TSOP2238QJ1 [VISHAY]

IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统
TSOP2238QJ1
型号: TSOP2238QJ1
厂家: VISHAY    VISHAY
描述:

IR Receiver Modules for Remote Control Systems
红外接收器模块的远程控制系统

远程控制
文件: 总7页 (文件大小:230K)
中文:  中文翻译
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TSOP22..QJ1  
Vishay Semiconductors  
IR Receiver Modules for Remote Control Systems  
Description  
The TSOP22..QJ1 - series are miniaturized receivers  
for infrared remote control systems. PIN diode and  
preamplifier are assembled on lead frame, the epoxy  
package is designed as IR filter.  
The demodulated output signal can directly be  
decoded by a microprocessor. TSOP22..QJ1 is the  
standard IR remote control receiver series, support-  
ing all major transmission codes.  
1
16652  
2
3
Features  
Special Features  
• Photo detector and preamplifier in one  
package  
• Improved immunity against ambient light  
• Suitable burst length 10 cycles/burst  
• Internal filter for PCM frequency  
e3  
• Improved shielding against electrical  
Parts Table  
field  
disturbance  
Part  
Carrier Frequency  
30 kHz  
TSOP2230QJ1  
• TTL and CMOS compatibility  
• Output active low  
• Low power consumption  
TSOP2233QJ1  
TSOP2236QJ1  
TSOP2237QJ1  
TSOP2238QJ1  
TSOP2240QJ1  
TSOP2256QJ1  
33 kHz  
36 kHz  
36.7 kHz  
38 kHz  
40 kHz  
56 kHz  
Block Diagram  
Application Circuit  
16835  
2
V
S
30 k  
16842  
R1 = 100  
1
Transmitter  
TSOPxxxx  
with  
VS  
+VS  
OUT  
Band Demo-  
dulator  
C1  
=
TSALxxxx  
Input  
AGC  
4.7 µF  
Pass  
µC  
3
OUT  
GND  
VO  
GND  
PIN  
GND  
Control  
Circuit  
R1 + C1 recommended to suppress power supply  
disturbances.  
The output voltage should not be hold continuously at  
=
a voltage below VO 3.3 V by the external circuit.  
Document Number 82206  
Rev. 1.1, 31-Jan-05  
www.vishay.com  
1
TSOP22..QJ1  
Vishay Semiconductors  
Absolute Maximum Ratings  
Absolute Maximum Ratings  
T
amb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VS  
Value  
Unit  
V
Supply Voltage  
(Pin 2)  
- 0.3 to  
+ 6.0  
Supply Current  
Output Voltage  
(Pin 2)  
(Pin 1)  
IS  
5
mA  
V
VO  
- 0.3 to  
+ 6.0  
Output Current  
(Pin 1)  
IO  
Tj  
5
100  
mA  
°C  
Junction Temperature  
Storage Temperature Range  
Operating Temperature Range  
Power Consumption  
Tstg  
Tamb  
Ptot  
Tsd  
- 25 to + 85  
- 25 to + 85  
50  
°C  
°C  
(Tamb 85 °C)  
mW  
°C  
Soldering Temperature  
t 5 s, 1 mm from case  
260  
Electrical and Optical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
VS = 5 V, Ev = 0  
S = 5 V, Ev = 40 klx, sunlight  
Symbol  
Min  
0.8  
Typ.  
1.2  
Max  
1.5  
Unit  
mA  
Supply Current (Pin 2)  
ISD  
ISH  
VS  
d
V
1.5  
mA  
V
Supply Voltage (Pin 2)  
Transmission Distance  
4.5  
5.5  
Ev = 0, test signal see fig.1,  
IR diode TSAL6200, IF = 250  
mA  
35  
m
Output Voltage Low (Pin 1)  
VOL  
250  
0.4  
mV  
I
OL = 0.5 mA, Ee = 0.7 mW/m2,  
f = fo, test signal see fig. 1  
mW/m2  
mW/m2  
Minimum Irradiance (30 - 40  
kHz)  
Pulse width tolerance:  
t
Ee min  
0.2  
0.3  
pi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig.1  
Minimum Irradiance (56 kHz)  
Pulse width tolerance:  
t
Ee min  
0.5  
pi -5/fo < tpo < tpi +6/fo,  
test signal see fig.1  
tpi - 5/fo < tpo < tpi + 6/fo,  
test signal see fig. 1  
W/m2  
deg  
Maximum Irradiance  
Directivity  
Ee max  
30  
Angle of half transmission  
distance  
ϕ1/2  
45  
www.vishay.com  
2
Document Number 82206  
Rev. 1.1, 31-Jan-05  
TSOP22..QJ1  
Vishay Semiconductors  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
Optical Test Signal  
(IR diode TSAL6200, I = 0.4 A, 30 pulses, f = f , T = 10 ms)  
E
e
F
0
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Ton  
Toff  
t
t
pi  
*
T
* t w 10/fo is recommended for optimal function  
pi  
16110  
Output Signal  
V
V
O
1 )  
2 )  
l = 950 nm,  
optical test signal, fig.3  
7/f < t < 15/f  
0
0
d
OH  
t –5/f < t < t +6/f  
pi  
0
po  
pi  
0
V
OL  
0.1  
1.0  
10.0 100.0 1000.010000.0  
2
2 )  
1 )  
t
t
po  
t
d
16909  
E – Irradiance ( mW/m )  
e
Figure 1. Output Function  
Figure 4. Output Pulse Diagram  
1.2  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Output Pulse  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Input Burst Duration  
f = f "5%  
0
l = 950 nm,  
optical test signal, fig.1  
Df ( 3dB ) = f /10  
0
0.7  
0.9  
1.1  
1.3  
0.1  
1.0  
10.0 100.0 1000.010000.0  
2
16925  
f/f – Relative Frequency  
