VBP104FAS [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | VBP104FAS |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VBP104FAS, VBP104FASR
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: GW, RGW
VBP104FAS
• Dimensions (L x W x H in mm): 6.4 x 3.9 x 1.2
• Radiant sensitive area (in mm2): 4.4
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = 65°
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
VBP104FASR
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
21726-1
APPLICATIONS
DESCRIPTION
• High speed detector for infrared radiation
VBP104FAS and VBP104FASR are high speed and high
sensitive PIN photodiodes. It is a surface mount device
(SMD) including the chip with a 4.4 mm2 sensitive area and
a daylight blocking filter matched with IR emitters operating
at wavelength 870 nm or 950 nm.
• Infrared
remote
control
and
free
air
data
transmissionsystems, e.g. in combination with TSFFxxxx
series IR emitters
PRODUCT SUMMARY
COMPONENT
VBP104FAS
VBP104FASR
Ira (µA)
35
ϕ (deg)
65
λ0.5 (nm)
780 to 1050
780 to 1050
35
65
Note
•
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
Gullwing
VBP104FAS
Tape and reel
Tape and reel
MOQ: 1000 pcs, 1000 pcs/reel
MOQ: 1000 pcs, 1000 pcs/reel
VBP104FASR
Reverse gullwing
Note
MOQ: minimum order quantity
•
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
60
UNIT
V
Reverse voltage
VR
Power dissipation
Tamb ≤ 25 °C
PV
215
mW
°C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Tj
100
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
°C
°C
Acc. reflow sloder profile fig. 8
Tsd
°C
RthJA
350
K/W
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
1
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
Breakdown voltage
Reverse dark current
IF = 50 mA
VF
1
1.3
I
R = 100 µA, E = 0
R = 10 V, E = 0
V(BR)
Iro
60
V
V
2
48
30
40
nA
V
V
R = 0 V, f = 1 MHz, E = 0
R = 3 V, f = 1 MHz, E = 0
CD
pF
Diode capacitance
CD
17
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
Vo
350
- 2.6
32
mV
mV/K
µA
Temperature coefficient of Vo
Short circuit current
TKVo
Ik
Temperature coefficient of Ik
TKIk
0.1
%/K
Reverse light current
Ira
25
35
µA
V
R = 5 V
Angle of half sensitivity
ϕ
65
950
deg
nm
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
λp
λ 0.5
NEP
780 to 1050
4 x 10-14
nm
V
R = 10 V, λ = 950 nm
W/√Hz
V
R = 10 V, RL = 1 kΩ,
λ = 820 nm
Rise time
Fall time
tr
tf
100
100
ns
ns
V
R = 10 V, RL = 1 kΩ,
λ = 820 nm
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
1.4
1.2
1.0
VR = 5 V
λ = 950 nm
0.8
VR = 10 V
80
0.6
1
20
40
60
100
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
94 8403
Tamb - Ambient Temperature (°C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
1000
100
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VR = 5 V
λ = 950 nm
1
0.1
0.01
10
0.1
1
600
700
800
900
1000
1100
Ee - Irradiance (mW/cm2)
21743
λ - Wavelength (nm)
94 8421
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
100
30°
40°
λ = 950 nm
1 mW/cm2
0.5 mW/cm2
1.0
0.9
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
10
50°
60°
0.8
70°
0.7
80°
1
0.1
1
10
100
0.6
0.4
0.2
0
94 8422
VR - Reverse Voltage (V)
94 8406
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80
E = 0
f = 1 MHz
60
40
20
0
0.1
1
10
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
100
94 8423
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
3
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
PACKAGE DIMENSIONS FOR VBP104FAS in millimeters
Flat area 0.3 min.
4.4 0.1
Chip Size
2.4 x 2.4
2.2
0.18 0.2
Cathode
Anode
1
0.15
6.4 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
5.4
Drawing-No.: 6.541-5088.01-4
Issue: 1; 15.04.10
22107
www.vishay.com
4
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
PACKAGE DIMENSIONS FOR VBP104FASR in millimeters
Flat area 0.3 min.
4.4 0.1
Chip Size
2.2
0.18 0.2
2.4 x 2.4
Cathode
Anode
1
0.15
6.4 0.3
technical drawings
according to DIN
specifications
Recommended solder pad
8.9
5.4
Drawing-No.: 6.541-5087.01-4
Issue: 1; 15.04.10
22106
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
5
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
TAPING DIMENSIONS FOR VBP104FAS in millimeters
21730
TAPING DIMENSIONS FOR VBP104FASR in millimeters
21731
www.vishay.com
6
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81169
Rev. 1.1, 20-Apr-10
VBP104FAS, VBP104FASR
Silicon PIN Photodiode
Vishay Semiconductors
REEL DIMENSIONS FOR VBP104FAS AND VBP104FASR in millimeters
21732
SOLDER PROFILE
DRYPACK
300
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
200
150
100
50
FLOOR LIFE
max. 30 s
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
max. 100 s
max. 120 s
max. ramp down 6 °C/s
max. ramp up 3 °C/s
0
DRYING
0
50
100
150
200
250
300
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
19841
Time (s)
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
96 h at 60 °C (+ 5 °C), RH < 5 %.
Document Number: 81169
Rev. 1.1, 20-Apr-10
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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