UF1007 [VISHAY]
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2;
| 型号： | UF1007 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2 二极管 |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UF1001–UF1007
Vishay Lite–On Power Semiconductor
1.0A Ultra–Fast Rectifier
Features
Diffused junction
Ultra–fast switching for high efficiency
High current capability and low forward voltage
drop
Surge overload rating to 30A peak
Low reverse leakage current
Plastic material – UL Recognition flammability
classification 94V–0
94 9369
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
50
100
200
400
600
800
1000
30
Unit
V
V
V
V
V
V
V
A
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
UF1001
UF1002
UF1003
UF1004
UF1005
UF1006
UF1007
V
RRM
=V
RWM
=V
R
Peak forward surge current
I
FSM
Average forward current
T =55 C
A
I
1
A
FAV
Junction and storage temperature range
T =T
–65...+150
C
j
stg
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =1A
Type
UF1001–1003
UF1004
Symbol Min
Typ Max Unit
V
F
V
F
V
F
1
1.3
1.7
5
V
V
V
F
UF1005–1007
Reverse current
T =25 C
I
I
A
A
R
T =100 C
100
50
75
A
ns
ns
A
R
Reverse recovery time
Diode capacitance
I =1A, I =0.5A,
UF1001–1004
UF1005–1007
UF1001–1004
UF1005–1007
t
t
F
R
rr
I =0.25A
rr
rr
V =4V, f=1MHz
R
C
C
20
10
95
pF
pF
K/W
D
D
Thermal resistance
junction to ambient
R
thJA
Rev. A2, 24-Jun-98
1 (4)
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25 C unless otherwise specified)
30
1.00
8.3 ms Single Half–Sine–Wave
JEDEC method
0.75
0.50
0.25
0
20
10
0
Single phase half–wave
Resistive or Inductive load
0
25 50
75 100 125 150 175
1
10
100
15460
15458
Number of Cycles at 60 Hz
T
amb
– Ambient Temperature ( °C )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
20
100
T = 25°C
T = 25°C
j
j
10
I
F
Pulse Width = 300 µs
f = 1 MHz
UF1001–UF1004
UF1004
1.0
0.1
10
UF1001–UF1003
UF1005–UF1007
UF1005–UF1007
0.01
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
15459
V – Forward Voltage ( V )
F
15461
V
R
– Reverse Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Dimensions in mm
14443
Case: molded plastic
Polarity: cathode band
Approx. weight: 0.35 grams
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
UF1001–UF1007
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsand
forbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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