VS-70HFL40S02 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 70A, 400V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN;
| 型号： | VS-70HFL40S02 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 70A, 400V V(RRM), Silicon, DO-203AB, DO-5, 1 PIN 快速恢复二极管 |
| 文件： | 总13页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 40 A, 70 A, 85 A
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Stud cathode and stud anode versions
• Types up to 100 VRRM
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-203AB (DO-5)
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
PRODUCT SUMMARY
• Converters
IF(AV)
40 A, 70 A, 85 A
DO-203AB (DO-5)
Single diode
• Choppers
Package
• Ultrasonic systems
Circuit configuration
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
40HFL
70HFL
70
85HFL
85
UNITS
A
40
IF(AV)
T
C maximum
85
85
85
°C
50 Hz
60 Hz
50 Hz
60 Hz
400
700
1100
IFSM
A
420
730
1151
800
2450
6050
I2t
A2s
730
2240
5523
I2t
11 300
100 to 1000
34 650
100 to 1000
85 560
100 to 1000
I2s
VRRM
Range
Range
V
See Recovery
Characteristics table
See Recovery
Characteristics table
See Recovery
Characteristics table
trr
ns
°C
TJ
-40 to 125
-40 to 125
-40 to 125
Revision: 22-Jan-14
Document Number: 93150
1
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VS-40HFL, VS-70HFL, VS-85HFL Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VRRM, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = - 40 °C TO 125 °C
V
V
RSM, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
TJ = 25 °C TO 125 °C
V
I
FM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
TYPE NUMBER (1)
TJ = 25 °C
TJ = 125 °C
VS-40HFL10S02, VS-40HFL10S05
VS-40HFL20S02, VS-40HFL20S05
VS-40HFL40S02, VS-40HFL40S05
VS-40HFL60S02, VS-40HFL60S05
VS-40HFL80S05
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
150
300
500
700
900
1100
150
300
500
700
900
1100
150
300
500
700
900
1100
0.1
10
VS-40HFL100S05
VS-70HFL10S02, VS-70HFL10S05
VS-70HFL20S02, VS-70HFL20S05
VS-70HFL40S02, VS-70HFL40S05
VS-70HFL60S02, VS-70HFL60S05
VS-70HFL80S05
0.1
0.1
15
20
VS-70HFL100S05
VS-85HFL10S02, VS-85HFL10S05
VS-85HFL20S02, VS-85HFL20S05
VS-85HFL40S02, VS-85HFL40S05
VS-85HFL60S02, VS-85HFL60S05
VS-85HFL80S05
VS-85HFL100S05
Note
(1)
Types listed are cathode case, for anode case add “R” to code, i.e. 40HFLR20S02, 85HFLR100S05 etc.
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
40HFL
70HFL
70
85HFL
85
UNITS
40
A
Maximum average forward current
at maximum case temperature
IF(AV)
180° conduction, half sine wave
75
°C
A
Maximum RMS forward current
IF(RMS)
IFRM
63
220
400
420
475
500
800
730
1130
1030
110
134
470
Maximum peak repetitive forward current
Sinusoidal half wave, 30° conduction
380
A
Sinusoidalhalfwave, 100
% VRRM reapplied,
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
700
1100
1151
1308
1369
6050
5523
8556
7810
730
initial TJ = TJ maximum
Maximum peak, one-cycle
non-repetitive forward current
IFSM
A
Sinusoidal half wave,
no voltage reapplied,
initial TJ = TJ maximum
830
870
2450
2240
3460
3160
100 % VRRM reapplied,
initial TJ = TJ maximum
Maximum I2t for fusing
I2t
A2s
No voltage reapplied,
initial TJ = TJ maximum
Maximum I2t for fusing (1)
I2t
VF(TO)
rF
t = 0.1 ms to 10 ms, no voltage reapplied 11 300
34 650 85 560
A2s
V
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
1.081
1.085
3.40
1.85
1.128
2.11
1.75
TJ = 125 °C
6.33
1.95
m
V
VFM
TJ = 25 °C, IFM = x IF(AV)
Note
(1)
I2t for time tx = I2t x tx
Revision: 22-Jan-14
Document Number: 93150
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
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RECOVERY CHARACTERISTICS
40HFL...
70HFL...
85HFL...
