V80170PW-M3_15 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | V80170PW-M3_15 |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V80170PW-M3
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
TYPICAL APPLICATIONS
PIN 1
PIN 3
PIN 2
CASE
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-3PW
IF(AV)
2 x 40 A
170 V
Molding compound meets UL 94 V-0 flammability rating
VRRM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
IFSM
280 A
VF at IF = 40 A
TJ max.
Package
0.68 V
175 °C
TO-3PW
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V80170PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
170
80
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
280
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 04-Dec-13
Document Number: 89946
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V80170PW-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 10 A
0.65
0.74
0.82
0.51
0.59
0.68
3.1
-
IF = 20 A
IF = 40 A
IF = 10 A
IF = 20 A
IF = 40 A
TA = 25 °C
-
0.91
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.76
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 136 V
VR = 170 V
3.8
-
(2)
Reverse current per diode
IR
-
600
80
7.3
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 20 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V80170PW
UNIT
per diode
per device
0.7
0.5
Typical thermal resistance
RJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
4.5
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-3PW
V80170PW-M3/4W
4W
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
D = 0.8
D = 1.0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
T
D = tp/T
tp
0
0.0
0
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40 45 50
Average Forward Current (A)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
Document Number: 89946
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V80170PW-M3
Vishay General Semiconductor
www.vishay.com
100
10
1
10 000
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.6
0.1
0
0.2
0.4
0.8
1.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
Fig. 5 - Typical Junction Capacitance Per Diode
Junction to Case
100
TA = 175 °C
1
TA = 150 °C
= 125 °C
10
T
1
0.1
TA = 100 °C
0.01
TA = 25 °C
0.001
0.0001
0.1
0.01
0.1
1
10
100
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
Fig. 6 - Typical Transient Thermal Impedance Per Device
0.645 (16.38)
0.175 (4.45)
0.625 (15.87)
0.165 (4.19)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
R0.155 (R3.94)
R0.145 (R3.68)
0.323 (8.20)
0.313 (7.95)
3° Ref.
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.077 (1.96)
0.063 (1.60)
0.170 (4.32)
10° Typ.
Both Sides
0.840 (21.34)
0.820 (20.83)
0.467 (11.86)
0.079 (2.01)
0.453 (11.51)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.065 (1.65)
0.160 (4.06)
0.140 (3.56)
5° Ref.
Both Sides
3° Ref.
3° Ref.
0.090 (2.29)
0.080 (2.03)
0.098 (2.50)
0.083 (2.12)
0.565 (14.35)
0.545 (13.84)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
0.225 (5.72)
0.205 (5.21)
Revision: 04-Dec-13
Document Number: 89946
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
Document Number: 91000
1
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