V8KM60DU-M3/H [VISHAY]
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier;
| 型号： | V8KM60DU-M3/H |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier |
| 文件： | 总5页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V8KM60DU
Vishay General Semiconductor
www.vishay.com
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.41 V at IF = 2 A
FEATURES
1
2
Available
• Trench MOS Schottky technology
3
• Low forward voltage drop, low power losses
4
• High efficiency operation
8
7
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
6
5
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
FlatPAK 5 x 6
1 and / or 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
7, 8
5, 6
3 and / or 4
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
click logo to get started
DESIGN SUPPORT TOOLS
Models
MECHANICAL DATA
Available
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
PRIMARY CHARACTERISTICS
Base P/NHM3
- halogen-free, RoHS-compliant, and
IF(AV)
2 x 4 A
60 V
AEC-Q101 qualified
VRRM
IFSM
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
80 A
VF at IF = 4 A (TA = 125 °C)
TJ max.
0.50 V
175 °C
Package
FlatPAK 5 x 6
Circuit configuration
Separated cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8KM60DU
UNIT
Device marking code
V8M60D
Maximum repetitive peak reverse voltage
VRRM
60
4
V
A
A
(1)
IF(AV)
Maximum DC forward current per diode
(2)
IF(AV)
3
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
80
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Notes
(1)
(2)
(3)
With infinite heatsink
Free air, mounted on recommended pad area
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 18-Jul-2018
Document Number: 87536
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8KM60DU
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.51
0.56
0.41
0.50
-
MAX.
UNIT
IF = 2 A
-
0.64
-
TA = 25 °C
IF = 4 A
IF = 2 A
IF = 4 A
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
0.58
0.3
6
TA = 25 °C
(2)
Reverse current per diode
V
R = 60 V
IR
mA
pF
TA = 125 °C
1.5
Typical junction capacitance per diode
4.0 V, 1 MHz
CJ
500
-
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: pulse width ≤ 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TYP.
100
3.5
MAX.
UNIT
(1)(2)
RθJA
-
Thermal resistance per diode
°C/W
(3)
RθJM
4.5
Notes
(1)
The heat generated must be less than thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Free air, mounted on recommended copper pad area; thermal resistance RθJA - junction-to-ambient
Mounted on infinite heat sink; thermal resistance RθJM - junction-to-mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
V8KM60DU-M3/H
V8KM60DU-M3/I
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.10
0.10
0.10
0.10
H
I
1500
6000
1500
6000
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V8KM60DUHM3/H (1)
V8KM60DUHM3/I (1)
H
I
Note
(1)
AEC-Q101 qualified
Revision: 18-Jul-2018
Document Number: 87536
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8KM60DU
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
5
4
3
2
1
0
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 175 °C
RthJM = 3.5 °C/W
1
0.1
TJ = 100 °C
TJ = 25 °C
RthJA = 100 °C/W
0.01
0.001
0.0001
0.00001
0.000001
TM measured at
cathode terminal
mount typical values
TJ = -40 °C
0
25 50 75
100
125
150
175
10 20 30 40 50 60 70 80 90 100
Ambient / Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
3.0
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
TJ = 25 °C
f = 1.0 MHz
D = 0.8
2.5
Vsig = 50 mVp-p
D = 0.5
1000
100
10
2.0
D = 0.3
D = 1.0
D = 0.2
1.5
D = 0.1
1.0
T
0.5
D = tp/T
tp
1
0.0
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
10
1
1000
100
10
TJ = 175 °C
TJ = 150 °C
Junction-to-ambient
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
TJ = -40 °C
0.1
1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 3 - Typical Instantaneous Forward Characteristics
Revision: 18-Jul-2018
Document Number: 87536
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V8KM60DU
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D
D1
6 x e
8 x b
(d1)
8
7
6
5
5
6
7
2
8
F1
F2
F2
F1
(2 x d2)
4
3
1
D3
1
2
3
4
2 x D4
Top View
D2
Bottom View
(Dual Pad)
0.180 (4.56)
0.082 (2.08)
0.030 (0.75)
(8 x Θ)
Side View
0.219 (5.55)
0.050 (1.27)
0.030 (0.75)
PCB Footprint
(Dual Pad)
INCHES
NOM.
0.039
0.006
0.017
0.017
-
0.203
0.193
0.161
0.024
0.069
0.016
0.005
0.244
0.232
0.165
0.144
MILLIMETERS
DIM.
MIN.
0.035
-
MAX.
0.043
-
MIN.
0.89
-
NOM.
0.99
0.15
0.43
0.43
-
5.15
4.90
4.10
0.60
1.75
0.40
0.125
6.20
5.90
4.20
3.65
1.27 BSC
-
MAX.
1.09
-
A
(a)
b
b1
c
0.013
0.013
0.008
0.197
0.189
0.154
0.020
0.063
-
0.020
0.020
0.014
0.209
0.197
0.169
0.031
0.075
-
0.32
0.32
0.20
5.00
4.80
3.90
0.50
1.60
-
0.52
0.52
0.35
5.30
5.00
4.30
0.80
1.90
-
D
D1
D2
D3
D4
(d1)
(d2)
E
E1
E2
(E3)
e
-
-
-
-
0.238
0.228
0.157
-
0.250
0.236
0.173
-
6.05
5.80
4.00
-
6.35
6.00
4.40
-
0.050 BSC
(K)
L1
L2
M
0.039
0.019
0.012
0.128
0°
-
-
-
1.00
0.48
0.30
3.25
0°
-
0.043
0.031
0.148
10°
-
-
1.10
0.80
3.75
10°
-
0.138
-
3.50
-
Θ
Notes
•
•
•
Dimensioning and tolerancing per ASME Y14.5-2009
Dimensions D1 and E1 do not include mold flash or gate burrs
Dimension (XX) means reference only
Revision: 18-Jul-2018
Document Number: 87536
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021
Document Number: 91000
1
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