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
S02
S05
S02
S05
S02
S05
TJ = 25 °C, IF = 1 A to VR = 30 V,
70
180
60
200
90
150
50
200
70
120
dIF/dt = 100 A/μs
Typical reverse recovery time
trr
ns
TJ = 25 °C, - dIF/dt = 25 A/μs,
200
160
240
500
750
500
500
500
340
I
FM = x rated IF(AV)
TJ = 25 °C, IF = 1 A to VR = 30 V,
dIF/dt = 100 A/μs
Typical reverse recovered charge
Qrr
nC
TJ = 25 °C, - dIF/dt = 25 A/μs,
1300
240
1300
240
1300
I
FM = x rated IF(AV)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
40HFL 70HFL 85HFL UNITS
Junction operating temperature range
Storage temperature range
TJ
- 40 to 125
°C
TStg
- 40 to 150
Maximum thermal resistance,
RthJC
RthCS
DC operation
0.60
0.36
0.25
0.30
junction to case
K/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth,
flat and greased
Not lubricated thread, tighting on nut (1)
Lubricated thread, tighting on nut (1)
Not lubricated thread, tighting on hexagon (2)
Lubricated thread, tighting on hexagon (2)
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
25
Maximum allowable mounting torque
N · m
(lbf · in)
(+ 0 %, - 10 %)
Approximate weight
Case style
0.88
JEDEC
DO-203AB (DO-5)
Notes
(1)
Recommended for pass-through holes
Recommended for holed threaded heatsinks
(2)
IF
dIF
dt
IFM
t
trr
t
VR
IRRM (REC)
Qrr
IRRM (REC)
IF, IFM - Peak forward current prior to commulation
-dIF/dt - Rate of fail forward current
IRRM (REC) - Peak reverse recovery current
trr - Reverse recovery time
Qrr - Reverse recovered charge
Fig. 1 - Reverse Recovery Time Test Waveform
Revision: 22-Jan-14
Document Number: 93150
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
70
TJ = 125 °C
Ø = 180 °
R
th
40HFL...
S
A
60
= 0.3 -
120 °
90 °
60 °
30 °
50
40
30
20
10
0
Δ
R K/W
RMS limit
Ø
Conduction Angle
25 30 35
Average Forward Current (A)
0
5
10
15
20
40 10 20 30 40 50 60 70 80 90 100
Maximum Allowable Ambient Temperature (°C)
Fig. 2 - Current Rating Nomogram (Sinusoidal Waveforms), 40HFL Series
100
90
80
70
60
50
40
30
20
10
0
TJ = 25 °C
Ø = DC
180°
120°
60°
40HFL...
R
th
S
A
= 0.3 -
Δ
R K/W
RMS limit
ConductØion Angle
0
10
20
30
40
50
60
70 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Current Rating Nomogram (Rectangular Waveforms), 40HFL Series
120
100
80
70HFL...
TJ = 125 °C
Ø = 180°
120°
90°
R
th
S
A
= 0.3 -
60°
30°
Δ
R K/W
60
40
RMS limit
20
0
Ø
Conduction Angle
0
10
20
30
40
50
60
70 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 70HFL Series
Revision: 22-Jan-14
Document Number: 93150
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
30
TJ = 150 °C
70HFL...
R
th
S
A
= 2.0 -
25
20
15
10
5
Ø = 180°
Δ
R K/W
120°
60°
30°
DC
RMS limit
ConductØion Angle
no heatsink
0
0
2
4
6
8
10 12 14 16 18 20 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Current Rating Nomogram (Rectangular Waveforms), 70HFL Series
25
20
85HFL... TJ = 150 °C
R
th
S
A
= 3.0 -
Ø = 180°
120°
60°
Δ
R K/W
30°
15
10
5
RMS limit
Ø
Conduction Angle
0
0
2
4
6
8
10
12
14
16 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Current Rating Nomogram (Sinusoidal Waveforms), 85HFL Series
35
30
25
85HFL...
TJ = 150 °C
R
th
S
= 3.0 -
A
Ø = 180°
120°
60°
Δ
R K/W
20
15
10
30°
RMS limit
DC
5
0
ConductØion Angle
0
5
10
15
20
25 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Current Rating Nomogram (Rectangular Waveforms), 85HFL Series
Revision: 22-Jan-14
Document Number: 93150
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
www.vishay.com
Vishay Semiconductors
104
103
102
10
103
40HFL...
TJ = 125 °C
40HFL...
Ø = 180°
120°
60°
Ø = DC
180°
120°
60°
102
30°
30°
TJ = 125 °C
Ø
10
Ø
TJ = 25 °C
1
0
102
103
104
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 40HFL Series
Fig. 11 - Maximum Forward Voltage vs. Forward Current,
40HFL Series
104
103
T
= 125 °C
70HFL...
