VSC7810 [VITESSE]
Photodetector/Transimpedance Amplifier Family for Optical Communication; 光电/阻放大器系列，适用于光通信
| 型号： | VSC7810 |
| 厂家： | 
VITESSE SEMICONDUCTOR CORPORATION |
| 描述： | Photodetector/Transimpedance Amplifier Family for Optical Communication |
| 文件： | 总14页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Features
• Integrated Photodetector/Transimpedance
• High Bandwidth
Amplifier Optimized for High-Speed Optical
Communications Applications
• Low Input Noise Equivalent Power
• Large Optically Active Area
• Single 5V Power Supply
• Integrated AGC
• Fibre Channel/Gigabit Ethernet Compatible
Bandwidth
(MHz)
Input Noise
(µW rms)
Optically Active Area
Part Number
Data Rate
(µm diameter)
VSC7810
Full Speed: 1.25Gb/s
1200
0.45
100
General Description
The VSC7810 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting light from a fiber optic communications channel into a differential output voltage. The benefits
of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high bandwidth
and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty cycle dis-
tortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are
available in either die form, flat-windowed packages or in ball-lens packages.
By using a metal-semiconductor-metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier, the input capacitance is lowered which allows for a larger optically active area than in discrete photo-
detectors. Integration also allows superior tracking over process, temperature and voltage between the photode-
tector and the amplifier, resulting in higher performance. This part can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7810 Block Diagram
Photodetector/Transimpedance Amplifier
+3.3V
DOUTP
DOUTN
GND
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52145-0, Rev 4.1
04/05/01
Page 1
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Table 1: Electro-Optical Specifications(1)
Symbol
Parameter
Supply Voltage
Min
Typ(2)
Max
Units
Conditions
VSS
IDD
4.5
13
5.0
26
5.5
40
V
Supply Current
mA
Frequencies up to 40MHz
(includes external filter).
PSRR
Power Supply Rejection Ratio
35
-
-
dB
λ
Wavelength
700
-
840
-
850
1.8
nm
MHz
MHz
dBm
Ω
fC
BW
S
Low Frequency Cutoff
Optical Modulation Bandwidth
Sensitivity
-3dB, P = -15dBm @ 50MHz(4)
-3dB, P = -15dBm @ 50MHz(4)
1.063Gb/s, BER10-12(3)
800
-22
25
1200
-25
-
1300
-27
RO
Single-Ended Output Impedance
60
P = -4.5dBm,
RLOAD = 100Ω differential
VD
RD
Differential Output Voltage
Differential Responsivity
0.35
0.8
0.52
2.2
0.65
-
V
RLOAD = 100Ω
P = -15dBm @ 50MHz
mV/µW
VDC
Output Bias Voltage
1.2
-
1.5
40
2.5
150
0.93
0.75
4.5
V
∆VDC
NEPO
VNO
Bias Offset Voltage
mV
Input Noise Equivalent Power
Output Noise Voltage
Duty Cycle Distortion
Output Drive Current
0.35
0.55
-
0.45
0.66
1.5
-
µW rms P = 0mW(5)
mV rms P = 0mW(5)
DCD
IOUT
%
P = -4.5dBm
2.5
8
mA
P = -4.5dBm
+/-10% Voltage Window
PDJ
Pattern Dependent Jitter
20
40
60
ps
Optically Active Area
PP Jitter
-
100
160
355
325
-
µm
ps
Diameter
PPJ
tR
120
310
280
200
400
370
P = -5dBm
Rise Time
ps
20%-80% P = -4.5dBm
20%-80% P = -4.5dBm
tF
Fall Time
ps
Notes: (1) Specified over 0°C (ambient) to 70°C (case). (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in
Application Note 48. (4) P = Incident Optical Power (5) See Note 2 in Application Note 48.
