p.
IN
t , t
At 2.2mAp-p input photo cur-
rent. 20% to 80%.
R
F
(1)
R
Differential responsitivity
12.8
19.2
1
mV/µW Peak-to-peak
D
(3)
∆Z
Ripple in passband transimpedance
dB
Modulation frequency between
T
F and BW.
L
BW
Upper –3dB bandwidth
1.2
GHz
kHz
Referenced to 50MHz, C
0.6pF.
=
=
PD
F
Lower –3dB cutoff frequency
30
53
Referenced to 10MHz, C
0.6pF, 0.1µF AC-coupling
capacitor.
L
PD
Z
Output resistance
Duty cycle
50
50
28
28
Ω
%
ps
ps
Single-ended
O
DC
47
(4, 6)
R
D
Random jitter
Peak-to-peak, I = >30µAp-p.
IN
J
J
(5, 6)
Deterministic jitter
Peak-to-peak I = >30µAp-p.
IN
1. Value calculated using photodiode responsitivity = 0.95A/W, extinction ratio = 10dB.
2. Value calculated from INOISE, BER = 1E -12, photodiode responsitivity = 0.95A/W, extinction ratio = 10dB.
3. The differential transimpedance gain is defined as ZT _DIFF = (∆VOUT_DIFFp-p) / IINp-p, where VOUT_DIFF is the differential peak-to-peak
output voltage and IIN is the peak-to-peak input current.
4. Using 1111100000 pattern at 2.5Gb/s to measure the standard deviation at the edge of the pattern, multiply the standard deviation by
14 to achieve the total random jitter.
5. +K28.5 - K28.5 (00111110101100000101).
6. Electrical measurement.
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Data Sheet
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.
Table 3. DC Characteristics
Symbol
Parameter
Min
3.0
4.5
Typ
3.3
5.0
65
Max
3.6
5.5
75
Units Condition
V
V
Power supply voltage for 3.3V operation
V
V
CCS
CCD
(1)
Power supply voltage for 5V operation
I
Power supply current
mA
V
3.3V
CC
V
Common-mode voltage on output pins
(VOUTP and VOUTN)
V
–
At 50Ω load
OUT_CM
CCS
0.125
V
Internal DC bias voltage on detector anode
contact
0.8
0.9
1.0
V
V
ANODE
(1)
V
Internal DC bias voltage on detector cathode
V
–
V
Reversed biased
detector with no current
requirement.
CATHODE
CAT_EXT
CCS
0.15
CCS
(1)
contact
V
External DC bias voltage permissable on
3.3
60
10
V
V
(1)
detector cathode contact
V
External DC bias voltage for use with Ava-
APD
(1)
lanche Photodetector
1. Not applicable to TO-46 packages (WA-1A, WD-1A).
Table 4. Recommended Operating Conditions
Symbol
Parameter
Min
Typ
+3.3
+5.0
Max
Unit
V
Condition
V
V
T
Power supply voltage for 3.3V operation
Power supply voltage for 5V operation
+3.135
+3.135
0
+5.5
+5.5
+85
CC_3.3
CC_5
V
(1)
Operating temperature range
°C
1. Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 5. Absolute Maximum Ratings
Symbol Parameter
Min
–0.5
–0.5
–40
–40
Max
3.6
Unit
V
Condition
V
V
Power supply voltage
Power supply voltage
Junction temperature
Storage temperature
CCS
CCD
J
5.5
V
T
T
+125
+125
°C
°C
S
Stresses listed under Absolute Maximum Ratings may be applied to devices one at a time without causing permanent damage. Functionality at or above the values
listed is not implied. Exposure to these values for extended periods may affect device reliability.
ELECTROSTATIC DISCHARGE
This device can be damaged by ESD. Vitesse recommends that all integrated circuits
be handled with appropriate precautions. Failure to observe proper handling and
installation procedures may adversely affect reliability of the device.
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Data Sheet
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TYPICAL OPERATING CHARACTERISTICS
T
= +25°C and V = +3.3V unless otherwise noted.
A
CC
Electrical Eye Diagram
Electrical Eye Diagram
31
31
Input = 8µAp-p, f = 3.125Gb/s, PRBS 2 -1
Input = 100µAp-p, f = 3.125Gb/s, PRBS 2 -1
I
Characteristic
MON
Bit Error Rate vs. Input Level
0µA to 200µA Input
I
MON CHARACTERISTIC
0µA to 200µA Input
BIT ERROR RATE vs INPUT LEVEL
1.00E-07
250
200
150
100
50
1.00E-08
1.00E-09
1.00E-10
1.00E-11
1.00E-12
1.00E-13
0
6.0
6.5
7.0
7.5
8.0
8.5
0
50
100
150
200
IN (IPD) (µAp-p)
IN (DC Current) (µA)
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VSC7969
Data Sheet
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FUNCTIONAL DESCRIPTION
The VSC7969 data path consists of several stages: transimpedance input stage, limiting amplifier, and output driver.
