VF20150S_15 [VISHAY]
High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | VF20150S_15 |
| 厂家： | 
VISHAY |
| 描述： | High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VF20150S
Vishay General Semiconductor
www.vishay.com
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.55 V at IF = 5 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
3
2
1
VF20150S
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
PIN 1
PIN 2
power supplies, freewheeling diodes, OR-ing diode, and
PIN 3
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
20 A
150 V
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IFSM
160 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 20 A
TJ max.
0.75 V
150 °C
Package
Diode variation
ITO-220AB
Single die
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF20150S
150
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
V
A
IF(AV)
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
160
A
Voltage rate of change (rated VR)
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 28-Oct-13
Document Number: 89268
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF20150S
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 5 A
0.69
0.84
1.15
0.55
0.64
0.75
2.0
-
IF = 10 A
IF = 20 A
IF = 5 A
TA = 25 °C
-
1.43
-
(1)
Instantaneous forward voltage
VF
V
IF = 10 A
IF = 20 A
TA = 125 °C
-
0.82
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 100 V
VR = 150 V
2.5
-
(2)
Reverse current
IR
-
250
25
5
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VF20150S
UNIT
Typical thermal resistance
RJC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
ITO-220AB
VF20150S-M3/4W
1.75
4W
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
25
20
15
10
5
20
18
16
14
12
10
8
D = 0.8
Resistive or Inductive Load
D = 0.5
D = 0.3
D = 0.2
D = 1.0
T
D = 0.1
6
4
2
D = tp/T
tp
Mounted on Specific Heatsink
0
0
0
2
4
6
8
10 12 14 16 18 20 22 24
0
25
50
75
100
125
150
175
Average Forward Current (A)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Revision: 28-Oct-13
Document Number: 89268
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VF20150S
Vishay General Semiconductor
www.vishay.com
100
10
10
Junction to Case
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
1
TA = 25 °C
0.1
0.1
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
t - Pulse Duration (s)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
TA = 125 °C
10
1
TA = 100 °C
0.1
0.01
TA = 25 °C
0.001
0.0001
100
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
Reverse Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 28-Oct-13
Document Number: 89268
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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