TSOP1340SB1 [VISHAY]
IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统型号: | TSOP1340SB1 |
厂家: | VISHAY |
描述: | IR Receiver Modules for Remote Control Systems |
文件: | 总7页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TSOP13..SB1
Vishay Semiconductors
VISHAY
IR Receiver Modules for Remote Control Systems
Description
The TSOP13..SB1- series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
96 12581
Features
Parts Table
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
Part
TSOP1330SB1
TSOP1333SB1
TSOP1336SB1
TSOP1337SB1
TSOP1338SB1
TSOP1340SB1
TSOP1356SB1
Carrier Frequency
• Improved shielding against electrical field distur-
bance
30 kHz
33 kHz
36 kHz
• TTL and CMOS compatibility
• Output active low
36.7 kHz
38 kHz
40 kHz
56 kHz
• Low power consumption
• No occurrence of disturbance pulses at the output
Special Features
• Suitable burst length ≥6 cycles/burst
• Enhanced immunity against all kinds of distur-
bance light
Application Circuit
R1 = 100 Ω
• Improved immunity against EMI from TV picture
tube
Transmitter
TSOPxxxx
with
VS
+VS
C1
=
TSALxxxx
4.7 µF
µC
Block Diagram
OUT
GND
VO
GND
2
VS
R1 + C1 recommended to suppress power supply
disturbances.
25 kΩ
3
OUT
The output voltage should not be hold continuously at
a voltage below VO 3.3 V by the external circuit.
Band Demo-
=
Input
AGC
dulator
Pass
1
PIN
GND
Control
Circuit
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
1
TSOP13..SB1
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VS
Value
Unit
Supply Voltage
(Pin 2)
- 0.3 to +
6.0
V
Supply Current
Output Voltage
(Pin 2)
(Pin 3)
IS
5
mA
V
VO
- 0.3 to +
6.0
Output Current
(Pin 3)
IO
Tj
5
100
mA
°C
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Tstg
Tamb
Ptot
Tsd
- 25 to + 85
- 25 to + 85
50
°C
°C
(Tamb ≤ 85 °C)
mW
°C
Soldering Temperature
t ≤ 10 s, 1 mm from case
260
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
VS = 5 V, Ev = 0
Symbol
ISD
Min
0.8
Typ.
1.2
Max
1.5
Unit
Supply Current (Pin 2)
mA
mA
V
VS = 5 V, Ev = 40 klx, sunlight
ISH
VS
d
1.5
Supply Voltage (Pin 2)
Transmission Distance
4.5
5.5
Ev = 0, test signal see fig.3, IR
diode TSAL6200, IF = 0.4 A
35
m
IOSL = 0.5 mA, Ee = 0.7 mW/m2, f
= fo, test signal see fig.1
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz)
VOSL
250
mV
mW/m2
mW/m2
mW/m2
mW/m2
W/m2
deg
Test signal see fig.1
Ee min
Ee min
Ee min
Ee min
Ee max
ϕ1/2
0.4
0.6
0.5
0.7
0.6
Test signal see fig.3
0.35
0.45
0.40
Irradiance (56 kHz)
Test signal see fig.1
Test signal see fig.3
Irradiance
Directivity
Test signal see fig.1
30
Angle of half transmission distance
45
Typical Characteristics (T
= 25°C unless otherwise specified)
amb
Optical Test Signal
E
e
(IR diode TSAL6200, I =0.4 A, N=6 pulses, f=f , T=10 ms)
F
0
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Pulse
t
t
*)
pi
T
*) t w 6/fo is recommended for optimal function
Output Signal
pi
Input Burst Duration
14337
V
V
= 950 nm,
optical test signal, fig.1
O
1 )
3/f < t < 9/f
0
0
d
2 )
t
– 4/f < t < t + 6/f
pi
0
po
pi
0
OH
OL
0.1
1.0
10.0 100.0 1000.010000.0
2
V
1 )
2 )
t
t
d
t
po
16907
E – Irradiance ( mW/m )
e
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
2
TSOP13..SB1
Vishay Semiconductors
VISHAY
Optical Test Signal
E
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Correlation with ambient light sources:
2
10W/m ^1.4klx (Std.illum.A,T=2855K)
2
10W/m ^8.2klx (Daylight,T=5900K)