The transimpedance amplifier accepts current from a photodetector connected to the input pad IN and converts the
input current to a differential output voltage. The signal then travels to the second stage limiting amplifier which
provides DC restoration, eliminating the DC component of the input signal. The linear photocurrent monitor and
signal detect function is also provided by this stage. The final stage consists of an output driver with a differential pair
connected to VCC via 50Ω internal pull-up resistors. The overall effective differential transimpedance of the
VSC7969 is typically 27kΩ. The limited output single-ended voltage swing is typically 250mVp-p.
Power Supply
The VSC7969 is supplied by a single supply voltage. For +3.3V operation, the supply voltage should be applied to
only VCCS and for +5V operation, the supply voltage should be applied to only VCCD. Power supply decoupling
capacitors are recommended for optimal performance. A power supply filter should be used to minimize supply
noise. See Figure 1.
10µH
0.1µF
0.01µF
Figure 1. Power Supply Decoupling Scheme
Data Outputs
The outputs of the VSC7969 need to be AC-coupled. The capacitor will determine the low frequency cutoff for the
system, which is directly related to the receiver’s deterministic jitter. For ATM/SONET, or other applications using
PRBS NRZ data, select a capacitor of at least 0.1µF or greater, which provides less than 32kHz low frequency cutoff.
For Fibre Channel, Gigabit Ethernet, or other applications requiring 8B/10B data coding, select a capacitor of at least
0.01µF or greater, which provides less than 320kHz low frequency cutoff.
The outputs can be used single-ended or differential. For best performance, differential operation is recommended. If
single-ended operation is necessary, the unused output should be AC-coupled and terminated with an impedance
equal to the load on the pin in use.
Signal Detect
The signal detect feature of the VSC7969 provides a CMOS level output corresponding to the input current level to
the transimpedance amplifier.
Table 6. Signal Detect Function
Parameter
Assert
Min
Typ
Max
Units
µA
9
3
4
Deassert
Hysteresis
1
1
2.2
2.5
µA
dB
Photodetector Current Monitor
The IMON pin provides a linear measurement of the average input current from the photodetector to the
transimpedance amplifier. For example, if 20µA is the average input current to the transimpedance amplifier, the
current through the IMON pin will be 20µA (see the typical operating curve IMON Characteristic, 0µA to 200µA). To
use this feature, connect the IMON pin to VCC using a resistor less than 2kΩ. If this feature is not used, the IMON pin
can be left unconnected.
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Data Sheet
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BARE DIE AND PACKAGE INFORMATION
1457µm (57.4mil)
Pad 6
VOUTN
Pad 7
SD_OUT
Pad 8
GND
Pad 9
VOUTN
Pad 10
GND
Pad 11
VOUTP
Pad 12
GND
Pad 13
IMON
Pad 14
VOUTP
Pad 5
SD_ADJ
Pad 15
GND
Pad 4
SD_TP
Pad 16
CSDN
1157µm
(45.6mil)
Pad 3
GND
Pad 17
CSDP
VSC7969
Pad 2
BG_VREF
Pad 18
GND
Pad 1
GND
Pad 19
GND
Pad 26
VCCD
Pad 25
VCCS
Pad 24
GND
Pad 23
IN
Pad 22
FILTER
Pad 21
GND
Pad 20
GND
Die Size Including Scribe: 1157µm x 1457µm (45.6mil x 57.4mil)
Die Thickness: 279µm (11.0mil)
157µm
(6.2mil)
Pad Size: 100µm x 100µm (3.9mil x 3.9mil)
Pad Passivation Opening: 86µm x 86µm (3.4mil x 3.4mil)
Circuit Size: 1000µm x 1300µm (39.4mil x 51.2mil)
Scribe Size: 157µm (6.2mil)
Figure 2. Pad Diagram for Bare Die (-W)
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Data Sheet
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Table 7. Pad Coordinates for Bare Die (-W)
Coordinates (µm)
Pad
Signal
GND
Number
X
Y
Description
1
130
130
130
130
130
137
280
405
530
655
780
905
1030
1173
1180
1180
1180
1180
1180
1030
905
780
530
405
280
137
250
375
500
625
750
875
875
875
875
875
875
875
875
875
750
625
500
375
250
125
125
125
125
125
125
125
Negative power supply rail (typically 0V)
BG_VREF
GND
2
Band Gap voltage reference 1.24V for testpoint, no connect
Negative power supply rail (typically 0V)
3
SD_TP
SD_ADJ
VOUTN
SD_OUT
GND
4
Signal Detect test point, DO NOT CONNECT.
