VS-60APU06L-N3 [VISHAY]
Rectifier Diode,;
| 型号： | VS-60APU06L-N3 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, |
| 文件： | 总7页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VS-60EPU06L-N3
Vishay Semiconductors
www.vishay.com
Ultrafast Soft Recovery Diode, 60 A FRED Pt®
FEATURES
Base
cathode
2
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
2
• AEC-Q101 qualified, meets JESD 201 class 1A
whisker test
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
1
3
TO-247AD 2L
Cathode
Anode
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRIMARY CHARACTERISTICS
IF(AV)
60 A
600 V
1.11 V
VR
VF at IF
DESCRIPTION / APPLICATIONS
t
rr typ.
See Recovery table
175 °C
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
TJ max.
Package
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
TO-247AD 2L
Single
Circuit configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
600
UNITS
Cathode to anode voltage
V
Continuous forward current
IF(AV)
TC = 116 °C
60
Single pulse forward current
IFSM
TC = 25 °C
600
A
Maximum repetitive forward current
Operating junction and storage temperatures
IFRM
Square wave, 20 kHz
120
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
600
-
-
IF = 60 A
-
-
-
-
-
-
1.35
1.20
1.11
-
1.68
1.42
1.30
50
V
Forward voltage
VF
IF = 60 A, TJ = 125 °C
IF = 60 A, TJ = 175 °C
VR = VR rated
Reverse leakage current
Junction capacitance
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 600 V
-
500
-
CT
39
Revision: 09-Jul-2019
Document Number: 96628
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06L-N3
Vishay Semiconductors
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V
TJ = 25 °C
MIN.
TYP.
MAX.
UNITS
-
-
-
-
-
-
-
34
45
-
Reverse recovery time
trr
81
ns
TJ = 125 °C
164
7.4
-
IF = 60 A
dIF/dt = 200 A/μs
TJ = 25 °C
-
Peak recovery current
IRRM
Qrr
A
TJ = 125 °C
17.0
300
1394
-
V
R = 200 V
TJ = 25 °C
-
Reverse recovery charge
nC
TJ = 125 °C
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
RthJC
-
-
0.63
K/W
Thermal resistance,
case to heatsink
Mounting surface, flat, smooth
and greased
RthCS
-
0.2
-
-
-
5.5
0.2
-
-
g
Weight
oz.
1.2
(10)
2.4
(20)
N m
(lbf in)
Mounting torque
Marking device
-
Case style TO-247AD 2L
60EPU06L
1000
100
10
1000
100
10
TJ = 175 °C
TJ = 125 °C
1
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.1
0.01
TJ = 25 °C
1
0.001
0
100
200
300
400
500
600
0
0.5
1.0
1.5
2.0
2.5
3.0
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Revision: 09-Jul-2019
Document Number: 96628
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06L-N3
Vishay Semiconductors
www.vishay.com
1000
100
10
TJ = 25 °C
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.7
0.5
0.3
Ri (°C/W)
0.06226
0.32503
0.24271
τi (s)
0.00049
0.01294
0.24310
0.1
0.1
R1
R2
R3
TJ
TC
Notes:
0.05
τ1
τ2
τ3
1. Duty factor D = ton/period
2. Peak TJ = PDM x ZthJC + TC
Ci = τi/Ri
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
ton - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
180
160
140
120
100
80
140
120
100
80
DC
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
60
Square wave (D = 0.50)
80 % rated VR applied
40
DC
20
0
See note (1)
60
0
20
40
60
80
100
0
20
40
60
80
100
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 09-Jul-2019
Document Number: 96628
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06L-N3
Vishay Semiconductors
www.vishay.com
300
250
200
150
100
50
3000
2500
2000
1500
1000
500
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
IF = 30 A
IF = 60 A
IF = 30 A
IF = 60 A
0
10
10
100
dIF/dt (A/µs)
1000
100
1000
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
(3)
trr
IF
ta
tb
0
(4)
Qrr
(2)
IRRM
0.5 IRRM
(5)
di(rec)M/dt
0.75 IRRM
diF/dt
(1)
(4) Qrr - area under curve defined by trr
(1) diF/dt - rate of change of current
and IRRM
through zero crossing
trr x IRRM
(2) IRRM - peak reverse recovery current
Qrr
=
2
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 09-Jul-2019
Document Number: 96628
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-60EPU06L-N3
Vishay Semiconductors
www.vishay.com
ORDERING INFORMATION TABLE
Device code
VS-
60
E
P
U
06
-N3
L
8
1
2
3
4
5
6
7
1
-
-
-
Vishay Semiconductors product
Current rating (60 = 60 A)
2
3
Circuit configuration:
E = single diode
A = single diode, 3 pins
-
-
-
-
P = TO-247
4
5
6
7
8
U = ultrafast recovery
Voltage rating (06 = 600 V)
L = long lead
-
Environmental digit:
-N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
Antistatic plastic tube
VS-60EPU06L-N3
25
500
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95536
Part marking information
SPICE model
www.vishay.com/doc?95648
www.vishay.com/doc?95545
Revision: 09-Jul-2019
Document Number: 96628
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
www.vishay.com
TO-247AD 2L
DIMENSIONS in millimeters and inches
A
A
(3)
(6)
E
F P
(Datum B)
F P1
B
A2
A
S
M
M
Ø K D B
(2) R/2
D2
Q
2 x R
(2)
D1 (4)
D
4
D
1, 2
3
Thermal pad
(5) L1
C
(4)
E1
L
See view B
A
M
M
0.01 D B
View A - A
C
2 x b2
2 x b
2 x e
A1
M
M
0.10 C A
(b1, b3)
Plating
Base metal
D D
(c)
c1
C
C
(b, b2)
(4)
Section C - C, D - D
View B
MILLIMETERS
INCHES
MIN.
MILLIMETERS
INCHES
SYMBOL
NOTES
SYMBOL
NOTES
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
0.38
0.38
19.71
13.08
0.51
MAX.
5.31
2.59
2.49
1.40
1.35
2.39
2.34
0.89
0.84
20.70
-
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.092
0.035
0.033
0.815
-
MIN.
15.29
13.46
MAX.
MIN.
MAX.
0.625
-
A
A1
A2
b
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.015
0.015
0.776
0.515
0.020
E
E1
e
15.87
-
0.602
0.53
3
5.46 BSC
0.254
20.32
0.215 BSC
0.010
0.800
Ø K
L
b1
b2
b3
c
19.81
3.71
3.56
-
0.780
0.146
0.14
-
L1
Ø P
Ø P1
Q
4.29
3.66
6.98
5.69
5.49
0.169
0.144
0.275
0.224
0.216
c1
D
5.31
4.52
0.209
0.178
3
4
R
D1
D2
S
5.51 BSC
0.217 BSC
1.35
0.053
Notes
(1)
(2)
(3)
(4)
(5)
(6)
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
(7)
Revision: 28-May-2018
Document Number: 95536
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2019
Document Number: 91000
1
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