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 2
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Figure 1: Amplifude vs. Frequency
1 096.795 514 MHz
3
21
1 999.700
1 000.150
Fre q u e n cy (MHz)
Frequency response of VSC7810WB upper 3db frequency is measured with respect to response at 50 MHz
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Limits
VSS
Power Supply
6V
TSTG
HSTG
HOP
Storage Temperature
Storage Humidity
-55°C to 125°C (case temperature under bias)
5 to 95% R.H. (including condensation)
8 to 80% R.H. (excluding condensation)
+3dBm
Operating Humidity
Incident Optical Power
PINC
500 G. Half Sine Wave
Pulse Duration 1 +/-0.5 ms
3 blows in each direction
IS
Impact Shock
Vibration
20 > 2000 > 20 Hz, 10 Minutes
10 G. Peak Acceleration
VIB
4 Complete Cycles, 3 Perpendicular Axes
ESD Voltage on DOUTP, DOUTN, VSS,
GND
VESD
1500V
Table 3: Recommended Operating Conditions
Symbol
Parameter
Power Supply
Operating Temperature
Limits
VSS
TOP
4.5V to 5.5V (5V nominal)
0°C (ambient) to 70° C (case) normal range and 90°C (case) extended range(1)
NOTE: (1) See Note 1 in "Notes on Measurement Conditions & Applications" section of this data sheet for extended temperature range
operation.
G52145-0, Rev 4.1
04/05/01
Page 3
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Table 4: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die
Symbol
Description
DOUTP
DOUTN
VSS
Data output normal (with reference to incident light)
Data output complement (inverting, with reference to incident light)
Power supply
GND
Ground (package case)
Note: Pin Diagram is identical for both TO-46 and TO-56 package styles.
Figure 2: Pin Diagram
VSS
DOUTP
DOUTN
GND
Bottom View
Figure 3: Schematic View of Bare Die Pad Assignments
GND
DOUTN
GND
DOUTP
VSS
GND
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 4
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Temperature Dependence of Operating Parameters
This section describes the dependence of important operating parameters shown in Table 1 as a function of
die (or equivalently junction) tempeature and power supply. In order to relate the die temperature to an equiva-
lent case temperature, the following thermal characteristics of the package are provided (note that the thermal
conductivity is identical for TO-46 and TO-56 package styles.
Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages
Chip Size
0.168cm x 0.104cm
0.015cm2
Thermal Path
Chip Area A
Die Height (TDIE
TJ
)
0.066cm
θGaAs
Epoxy Thickness (TEPOXY
Header Thickness (THEADER
(Average for TO-46 and TO-56 package)
)
0.0076cm
)
0.115cm
θEXPOXY
Thermal Conductivities
K GaAs
K epoxy
K kovar
0.55W/cm °C
0.0186W/cm °C
0.17W/cm °C
θKOVAR
TC
T
die
0.066
=
=
= 8 °C/W
θGaAs
0.55 x 0.015
K
GaAs
A
T
epoxy
0.0076
=
=
=
=
= 27.24 °C/W
= 47 °C/W
θepoxy
0.0186 x 0.015
K
epoxy
A
T
kovar
0.12
θkovar
0.17 x 0.015
K
kovar
A
θJC
= Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W
Example:
For VSC7810 at nominal supply current of 25mA and Vss = 5V
Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C
G52145-0, Rev 4.1
04/05/01
Page 5
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Typical Operating Characteristics
IDD vs. Die Temperature
Bandwidth vs. Die Temperature
35
33
1400
1300
1200
1100
1000
900
5.5V
31
29
27
25
23
21
19
17
15
5.5V
4.5V
5V
5V
4.5V
800
10
25
50
Die Temperature ( C)
80
100
10
25
50
Die Temperature ( C)
80
100
Responsitivity vs. Die Temperature
(Small-Signal Optical Responsitivity at 850nm)
RMS Jitter with PRBS7 Data vs. Die Temperature
60
50
40
30
20
10
0
3.00
2.80