Not used. Leave open in application.
5
6
Complementary logic output (logic LOW when photocurrent is HIGH)
7
Signal detect output (logic HIGH when photocurrent exceeds SD )
A
8
Negative power supply rail (typically 0V)
VOUTN
GND
9
Complementary logic output (logic LOW when photocurrent is HIGH)
Negative power supply rail (typically 0V)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
VOUTP
GND
Positive logic output (logic HIGH when photocurrent is HIGH)
Negative power supply rail (typically 0V)
IMON
VOUTP
GMD
Photocurrent Monitor
Positive logic output (logic HIGH when photocurrent is HIGH)
Negative power supply rail (typically 0V)
CSDN
CSDP
GND
Test point for Signal Detect capacitor. Do not connect.
Test point for Signal Detect capacitor. Do not connect.
Negative power supply rail (typically 0V)
GND
Negative power supply rail (typically 0V)
GND
Negative power supply rail (typically 0V)
GND
Negative power supply rail (typically 0V)
FILTER
IN
Photodetector cathode connection (filtered V
Photodetector anode connection
)
CC
GND
Negative power supply rail (typically 0V)
Positive power supply rail for 3.3V operation
Positive power supply rail for 5V operation
VCCS
VCCD
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Data Sheet
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VCC
VOUTN
VOUTP
GND
BottomView
Figure 3. Pin Diagram for TO-46 (WA-1A, WD-1A)
Table 8. Pin Identifications for TO-46 (WA-1A, WD-1A)
Signal
VOUTP
VOUTN
VCC
I/O
O
Description
Data output, true (with reference to incident light)
Data output, complement (inverting, with reference to incident light)
Power supply
O
Pwr
Pwr
GND
Ground (package case)
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Data Sheet
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Reference Isometric
Figure 4. Package Drawing for TO-46 Flat Window (WA-1A)
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Data Sheet
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Reference Isometric
Figure 5. Package Drawing for TO-46 Balls Lens, 13mm Lead (WD-1A)
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Data Sheet
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ORDERING INFORMATION
VSC7969 3.125Gb/s Integrated Transimpedance and Limiting Amplifier with Signal Detect
Part Number
VSC7969-W
Description
Bare Die in Waffle Pack
VSC7969WA-1A
TO-46 Flat Window, +3.3V Power Supply, VOUTN/VOUTP Outputs*
Temperature Range: 0°C ambient to +85°C case
VSC7969WD-1A
TO-46 Ball Lens, 13mm Lead,+3.3V Power Supply, VOUTN/VOUTP Outputs*
Temperature Range: 0°C ambient to +85°C case
NOTE: *TO-46 package includes an internally integrated 1310nm PIN detector.
CORPORATE HEADQUARTERS
Vitesse Semiconductor Corporation
741 Calle Plano
Camarillo, CA 93012
Tel: 1-800-VITESSE
·
FAX:1-(805) 987-5896
For application support, latest technical literature, and locations of sales offices,
please visit our web site at
www.vitesse.com
Copyright © 2002 by Vitesse Semiconductor Corporation
PRINTED IN THE U.S.A
Vitesse Semiconductor Corporation (“Vitesse”) retains the right to make changes to its products or specifications to improve performance, reliability or manufactura-
bility. All information in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without
notice at any time. While the information furnished herein is held to be accurate and reliable, no responsibility will be assumed by Vitesse for its use. Furthermore,
the information contained herein does not convey to the purchaser of microelectronic devices any license under the patent right of any manufacturer.
Vitesse products are not intended for use in life support products where failure of a Vitesse product could reasonably be expected to result in death or personal
injury. Anyone using a Vitesse product in such an application without express written consent of an officer of Vitesse does so at their own risk, and agrees to fully
indemnify Vitesse for any damages that may result from such use or sale.
Vitesse Semiconductor Corporation is a registered trademark. All other products or service names used in this publication are for identification purposes only, and
may be trademarks or registered trademarks of their respective companies. All other trademarks or registered trademarks mentioned herein are the property of their
respective holders..
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