t
600
s
600 s
T = 60 ms
Output Signal, ( see Fig.4 )
94 8134
Ambient, = 950 nm
V
O
V
OH
V
OL
0.01
0.10
1.00
10.00
100.00
t
T
on
T
off
2
16911
E – Ambient DC Irradiance (W/m )
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
2.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
f = f
o
Ton
Toff
1.5
1.0
0.5
0.0
f = 10 kHz
f = 1 kHz
= 950 nm,
optical test signal, fig.3
f = 100 Hz
0.1
1.0
10.0 100.0 1000.010000.0
2
0.1
1.0
10.0
100.0
1000.0
16912
16910
E
e
– Irradiance ( mW/m
)
V
sRMS
– AC Voltage on DC Supply Voltage (mV)
Figure 4. Output Pulse Diagram
Figure 7. Sensitivity vs. Supply Voltage Disturbances
1.2
2.0
1.0
0.8
0.6
0.4
0.2
0.0
f(E) = f
0
1.6
1.2
0.8
f = f "5%
0
0.4
0.0
f ( 3dB ) = f /10
0
2.0
E – Field Strength of Disturbance ( kV/m )
0.0
0.4
0.8
1.2
1.6
0.7
0.9
1.1
1.3
16925
f/f – Relative Frequency
0
94 8147
Figure 5. Frequency Dependence of Responsivity
Figure 8. Sensitivity vs. Electric Field Disturbances
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
3
TSOP13..SB1
Vishay Semiconductors
VISHAY
0q
10q
20q
0.7
0.6
0.5
0.4
0.3
0.2
30q
40q
1.0
0.9
0.8
50q
60q
70q
80q
0.7
2
0.1
0.0
f = 38 kHz, E = 2 mW/m
e
0.6
0
20
40
60
80
100 120
0.6
0.4
0.2
0
0.2
0.4
16916
d
– Relative Transmission Distance
rel
Burst Length ( number of cycles / burst )
95 11340p2
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Horizontal Directivity ϕx
0q
10q
20q
0.6
30q
40q
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
50q
60q
70q
80q
0.7
0.6
–30 –15
0
15 30 45 60 75 90
0.6
0.4
0.2
0
0.2
0.4
d
– Relative Transmission Distance
16918
T
amb
– Ambient Temperature ( qC )
95 11339p2
rel
Figure 10. Sensitivity vs. Ambient Temperature
Figure 13. Vertical Directivity ϕy
Suitable Data Format
1.2
The circuit of the TSOP13..SB1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
1.0
0.8
0.6
0.4
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
0.2
0
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
1150
750
850
950
1050
– Wavelength ( nm )
94 8408
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 40
cycles a gap time of at least 12 cycles is necessary.
Figure 11. Relative Spectral Sensitivity vs. Wavelength
• For each burst which is longer than 1.0 ms a corre-
sponding gap time is necessary at some time in the
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
4
TSOP13..SB1
Vishay Semiconductors
VISHAY
data stream. This gap time should be at least 6 times
longer than the burst.
• Up to 1000 short bursts per second can be received
continuously.
IR Signal from fluorescent
lamp with high modulation
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, R-2000 Code, RECS-80 Code.
When a disturbance signal is applied to the
TSOP13..SB1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP13..SB1 are:
0
5
10
15
20
16921
Time ( ms )
• DC light (e.g. from tungsten bulb or sunlight)
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation ( see Figure 14 or Fig-
ure 15 ).
IR Signal from fluorescent
lamp with low modulation
0
5
10
15
20
16920
Time ( ms )
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
5
TSOP13..SB1
Vishay Semiconductors
VISHAY
Package Dimensions in mm
96 12225
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
6
TSOP13..SB1
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82026
Rev. 6, 15-Oct-2002
www.vishay.com
7
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