VSKDS203/100 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-3;![VSKDS203/100](http://pdffile.icpdf.com/pdf2/p00309/img/icpdf/VSKDS203-100_1863087_icpdf.jpg)
型号: | VSKDS203/100 |
厂家: | ![]() |
描述: | Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-3 局域网 高功率电源 二极管 |
文件: | 总7页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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VSKDS203/100
Vishay Semiconductors
www.vishay.com
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 100 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
PRODUCT SUMMARY
• Easy mounting on heatsink
IF(AV)
100 A
100 V
VR
ELECTRICAL DESCRIPTION
Package
Circuit
ADD-A-PAK
The VSKDS203.. Schottky rectifier doubler module has been
optimized for low reverse leakage at high temperature. The
Two diodes doubler circuit
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
100
UNITS
Rectangular waveform
A
V
100
tp = 5 μs sine
100 Apk, TJ = 125 °C
Range
12 800
0.87
A
VF
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VSKDS203/100
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
100
V
VRWM
Revision: 07-Jun-13
Document Number: 93225
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKDS203/100
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current per leg
IF(AV)
50 % duty cycle at TC = 121 °C, rectangular waveform
100
Following any rated
load conditionand with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
12 800
A
Maximum peak one cycle non-repetitive
surge current
IFSM
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
1700
15
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.99
1.34
0.87
1.09
3
UNITS
100 A
TJ = 25 °C
200 A
Maximum forward voltage drop
VFM
V
100 A
TJ = 125 °C
200 A
TJ = 25 °C
Maximum reverse leakage current
IRM
V
R = Rated VR
mA
TJ = 125 °C
65
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
2750
7.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/μs
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.52
0.1
°C/W
Typical thermal resistance,
case to heatsink per module
75
g
Approximate weight
2.7
oz.
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 %
Case style
Nm
JEDEC
TO-240AA compatible
Revision: 07-Jun-13
Document Number: 93225
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKDS203/100
Vishay Semiconductors
www.vishay.com
1000
100
10
1000
100
10
TJ = 175 °C
TJ = 175 °C
TJ = 25 °C
TJ = 125 °C
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
1
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10 20 30 40 50 60 70 80 90 100
93225_01
VFM - Forward Voltage Drop (V)
93225_02
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
TJ = 25 °C
1000
100
0
10 20 30 40 50 60 70 80 90 100 110
93225_03
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
93225_04
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 07-Jun-13
Document Number: 93225
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKDS203/100
Vishay Semiconductors
www.vishay.com
180
160
140
120
100
80
120
100
80
60
40
20
0
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
RMS limit
60
Square wave (D = 0.50)
Rated VR applied
40
DC
20
See note (1)
0
0
50
100
150
200
250
300
0
20
40
60
80 100 120 140 160
IF(AV) - Average Forward Current (A)
93225_05
93225_06
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
100 000
10 000
1000
100
10
100
1000
10 000
93225_07
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 07-Jun-13
Document Number: 93225
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKDS203/100
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS
KD
S
20
3
/
100
1
2
3
4
5
6
-
Vishay Semiconductors product
Circuit configuration:
1
2
-
KD = ADD-A-PAK - 2 diodes in series
S = Schottky diode
3
4
5
-
-
-
-
Average current rating (20 = 200 A)
Product silicon identification
Voltage rating (100 = 100 V)
6
CIRCUIT CONFIGURATION
(1)
~
(2)
(3)
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 07-Jun-13
Document Number: 93225
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95369
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 110A, 30V V(RRM), Silicon, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-3
VISHAY
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