0
16908  
E – Irradiance ( mW/m )  
e
Figure 2. Pulse Length and Sensitivity in Dark Ambient  
Figure 5. Frequency Dependence of Responsivity  
Optical Test Signal  
E
e
4.0  
Correlation with ambient light sources:  
3.5  
2
10W/m ^1.4klx (Std.illum.A,T=2855K)  
2
10W/m ^8.2klx (Daylight,T=5900K)  
3.0  
t
600 ms  
600 ms  
2.5  
2.0  
T = 60 ms  
Output Signal, ( see Fig.4 )  
1.5  
94 8134  
Ambient, l = 950 nm  
V
V
O
1.0  
0.5  
0.0  
OH  
OL  
V
0.01  
0.10  
1.00  
10.00  
100.00  
t
T
on  
T
off  
2
16911  
E – Ambient DC Irradiance (W/m )  
Figure 3. Output Function  
Figure 6. Sensitivity in Bright Ambient  
Document Number 82206  
Rev. 1.1, 31-Jan-05  
www.vishay.com  
3
TSOP22..QJ1  
Vishay Semiconductors  
2.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Sensitivity in dark ambient  
f = f  
o
1.5  
1.0  
0.5  
0.0  
f = 10 kHz  
f = 1 kHz  
f = 100 Hz  
0.1  
DV  
1.0  
10.0  
100.0  
1000.0  
–30 –15  
0
15 30 45 60 75 90  
16912  
– AC Voltage on DC Supply Voltage (mV)  
16918  
T
amb  
– Ambient Temperature ( qC )  
sRMS  
Figure 7. Sensitivity vs. Supply Voltage Disturbances  
Figure 10. Sensitivity vs. Ambient Temperature  
1.2  
2.0  
f(E) = f  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
2.0  
E – Field Strength of Disturbance ( kV/m )  
0.0  
0.4  
0.8  
1.2  
1.6  
750  
850  
950  
1050  
1150  
94 8147  
16919  
λ - Wavelength ( nm )  
Figure 8. Sensitivity vs. Electric Field Disturbances  
Figure 11. Relative Spectral Sensitivity vs. Wavelength  
0q  
10q  
20q  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
2
30q  
40q  
1.0  
0.9  
0.8  
50q  
60q  
0.2  
0.1  
0.0  
f = 38 kHz, E = 2 mW/m  
e
70q  
80q  
0.7  
0.6  
0
20  
40  
60  
80  
100 120  
0.6  
0.4  
0.2  
0
0.2  
0.4  
16913  
d
– Relative Transmission Distance  
Burst Length ( number of cycles / burst )  
96 12223p2  
rel  
Figure 9. Max. Envelope Duty Cycle vs. Burstlength  
Figure 12. Directivity  
www.vishay.com  
4
Document Number 82206  
Rev. 1.1, 31-Jan-05  
TSOP22..QJ1  
Vishay Semiconductors  
Suitable Data Format  
The circuit of the TSOP22..QJ1 is designed in that  
way that unexpected output pulses due to noise or  
disturbance signals are avoided. A bandpass filter, an  
integrator stage and an automatic gain control are  
used to suppress such disturbances.  
The distinguishing mark between data signal and dis-  
turbance signal are carrier frequency, burst length  
and duty cycle.  
IR Signal from fluorescent  
lamp with low modulation  
The data signal should fulfill the following conditions:  
• Carrier frequency should be close to center fre-  
quency of the bandpass (e.g. 38 kHz).  
0
5
10  
15  
20  
• Burst length should be 10 cycles/burst or longer.  
16920  
Time ( ms )  
• After each burst which is between 10 cycles and 70  
cycles a gap time of at least 14 cycles is necessary.  
Figure 13. IR Signal from Fluorescent Lamp with low Modulation  
• For each burst which is longer than 1.0 ms a corre-  
sponding gap time is necessary at some time in the  
data stream. This gap time should be at least 4 times  
longer than the burst.  
• Up to 800 short bursts per second can be received  
continuously.  
IR Signal from fluorescent  
lamp with high modulation  
Some examples for suitable data format are: NEC  
Code (repetitive pulse), NEC Code (repetitive data),  
Toshiba Micom Format, Sharp Code, RC5 Code,  
RC6 Code, R-2000 Code, Sony Code.  
When a disturbance signal is applied to the  
TSOP22..QJ1 it can still receive the data signal. How-  
ever the sensitivity is reduced to that level that no  
unexpected pulses will occur.  
0
5
10  
15  
20  
16921  
Time ( ms )  
Some examples for such disturbance signals which  
are suppressed by the TSOP22..QJ1 are:  
Figure 14. IR Signal from Fluorescent Lamp with high Modulation  
• DC light (e.g. from tungsten bulb or sunlight)  
• Continuous signal at 38 kHz or at any other fre-  
quency  
• Signals from fluorescent lamps with electronic bal-  
last with high or low modulation  
( see Figure 13 or Figure 14 ).  
Document Number 82206  
Rev. 1.1, 31-Jan-05  
www.vishay.com  
5
TSOP22..QJ1  
Vishay Semiconductors  
Package Dimensions in mm  
15841  
www.vishay.com  
6
Document Number 82206  
Rev. 1.1, 31-Jan-05  
TSOP22..QJ1  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 82206  
Rev. 1.1, 31-Jan-05  
www.vishay.com  
7

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