VSKCS401/045 [VISHAY]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 400A, 45V V(RRM), Silicon, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-3;
| 型号： | VSKCS401/045 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 400A, 45V V(RRM), Silicon, TO-240AA, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK-3 局域网 高功率电源 二极管 |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VSKCS401/045
Vishay Semiconductors
www.vishay.com
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
PRODUCT SUMMARY
• Easy mounting on heatsink
IF(AV)
400 A
45 V
VR
ELECTRICAL DESCRIPTION
Package
Circuit
ADD-A-PAK
The VSKCS401.. Schottky rectifier common cathode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature.
Two diodes common cathodes
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
400
UNITS
Rectangular waveform
A
V
45
tp = 5 μs sine
200 Apk, TJ = 125 °C
Range
29 000
0.69
A
VF
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VSKCS401/045
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
45
V
VRWM
Revision: 07-Jun-13
Document Number: 94635
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS401/045
Vishay Semiconductors
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
400
UNITS
per module
per leg
Maximum average
forward current
IF(AV)
50 % duty cycle at TC = 120 °C, rectangular waveform
200
A
5 µs sine or 3 µs rect. pulse
29 000
Following any rated
load conditionand with
rated VRRM applied
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine or 6 ms rect. pulse
3400
270
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 24 A, L = 1 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
40
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
0.72
UNITS
200 A
TJ = 25 °C
400 A
0.98
Maximum forward voltage drop
VFM
V
200 A
0.69
TJ = 125 °C
400 A
0.96
TJ = 25 °C
20
Maximum reverse leakage current
IRM
V
R = Rated VR
mA
TJ = 125 °C
180
Maximum junction capacitance
Typical series inductance
CT
LS
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
10 300
5.0
pF
nH
Maximum voltage rate of change
dV/dt
10 000
V/µs
3000 (1 min)
3600 (1 s)
Maximum RMS insulation voltage
VINS
50 Hz
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 175
°C
Maximum thermal resistance,
junction to case per leg
RthJC
RthCS
DC operation
0.26
0.1
°C/W
Typical thermal resistance,
case to heatsink per module
75
g
Approximate weight
2.7
oz.
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
to heatsink
busbar
4
3
Mounting torque 10 ꢀ
Case style
Nm
JEDEC
TO-240AA compatible
Revision: 07-Jun-13
Document Number: 94635
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS401/045
Vishay Semiconductors
www.vishay.com
1000
100
10
10 000
1000
100
10
TJ = 175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
25 °C
0.01
0.001
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VR - ReverseVoltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
TJ = 25 °C
1000
0
10
20
30
40
50
60
VR - ReverseVoltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
0.1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 07-Jun-13
Document Number: 94635
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS401/045
Vishay Semiconductors
www.vishay.com
250
200
150
100
50
200
150
100
50
Square wave (D = 0.50)
80 % rated VR applied
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
DC
DC
see note (1)
0
0
0
50
100
150
200
250
300
0
100
200
300
400
500
600
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100 000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
10 000
1000
10
100
1000
10 000
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
Vd = 25 V
+
Current
monitor
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 07-Jun-13
Document Number: 94635
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS401/045
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS
KC
S
40
1
/
045
1
2
3
4
5
6
-
-
Vishay Semiconductors product
Circuit configuration:
1
2
KC = ADD-A-PAK - 2 diodes/common cathode
S = Schottky diode
3
4
5
-
-
-
-
Average rating (x 10)
Product silicon identification
Voltage rating (045 = 45 V)
6
CIRCUIT CONFIGURATION
(1)
(2)
(3)
+
-
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Revision: 07-Jun-13
Document Number: 94635
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7ꢁ REF.
80 0.3 (3.15 0.01ꢀꢁ
15 0.5 (0.59 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
ꢀ0 0.5 (0.79 0.0ꢀ0ꢁ
9ꢀ 0.75 (3.6 0.030ꢁ
Document Number: 95369
Revision: 11-Nov-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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www.vishay.com
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Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
VSKCS408/060
Rectifier Diode, Schottky, 1 Phase, 2 Element, 400A, 60V V(RRM), Silicon, ROHS COMPLIANT, TO-240AA COMPATIBLE, ADD-A-PAK, 3 PIN
VISHAY
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