UG06B-E3/23 [VISHAY]
Rectifier Diode, 1 Element, 0.6A, 100V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, CASE MPGO6, 2 PIN;
| 型号： | UG06B-E3/23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.6A, 100V V(RRM), Silicon, ROHS COMPLIANT, MINIATURE, PLASTIC, CASE MPGO6, 2 PIN 二极管 |
| 文件： | 总4页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UG06A thru UG06D
Vishay General Semiconductor
Miniature Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Soft recovery characteristics
• Low forward voltage drop
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Case Style MPG06
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
0.6 A
50 V to 200 V
40 A
MECHANICAL DATA
Case: MPG06
15 ns
VF
0.95 V
Epoxy meets UL 94V-0 flammability rating
Tj max.
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
VRRM
VRMS
VDC
UG06A
UG06B
100
UG06C
150
UG06D
200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
V
V
V
A
35
70
105
140
Maximum DC blocking voltage
Maximum average forward rectified current (see Fig. 1)
50
100
150
200
IF(AV)
0.6
40
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous
forward voltage (1)
at IF = 0.6 A
VF
0.95
V
Maximum DC reverse current at
rated DC blocking voltage
T
A = 25 °C
5.0
100
IR
trr
µA
ns
TA = 100 °C
Maximum reverse recovery time
at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
15
Document Number 88757
17-May-06
www.vishay.com
1
UG06A thru UG06D
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
IF = 0.6 A, VR = 30 V, TJ = 25 °C
di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 °C
IF = 0.6 A, VR = 30 V, TJ = 25 °C
SYMBOL
VALUE
UNIT
25
35
Maximum reverse recovery time
trr
ns
8.0
20
Maximum stored charge
Qrr
CJ
nC
pF
di/dt = 50 A/µs, Irr = 10 % IRM TJ = 100 C
Typical junction capacitance
at 4 V, 1 MHz
9.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
UG06A
UG06B
UG06C
UG06D
UNITS
°C/W
RθJA
RθJL
97
28
Typical thermal resistance (1)
Note:
(1) Thermal resistance from junction to ambient and junction to lead at 0.375" (9.5 mm) lead length P.C.B. mounted with 0.2 x 0.2"
(5.0 x 5.0 mm) copper pads
ORDERING INFORMATION
PREFERRED P/N
UG06D-E3/54
UG06D-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
0.181
54
73
5500
3000
0.181
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
0.9
100
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
Lead Temperature
TJ = 75 °C
8.3 ms Single Half Sine-Wave
0.75
0.6
TL
0.45
0.3
10
TA, Ambient Temperature
P.C.B. Mounted
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pads
0.15
0
1
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles at 60 Hz
Temperature (°C)
Figure 1. Maximum Forward Current Derating Curves
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88757
17-May-06
UG06A thru UG06D
Vishay General Semiconductor
100
10
60
50
40
30
20
10
0
trr
Qrr
IF = 0.6 A
VR = 30 V
TJ = 100 °C
di/dt = 20 A/µs
di/dt = 50 A/µs
Pulse Width = 300 µs
1 % Duty Cycle
1
di/dt = 100 A/µs
di/dt = 150 A/µs
di/dt = 150 A/µs
di/dt = 100 A/µs
TJ = 25 °C
0.1
di/dt = 50 A/µs
di/dt = 20 A/µs
0.01
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Charateristics
100
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = 100 °C
10
1
10
TJ
= 25 °C
0.1
0.01
1
0
20
40
60
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style MPG06
1.0 (25.4)
MIN.
0.100 (2.54)
0.090 (2.29)
DIA
0.125 (3.18)
0.115 (2.92)
1.0 (25.4)
MIN.
0.025 (0.635)
0.023 (0.584)
DIA.
Document Number 88757
17-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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