U5547NL
更新时间：2024-09-18 18:21:29
品牌：VISHAY
描述：Small Signal Field-Effect Transistor, N-Channel, Junction FET
概述
规格参数
数据手册U5547NL 概述
Small Signal Field-Effect Transistor, N-Channel, Junction FET 小信号场效应晶体管
U5547NL 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | , | Reach Compliance Code： | unknown |
| 风险等级： | 5.92 | FET 技术： | JUNCTION |
| JESD-609代码： | e0 | 最高工作温度： | 150 °C |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 0.5 W |
| 子类别： | FET General Purpose Small Signal | 表面贴装： | NO |
| 端子面层： | Tin/Lead (Sn/Pb) | Base Number Matches： | 1 |
U5547NL 数据手册
通过下载U5547NL数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载SST/U5545NL Series
New Product
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V) gfs Min (mS) IG Max (pA) jVGS1 - VGS2j Max (mV)
U5545NL
-0.5 to -4.5
-0.5 to -4.5
-0.5 to -4.5
-50
-50
-50
1.5
1.5
1.5
-50
-50
-50
5
SST/U5546NL
SST/U5547NL
10
15
FEATURES
BENEFITS
APPLICATIONS
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D External Substrate Bias—Avoids Latchup
D Wideband Differential Amps
D Tight Differential Match vs. Current
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D Improved Op Amp Speed, Settling Time
Accuracy
D High-Speed Comparators
D Low Offset/Drift Voltage
D Low Gate Leakage: 3 pA
D Low Noise
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Impedance Converters
D High CMRR: 100 dB
D Minimum Error with Large Input Signal
DESCRIPTION
The SST/U5545NL Series are monolithic dual n-channel
JFETs designed to provide high input impedance (IG < 50 pA)
for general purpose differential amplifiers. The U5545NL
features minimum system error and calibration (5-mV offset
maximum).
The SST5546NL/47NL in the SO-8 package provide ease of
manufacturing. The symmetrical pinout prevents improper
orientation.
These part number are available with
tape-and-reel options for compatibility with automatic
assembly methods.
Pins 4 and 8 on the SST series and pin 4 on the U series part
numbers enable the substrate to be connected to a positive,
external bias (VDD) to avoid latchup.
The hermetically sealed TO-78 package is available with full
military processing.
TO-78
S
G
2
1
Narrow Body SOIC
1
3
7
5
S
D
G
SUBSTRATE
1
2
3
4
8
7
6
5
1
1
1
D
1
D
2
G
2
2
6
D
2
SUBSTRATE
S
2
G
1
S
2
4
Top View
CASE, SUBSTRATE
Top View
U5545NL
U5546NL
U5547NL
Marking Codes:
SST5546NL - (5546NL)
SST5547NL - (5547NL)
ABSOLUTE MAXIMUM RATINGS
a
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dissipation :
Notes
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
a. Derate 2 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
Document Number: 72119
S-03162—Rev. A, 14-Feb-03
www.vishay.com
7-1
SST/U5545NL Series
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
U5545NL
SST/U5546NL SST/U5547NL
