V12P22-M3/I [VISHAY]
High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier;型号: | V12P22-M3/I |
厂家: | VISHAY |
描述: | High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier |
文件: | 总5页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
V12P22
Vishay General Semiconductor
www.vishay.com
High Current Density Surface-Mount
TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.60 V at IF = 6 A
FEATURES
• Very low profile - typical height of 1.1 mm
®
eSMP Series
Available
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMPC (TO-277A)
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
K
Anode 1
Anode 2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
LINKS TO ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
12 A
200 V
200 A
0.68 V
175 °C
VRRM
Base P/N-M3
-
halogen-free, RoHS-compliant, and
IFSM
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
VF at IF = 12 A (125 °C)
TJ max.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Package
SMPC (TO-277A)
Single
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12P22
V1222
200
UNIT
Device marking code
Maximum repetitive peak reverse voltage
VRRM
V
A
(1)
IF(AV)
12
Maximum DC forward current
(2)
IF(AV)
3.2
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +175
-55 to +175
°C
TSTG
Notes
(1)
(2)
(3)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
Free air, mounted on recommended pad area
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1RJA
Revision: 13-May-2020
Document Number: 87019
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P22
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.75
0.82
0.60
0.68
0.0006
1.5
MAX.
UNIT
IF = 6 A
-
0.9
-
TJ = 25 °C
IF = 12 A
IF = 6 A
(1)
Instantaneous forward voltage
VF
V
TJ = 125 °C
IF = 12 A
0.76
-
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = 160 V
-
(2)
Reverse current
IR
mA
pF
-
0.3
12
-
VR = 200 V
3
Typical junction capacitance
4.0 V, 1 MHz
CJ
720
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 5 ms
(2)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V12P22
UNIT
(1)(2)
RJA
80
4
Typical thermal resistance
°C/W
(3)
RJM
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1RJA
Free air, mounted on recommended copper pad area; thermal resistance RJA - junction-to-ambient
Mounted on 30 mm x 30 mm pad areas aluminum PCB, thermal resistance RJM - junction-to-mount
(2)
(3)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V12P22-M3/H
0.10
0.10
0.10
0.10
H
I
1500
6500
1500
6500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
V12P22-M3/I
V12P22HM3/H (1)
V12P22HM3/I (1)
H
I
Note
(1)
AEC-Q101 qualified
Revision: 13-May-2020
Document Number: 87019
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P22
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
Axis Title
RthJM = 4 °C/W
Axis Title
14
12
10
8
10000
1000
100
100
10
10000
1000
100
TM measured at cathode
terminal mount typical values
1
0.1
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
0.01
TJ = 125 °C
6
0.001
0.0001
0.00001
0.000001
4
RthJA = 80 °C/W
TJ = 25 °C
TJ = -40 °C
2
0
10
10
0
25
50
75
100 125 150 175
20
40
60
80
100
Mount Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
Axis Title
Axis Title
12.0
10000
10 000
1000
100
10000
1000
100
TJ = 25 °C
D = 0.8
f = 1.0 MHz
Vsig = 50 mVp-p
10.0
8.0
6.0
4.0
2.0
0
D = 0.5
D = 0.3
1000
100
10
D = 0.2
D = 1.0
T
D = 0.1
D = tp/T
tp
10
10
1000
0
2
4
6
8
10
12
14
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Axis Title
Axis Title
100
10
1
10000
1000
100
100
10
1
10000
1000
100
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
TJ = 125 °C
Junction to Ambient
TJ = 25 °C
TJ = -40 °C
0.1
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 13-May-2020
Document Number: 87019
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12P22
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPC (TO-277A)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
®
Conform to JEDEC TO-277A
Revision: 13-May-2020
Document Number: 87019
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
Document Number: 91000
1
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