UG18ACTHE3/45 [VISHAY]

DIODE ARRAY GP 50V 18A TO220AB;
UG18ACTHE3/45
型号: UG18ACTHE3/45
厂家: VISHAY    VISHAY
描述:

DIODE ARRAY GP 50V 18A TO220AB

局域网 功效 二极管
文件: 总4页 (文件大小:183K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
UG18xCT, UGF18xCT, UGB18xCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Plastic Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Glass passivated pallet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
3
3
2
• High forward surge capability  
2
1
1
UG18xCT Series  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
UGF18xCT Series  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
• Solder dip 275 °C max., 10 s per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
UGB18xCT Series  
For use in high frequency rectifier of switching mode power  
supplies, inverters, freewheeling diodes, DC/DC converters,  
and other power switching application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB, ITO-220AB, TO-263AB  
IF(AV)  
18 A  
Molding compound meets UL 94V-0 flammability rating  
VRRM  
IFSM  
50 V to 200 V  
175 A  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
trr  
20 ns  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF at IF  
TJ max.  
0.95 V  
150 °C  
meets JESD 201 class 2 whisker test  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Polarity: As marked  
Diode variations  
Common cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VRMS  
UG18ACT UG18BCT UG18CCT UG18DCT  
UNIT  
Max. repetitive peak reverse voltage  
Max. RMS voltage  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Max. DC blocking voltage  
VDC  
100  
Max. average forward rectified current at TC = 105 °C  
IF(AV)  
18  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
TJ, TSTG  
VAC  
175  
A
°C  
V
Operating junction and storage temperature range  
-65 to +150  
1500  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
Revision: 24-Feb-15  
Document Number: 88759  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
UG18xCT, UGF18xCT, UGB18xCT  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
24  
20  
16  
12  
8
1000  
100  
10  
Resistive or Inductive Load  
TJ = 125 °C  
TJ = 100 °C  
1
TJ = 25 °C  
0.1  
4
0.01  
0
0
20  
40  
60  
80  
100  
0
25  
50  
75  
100  
125  
150  
175  
Percent of Rated Peak Reverse Voltage (%)  
Case Temperature (°C)  
Fig. 1 - Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode  
1000  
100  
10  
60  
150 A/µs  
100 A/µs  
IF = 9.0 A  
VR = 30 V  
TC = 105 °C  
8.3 ms Single Half Sine-Wave  
50  
40  
30  
20  
10  
0
dI/dt =  
20 A/µs  
50 A/µs  
100 A/µs  
50 A/µs  
150 A/µs  
20 A/µs  
trr  
Qrr  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
Number of Cycles at 60 Hz  
Junction Temperature (°C)  
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Per Diode  
Fig. 5 - Reverse Switching Characteristics Per Diode  
100  
100  
TJ = 125 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
10  
TJ = 25 °C  
Pulse Width = 300 µs  
1 % Duty Cycle  
10  
1
0.1  
1
0.1  
0.01  
1.0  
Instantaneous Forward Voltage (V)  
1
10  
100  
0.4  
0.6  
0.8  
1.2  
1.4  
1.6  
Reverse Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Fig. 6 - Typical Junction Capacitance Per Diode  
Revision: 24-Feb-15  
Document Number: 88759  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
UG18xCT, UGF18xCT, UGB18xCT  
www.vishay.com  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.384 (9.75)  
0.415 (10.54) MAX.  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
7° REF.  
45° REF.  
0.113 (2.87)  
0.103 (2.62)  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.122 (3.08) DIA.  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
0.145 (3.68)  
0.135 (3.43)  
7° REF.  
0.580 (14.73)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
0.603 (15.32)  
0.573 (14.55)  
0.635 (16.13)  
0.625 (15.87)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.191 (4.85)  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.025 (0.64)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.020 (0.51)  
0.104 (2.65)  
0.096 (2.45)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-263AB  
Mounting Pad Layout  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
0.160 (4.06)  
0.42 (10.66) MIN.  
0.055 (1.40)  
0.045 (1.14)  
K
0.33 (8.38) MIN.  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.670 (17.02)  
0.591 (15.00)  
1
K
2
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15 (3.81) MIN.  
0.037 (0.940)  
0.027 (0.686)  
0.08 (2.032) MIN.  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
0.205 (5.20)  
0.195 (4.95)  
Revision: 24-Feb-15  
Document Number: 88759  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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