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
= -1 mA, V = 0 V
-57
-2
-50
-50
-50
(BR)GSS
G
DS
V
Gate-Source
Cutoff Voltage
V
V
= 15 V, I = 0.5 nA
-0.5
0.5
-4.5
-0.5
0.5
-4.5
-0.5
0.5
-4.5
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
3
8
8
8
mA
pA
nA
pA
DSS
DS
GS
V
= -30 V, V = 0 V
-10
-20
-3
-100
-150
-50
-100
-150
-50
-100
-150
-50
GS
DS
Gate Reverse Current
Gate Operating Current
I
GSS
T
= 150_C
A
I
G
V
= 15 V, I = 200 mA
DG D
Gate-Source
Forward Voltage
V
I
G
= 1 mA , V = 0 V
0.7
V
GS(F)
DS
Dynamic
Common-Source Forward
Transconductance
g
2.5
2
1.5
6.0
25
6
1.5
6.0
25
6
1.5
6.0
25
6
mS
fs
b
V
V
= 15 V, V = 0 V
GS
f = 1 kHz
DS
DS
Common-Source
Output Conductance
g
mS
os
iss
rss
b
Common-Source
Input Capacitance
C
3.5
1.3
= 15 V, V = 0 V
GS
f = 1 MHz
pF
Common-Source Reverse
Transfer Capacitance
C
2
2
2
Equivalent Input
Noise Voltage
V
= 15 V, I = 200 mA
f = 10 Hz
nV⁄
DS
D
e
20
180
3.5
n
√Hz
Noise Figure
NF
R
G
= 1 MW
0.1
dB
Matching
V
= 15 V, I = 50 mA
5
5
10
10
15
15
DG
D
Differential
Gate-Source Voltage
|
V
|
GS2
* V
mV
GS1
V
= 15 V, I = 200 mA
D
DG
Gate-Source Voltage
Differential Change
with Temperature
|
|
D V
– V
GS2
DT
V
= 15 V, I = 200 mA
mV/
_C
DG
T
D
GS1
10
1
20
1
40
1
= -55 to 125_C
A
I
Saturation Drain
DSS1
c
V
= 15 V, V = 0 V
0.98
0.95
0.97
0.9
0.9
0.9
DS
GS
c
Current Ratio
I
DSS2
g
V
= 15 V, I = 200 mA
fs1
DS
D
c
c
Transconductance Ratio
0.99
1
0.95
1
1
g
f = 1 kHz
fs2
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NQP
c. Assumes smaller value in the numerator.
Document Number: 72119
S-03162—Rev. A, 14-Feb-03
www.vishay.com
7-2
SST/U5545NL Series
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
3
100 nA
10 nA
1 nA
5
4
IG @ I = 200 mA
D
2.6
2.2
1.8
IDSS
T
A
= 125_C
g
fs
3
2
1
0
IGSS @ 125_C
50 mA
100 pA
50 mA
200 mA
10 pA
1 pA
IGSS @ 25_C
T
A
= 25_C
IDSS @ VDS = 15 V, VGS = 0 V
@ VDG = 15 V, VGS = 0 V
f = 1 kHz
1.4
1
g
fs
0.1 pA
0
-1
-2
-3
-4
-5
0
0
0
10
20
30
40
50
VGS(off) - Gate-Source Cutoff Voltage (V)
Output Characteristics
VGS(off) = -2 V
VDG - Drain-Gate Voltage (V)
Output Characteristics
5
5
VGS(off) = -3 V
VGS = 0 V
-0.3 V
4
3
2
1
0
4
3
2
1
0
-0.6 V
VGS = 0 V
-0.9 V
-1.2 V
-1.5 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.8 V
-2.1 V
-1.0 V
-1.2 V
-1.4 V
-2.4 V
16 20
0
4
8
12
16
20
4
8
12
VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2
2.5
VGS = 0 V
VGS(off) = -2 V
VGS(off) = -3 V
-0.3 V
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
1.6
1.2
0.8
0.4
0
2.0
1.5
1.0
0.5
0
-0.6 V
-0.9 V
-1.2 V
-1.5 V
-1.8 V
-1.2 V
-1.4 V
-2.1 V
-2.4 V
-1.6 V
0
0.2
0.4
0.6
0.8
1
0.2
0.4
0.6
0.8
1
VDS - Drain-Source Voltage (V)
VDS - Drain-Source Voltage (V)
Document Number: 72119
S-03162—Rev. A, 14-Feb-03
www.vishay.com
7-3
SST/U5545NL Series
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Gate-Source Differential Voltage
