UG18ACTHE3/45 [VISHAY]
DIODE ARRAY GP 50V 18A TO220AB;型号: | UG18ACTHE3/45 |
厂家: | VISHAY |
描述: | DIODE ARRAY GP 50V 18A TO220AB 局域网 功效 二极管 |
文件: | 总4页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Glass passivated pallet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
3
3
2
• High forward surge capability
2
1
1
UG18xCT Series
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
UGF18xCT Series
PIN 1
PIN 2
PIN 1
PIN 2
CASE
PIN 3
• Solder dip 275 °C max., 10 s per JESD 22-B106
(for TO-220AB and ITO-220AB package)
PIN 3
TO-263AB
K
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
TYPICAL APPLICATIONS
UGB18xCT Series
For use in high frequency rectifier of switching mode power
supplies, inverters, freewheeling diodes, DC/DC converters,
and other power switching application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-220AB, ITO-220AB, TO-263AB
IF(AV)
18 A
Molding compound meets UL 94V-0 flammability rating
VRRM
IFSM
50 V to 200 V
175 A
Base P/N-E3
-
RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
trr
20 ns
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
VF at IF
TJ max.
0.95 V
150 °C
meets JESD 201 class 2 whisker test
TO-220AB, ITO-220AB,
TO-263AB
Package
Polarity: As marked
Diode variations
Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
VRMS
UG18ACT UG18BCT UG18CCT UG18DCT
UNIT
Max. repetitive peak reverse voltage
Max. RMS voltage
50
35
50
100
70
150
105
150
200
140
200
V
V
V
A
Max. DC blocking voltage
VDC
100
Max. average forward rectified current at TC = 105 °C
IF(AV)
18
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
TJ, TSTG
VAC
175
A
°C
V
Operating junction and storage temperature range
-65 to +150
1500
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Revision: 24-Feb-15
Document Number: 88759
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
24
20
16
12
8
1000
100
10
Resistive or Inductive Load
TJ = 125 °C
TJ = 100 °C
1
TJ = 25 °C
0.1
4
0.01
0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
1000
100
10
60
150 A/µs
100 A/µs
IF = 9.0 A
VR = 30 V
TC = 105 °C
8.3 ms Single Half Sine-Wave
50
40
30
20
10
0
dI/dt =
20 A/µs
50 A/µs
100 A/µs
50 A/µs
150 A/µs
20 A/µs
trr
Qrr
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles at 60 Hz
Junction Temperature (°C)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode
Fig. 5 - Reverse Switching Characteristics Per Diode
100
100
TJ = 125 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
1
0.1
0.01
1.0
Instantaneous Forward Voltage (V)
1
10
100
0.4
0.6
0.8
1.2
1.4
1.6
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 24-Feb-15
Document Number: 88759
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
UG18xCT, UGF18xCT, UGB18xCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.404 (10.26)
0.384 (9.75)
0.415 (10.54) MAX.
0.076 (1.93) REF.
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
7° REF.
45° REF.
0.113 (2.87)
0.103 (2.62)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.145 (3.68)
0.135 (3.43)
7° REF.
0.580 (14.73)
PIN
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
1
2
3
7° REF.
0.191 (4.85)
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.21)
0.195 (4.95)
TO-263AB
Mounting Pad Layout
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
0.190 (4.83)
0.160 (4.06)
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.670 (17.02)
0.591 (15.00)
1
K
2
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) MIN.
0.037 (0.940)
0.027 (0.686)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
Revision: 24-Feb-15
Document Number: 88759
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关型号:
UG18BCT-E3/45
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
UG18BCT-HE3/45
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
UG18BCTHE3/45
DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
UG18DCT-HE3/45
DIODE 9 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明