J
70HFL...
Ø = 180°
120°
60°
Ø = DC
180°
102
103
30°
120°
60°
TJ = 125 °C
30°
Ø
102
10
10
Ø
TJ = 25 °C
1
10
102
103
104
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 9 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 70HFL Series
Fig. 12 - Maximum Forward Voltage vs. Forward Current,
70HFL Series
104
103
TJ = 125 °C
85HFL...
85HFL...
Ø = 180°
120°
60°
Ø = DC
180°
102
103
120°
60°
TJ = 125 °C
30°
30°
Ø
102
10
10
Ø
TJ = 25 °C
1
10
102
103
104
0
1
2
3
4
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 10 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 85HFL Series
Fig. 13 - Maximum Forward Voltage vs. Forward Current,
85HFL Series
Revision: 22-Jan-14
Document Number: 93150
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VS-40HFL, VS-70HFL, VS-85HFL Series
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Vishay Semiconductors
125
125
40HFL...
85HFL...
Ø = 180°
Ø = 180°
120°
60°
110
110
100
90
120°
60°
30°
100
30°
90
Ø = 180°
120°
90°
Ø
Ø = 180°
80
70
60
50
80
Ø
120°
90°
60°
30°
70
60°
30°
60
DC
DC
50
Ø
Ø
40
40
0
20
40
60
80
100
120
140
0
10
20
30
40
50
60
70
Average Forward Current (A)
Average Forward Current (A)
Fig. 14 - Average Forward Current vs. Maximum Allowable Case
Temperature, 40HFL Series
Fig. 16 - Average Forward Current vs. Maximum Allowable Case
Temperature, 85HFL Series
125
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
70HFL...
Ø = 180°
110
100
90
120°
60°
30°
1.0
0.8
Ø
Ø = 180°
120°
90°
80
0.6
0.4
0.2
0
60 Hz
70
60°
50 Hz
8 10
60
30°
DC
50
Ø
40
1
2
4
6
20
40 60
0
20
40
60
80
100
120
Number Of Equal Amplitude
Halfe Cycle Current Pulses (N)
Average Forward Current (A)
Fig. 15 - Average Forward Current vs. Maximum Allowable Case
Temperature, 70HFL Series
Fig. 17 - Maximum Non-Repetitive Surge Current
vs. Number of Current Pulses, All Series
1
40HFL...
70HFL...
85HFL...
-1
10
-2
10
-3
-2
-1
10
10
10
1
Square Wave Pulse Duration (s)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case vs. Pulse Duration, All Series
Revision: 22-Jan-14
Document Number: 93150
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Vishay Semiconductors
105
1000
40HFL...S02
40HFL...S05
600
500
400
300
IF = 125 A
IF = 20 A
104
IF = 1 A
200
TJ = 25 °C
F = 125 A
IF = 20 A
F = 1 A
103
100
TJ = 125 °C
I
60
50
40
I
TJ = 125 °C
IF = 125 A
102
30
IF = 20 A
F = 1 A
I
20
TJ = 25 °C
10
10
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Fig. 19 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current (A/μs)
Fig. 22 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S05 Series
Rate of Fall of Forward Current, 40HFL...S02 Series
105
40HFL...S10
40HFL...S02
TJ = 125 °C
6000
5000
4000
3000
I
I
F = 125 A
F = 20 A
IF = 125 A
IF = 20 A
IF = 1 A
104
103
102
10
IF = 1 A
2000
1000
TJ = 125 °C
600
500
400
TJ = 25 °C
IF = 125 A
300
TJ = 25 °C
I
I
F = 20 A
F = 1 A
200
100
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 20 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...S02 Series
Fig. 23 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 40HFL...Series
105
104
103
102
10
40HFL...S05
40HFL...S10
IF = 125 A
IF = 20 A
IF = 1 A
6000
5000
4000
TJ = 125 °C
3000
I
I
I
F = 125 A
F = 20 A
F = 1 A
2000
TJ = 125 °C
1000
600
500
400
TJ = 25 °C
300
TJ = 25 °C
I
I
F = 125 A
F = 20 A
200
IF = 1 A
100
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Fig. 21 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current (A/μs)
Fig. 24 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 40HFL...Series
Rate of Fall of Forward Current, 40HFL...S05 Series
Revision: 22-Jan-14
Document Number: 93150
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VS-40HFL, VS-70HFL, VS-85HFL Series
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Vishay Semiconductors
104
1000
70HFL...S02
70HFL...S05
500
400
300
IF = 220 A
IF = 50 A
IF = 1 A
103