vs. Drain Current
Transfer Characteristics
5
100
10
1
VDG = 15 V
VGS(off) = -2 V
VDS = 10 V
T
= 25_C
A
4
T
A
= -55_C
3
2
SST/U5547NL
25_C
U5545NL
125_C
1
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.01
0.1
1
VGS - Gate-Source Voltage (V)
ID - Drain Current (mA)
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
100
130
120
110
VDG = 15 V
DVDG
DT = 25 to 125_C
A
CMRR = 20 log
DT = -55 to 25_C
A
D
V
V
GS2
-
GS1
SST/U5547NL
U5545NL
10
DVDG = 10 - 20 V
100
90
5 - 10 V
80
1
0.01
0.1
1
0.01
0.1
1
ID - Drain Current (mA)
ID - Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
100
1 k
80
60
40
800
600
400
VGS(off) = -3 V
VGS(off) = -2 V
VGS(off) = -3 V
VGS(off) = -2 V
g
R
L
fs
A
+
V
1 ) R g
os
L
Assume V = 15 V, V = 5 V
DD
DS
20
0
200
0
10 V
+
R
L
I
D
0.01
0.1
1
0.01
0.1
1
ID - Drain Current (mA)
ID - Drain Current (mA)
Document Number: 72119
S-03162—Rev. A, 14-Feb-03
www.vishay.com
7-4
SST/U5545NL Series
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
5
f = 1 MHz
f = 1 MHz
8
6
4
2
0
4
3
2
1
0
VDS = 0 V
5 V
VDS = 0 V
5 V
15 V
15 V
0
-4
-8
-12
-16
-20
0
-4
-8
-12
-16
-20
VGS - Gate-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
2.5
2.0
1.5
1.0
0.5
0
VGS(off) = -2 V
VDS = 15 V
f = 1 kHz
VDS = 10 V
ID @ 200 mA
12
8
T
A
= -55_C
VGS = 0 V
25_C
4
0
125_C
10
100
1 k
10 k
100 k
0.01
0.1
1
f - Frequency (Hz)
ID - Drain Current (mA)
Common-Source Forward Transconductance
vs. Drain Current
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
2.5
2.0
1.5
1.0
1 k
10
VGS(off) = -2 V
VDS = 15 V
f = 1 kHz
g
os
800
8
6
T
A
= -55_C
600
400
25_C
4
2
0
rDS
200
0
0.5
0
125_C
rDS @ ID = 100 mA, VGS = 0 V
g
os
@ VDS = 15 V, VGS = 0 V, f = 1 kHz
-1
-2
-3
-4
-5
0.01
0.1
ID - Drain Current (mA)
1
0
VGS(off) - Gate-Source Cutoff Voltage (V)
Document Number: 72119
S-03162—Rev. A, 14-Feb-03
www.vishay.com
7-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
U5547NL 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| U5547NL-E3 | VISHAY | Small Signal Field-Effect Transistor, N-Channel, Junction FET | 获取价格 |
|
| U5634 | MERCURY | Duplexer, | 获取价格 |
|
| U5714 | MERCURY | Duplexer, | 获取价格 |
|
| U572(BAGGEDIN10S) | ETC | DRUCKTASTER KNOPF 4X6.5 SCHWARZ | 获取价格 |
|
| U573(BAGGEDIN10S) | ETC | DRUCKTASTER KNOPF 4X6.5 GRUEN | 获取价格 |
|
| U576(BAGGEDIN10S) | ETC | DRUCKTASTER KNOPF 4X6.5 ROT | 获取价格 |
|
| U584 U585 U587 | UTC | 8.0A(Io) Low Dropout Positive Fixed & A... | 获取价格 |
|
| U5920 | MERCURY | Duplexer, | 获取价格 |
|
| U5A2CI | KEC | ULTRA FAST RECOVERY RECTIFIER DIODE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER) | 获取价格 |
|
| U5A2CIC | KEC | ULTRA FAST RECOVERY RECTIFIER DIODE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER) | 获取价格 |
|
U5547NL 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
