V60170PW-M3_15 [VISHAY]
Dual High-Voltage Trench MOS Barrier Schottky Rectifier;
| 型号： | V60170PW-M3_15 |
| 厂家： | 
VISHAY |
| 描述： | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V60170PW-M3
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 10 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-3PW
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case: TO-3PW
PRIMARY CHARACTERISTICS
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 30 A
170 V
Base P/N-M3
- halogen-free, RoHS-compliant, and
VRRM
commercial grade
IFSM
260 A
VF at IF = 30 A
TJ max.
Package
0.65 V
175 °C
TO-3PW
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60170PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
170
60
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
260
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 04-Dec-13
Document Number: 89944
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60170PW-M3
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
IF = 10 A
0.66
0.72
0.80
0.52
0.56
0.65
2.6
-
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
TA = 25 °C
-
0.93
-
(1)
Instantaneous forward voltage per diode
VF
V
TA = 125 °C
-
0.73
-
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
μA
mA
μA
VR = 136 V
VR = 170 V
3.2
-
(2)
Reverse current per diode
IR
-
500
60
6.2
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 20 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60170PW
UNIT
per diode
per device
0.9
0.6
Typical thermal resistance
RJC
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
4.5
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-3PW
V60170PW-M3/4W
4W
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
32
28
24
20
16
12
8
30.0
25.0
20.0
15.0
10.0
5.0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
4
D = tp/T
tp
0
0.0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 04-Dec-13
Document Number: 89944
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V60170PW-M3
Vishay General Semiconductor
www.vishay.com
10 000
1000
100
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.1
0.1
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
1000
10
Junction to Case
100
10
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
1
0.1
0.01
0.001
0.0001
TA = 25 °C
0.1
20
40
60
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-3PW
Fig. 6 - Typical Transient Thermal Impedance Per Device
0.645 (16.38)
0.175 (4.45)
0.625 (15.87)
0.165 (4.19)
0.551 (14.00)
0.537 (13.64)
0.050 (1.27)
R0.155 (R3.94)
R0.145 (R3.68)
0.323 (8.20)
0.313 (7.95)
3° Ref.
30° Ref.
0.245 (6.23)
0.225 (5.72)
0.077 (1.96)
0.063 (1.60)
0.170 (4.32)
10° Typ.
Both Sides
0.840 (21.34)
0.820 (20.83)
0.467 (11.86)
0.079 (2.01)
0.453 (11.51)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.065 (1.65)
0.160 (4.06)
0.140 (3.56)
5° Ref.
Both Sides
3° Ref.
3° Ref.
0.090 (2.29)
0.080 (2.03)
0.098 (2.50)
0.083 (2.12)
0.565 (14.35)
0.545 (13.84)
0.131 (3.33)
0.121 (3.07)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
0.225 (5.72)
0.205 (5.21)
Revision: 04-Dec-13
Document Number: 89944
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
Document Number: 91000
1
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