200
TJ = 25 °C
IF = 220 A
102
100
TJ = 125 °C
I
I
F = 50 A
F = 1 A
60
50
40
TJ = 125 °C
I
I
I
F = 220 A
F = 50 A
F = 1 A
10
30
TJ = 25 °C
20
10
1
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Fig. 25 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current (A/μs)
Fig. 28 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S05 Series
Rate of Fall of Forward Current, 70HFL...S02 Series
105
70HFL...S10
70HFL...S02
TJ = 125 °C
6000
5000
4000
3000
I
I
I
F = 220 A
F = 50 A
F = 1 A
IF = 220 A
IF = 50 A
IF = 1 A
104
103
102
10
2000
1000
TJ = 125 °C
600
500
400
TJ = 25 °C
I
I
I
F = 220 A
F = 50 A
F = 1 A
300
200
TJ = 25 °C
3
100
1
3
10
30
100
1
10
30
100
Rate of Fall of Forward Current (A/μs)
Fig. 29 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current (A/μs)
Fig. 26 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL...S02 Series
Rate of Fall of Forward Current, 70HFL... Series
105
70HFL...S05
70HFL...S10
IF = 220 A
F = 50 A
IF = 1 A
I
TJ = 125 °C
IF = 220 A
4000
3000
104
103
102
10
I
I
F = 50 A
F = 1 A
2000
TJ = 125 °C
1000
600
500
400
TJ = 25 °C
300
TJ = 25 °C
I
I
F = 220 A
F = 50 A
200
IF = 1 A
100
1
3
10
30
100
1
3
10
30
100
Rate of Fall of Forward Current (A/μs)
Fig. 27 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current (A/μs)
Fig. 30 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 70HFL... Series
Rate of Fall of Forward Current, 70HFL...S05 Series
Revision: 22-Jan-14
Document Number: 93150
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40HFL, VS-70HFL, VS-85HFL Series
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Vishay Semiconductors
103
105
85HFL...S02
85HFL...S05
103
IF = 265 A
IF = 50 A
IF = 1 A
104
102
TJ = 25 °C
F = 265 A
IF = 50 A
IF = 1 A
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
102
10
I
10
1
10
100
1
4
10
40
100
Rate of Fall of Forward Current (A/μs)
Rate of Fall of Forward Current (A/μs)
Fig. 31 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
Fig. 34 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
104
103
85HFL...S10
85HFL...S02
IF = 265 A
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
103
102
IF = 50 A
IF = 1 A
102
TJ = 25 °C
IF = 265 A
IF = 50 A
10
1
IF = 1 A
10
1
10
100
1
4
10
40
100
Rate of Fall of Forward Current (A/μs)
Fig. 35 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL... Series
Rate of Fall of Forward Current (A/μs)
Fig. 32 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL...S02 Series
104
105
85HFL...S05
85HFL...S10
IF = 265 A
IF = 50 A
IF = 1 A
TJ = 125 °C
IF = 265 A
IF = 50 A
IF = 1 A
103
104
103
102
10
TJ = 25 °C
IF = 265 A
IF = 50 A
IF = 1 A
102
1
4
10
40
100
1
10
100
Rate of Fall of Forward Current (A/μs)
Fig. 33 - Typical Reverse Recovery Time vs.
Rate of Fall of Forward Current, 85HFL...S05 Series
Rate of Fall of Forward Current (A/μs)
Fig. 36 - Typical Recovered Charge vs.
Rate of Fall of Forward Current, 85HFL... Series
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95312
Revision: 22-Jan-14
Document Number: 93150
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL
DIMENSIONS FOR 40HFL/70HFL in millimeters (inches)
Ø 14.6 (0.57)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 0.4
(0.44 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
17.40 (0.68)
Document Number: 95312
Revision: 29-Sep-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
40HFL, 70HFL and 85HFL
DIMENSIONS FOR 85HFL in millimeters (inches)
Ø 15 (0.59)
6.1/7
(0.24/0.27)
4 (0.16)
4 (0.16) MIN.
25.4 (1) MAX.
10.8 (0.42)
11.4 (0.45)
11.1 0.4
(0.44 0.02)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.20 (0.04)
17.35 (0.68)
www.vishay.com
2
For technical questions, contact: indmodules@vishay.com
Document Number: 95312
Revision: 29-Sep-08
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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