2.60
2.40
2.20
2.00
1.80
1.60
1.40
1.20
1.00
5V
4.5V
5.5V
5.5V
4.5V
5V
10
25
50
80
100
10
25
50
80
100
Die Temperature ( C)
Die Temperature ( C)
RMS Differential Output Noise Voltage
vs. Die Temperature
Duty-Cycle Distortion vs. Die Temperature
55
54
53
52
51
50
49
48
47
46
45
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
5.5V
4.5V
5.5V
4.5V
5V
5V
10
25
50
Die Temperature ( C)
80
100
10
25
50
80
100
Die Temperature ( C)
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 6
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Figure 4: Eye Diagram
229mV
46mV
/div
not
trig'd
-231mV
39.34ns
183ps/div
41.17ns
Left
15.56mV
-23.1mV
39.91ns
40.55ns
µ±1σ
µ±2σ
µ±3σ
Wfms
Top
Btm
Lft
Rgt
40.23ns
25.98ps
PkPk 146.4ps
Mean
66.349%
97.54%
100%
RMS∆
39.90521ns
Right
40.54571ns
Hits
6505
1377
G52145-0, Rev 4.1
04/05/01
Page 7
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Notes on Measurement Conditions and Applications
Note 1: Noise Measurement Method
The VSC7810 is specified to operate in the following two ranges of temperature: (a) “normal” from 0°C
(ambient) to 70°C (case) and (b) “Extended” from 0°C (ambient) to 90°C (case). In the extended range, the
operating parameters are specified in Table 6.
Table 6: Specifications Under Extended Temperature Range of Operation
Symbol
Parameter
Min
Typ(2)
Max
Units
Conditions
BW
Optical Modulation Bandwidth
800
900
-
MHz
-3dB, P= -15dBm @ 50MHz
Note 2: Noise Measurement Method
3GHz BW
Hybrid Coupler
Power Meter
HP 437B
with
P
P
2
1
RMS
Output
Noise
8481D
Power Sensor
DUT
Board
The noise voltage, (Vn), is calculated from the Output Noise Power, (Pn), into 50Ω.
Vn = Pn • 50
The noise voltage, Vn, at the output is referred back to the noise power at the input through the responsivity
R (with R in volts/watts)
Vn
NEP = ------
R
The bit error rate can be expressed as:
/
(-Q2 2)
e
.
BER =
√2πQ
where ,
–12
For a BER = 1×10
, the parameter Q = 7.
–12
The sensitivity(s) at a bit error rate of 1×10
is calculated as follows:
,
NEP
S = 10 log10
(
Q
)
1mW
where the NEP is in units of milliwatts and S is in dBm, respectively.
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 8
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Note 3: Measurement Setup for Frequency Response
DC
1
Lightwave Component
Analyzer HP8702
AC
1
Bias T
Bias T
Hybrid
Coupler
AC
2
Optical
Attenuator
Laser
DC
2
DUT
Power
Supply
Note 4: Bias T Schematic
DC Out
Signal
AC Out
G52145-0, Rev 4.1
04/05/01
Page 9
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
Package Information
Individual Die
(4x) 0.365
φ0.1
(4x) 0.055
(6x) 0.11
0.42
DOUTP
GND
DOUTN
GND
VSC7809
VSS
GND
(2x) 0.247
(2x) 0.1235
(2x) 0.18
0.835
0.94
0.05
0.05
1.04 ± 0.05
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 10
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
TO-56 Flat Window Package
Reference Isometric
G52145-0, Rev 4.1
04/05/01
Page 11
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
TO-46 Ball Lens Package—7mm Lead Length
Reference Isometric
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 12
G52145-0, Rev 4.1
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
TO-46 Ball Lens Package—13mm Lead Length
Reference Isometric
G52145-0, Rev 4.1
04/05/01
Page 13
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
Photodetector/Transimpedance Amplifier
Family for Optical Communication
VSC7810
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Page 14
G52145-0, Rev 4.1
04/05/01
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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