TSOP1340SB1 [VISHAY]

IR Receiver Modules for Remote Control Systems; 红外接收器模块的远程控制系统
TSOP1340SB1
型号: TSOP1340SB1
厂家: VISHAY    VISHAY
描述:

IR Receiver Modules for Remote Control Systems
红外接收器模块的远程控制系统

光电 光电集成电路 远程控制
文件: 总7页 (文件大小:234K)
中文:  中文翻译
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TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
IR Receiver Modules for Remote Control Systems  
Description  
The TSOP13..SB1- series are miniaturized receivers  
for infrared remote control systems. PIN diode and  
preamplifier are assembled on lead frame, the epoxy  
package is designed as IR filter.  
The demodulated output signal can directly be  
decoded by a microprocessor. The main benefit is the  
reliable function even in disturbed ambient and the  
protection against uncontrolled output pulses.  
96 12581  
Features  
Parts Table  
• Photo detector and preamplifier in one package  
• Internal filter for PCM frequency  
Part  
TSOP1330SB1  
TSOP1333SB1  
TSOP1336SB1  
TSOP1337SB1  
TSOP1338SB1  
TSOP1340SB1  
TSOP1356SB1  
Carrier Frequency  
• Improved shielding against electrical field distur-  
bance  
30 kHz  
33 kHz  
36 kHz  
• TTL and CMOS compatibility  
• Output active low  
36.7 kHz  
38 kHz  
40 kHz  
56 kHz  
• Low power consumption  
• No occurrence of disturbance pulses at the output  
Special Features  
• Suitable burst length 6 cycles/burst  
• Enhanced immunity against all kinds of distur-  
bance light  
Application Circuit  
R1 = 100  
• Improved immunity against EMI from TV picture  
tube  
Transmitter  
TSOPxxxx  
with  
VS  
+VS  
C1  
=
TSALxxxx  
4.7 µF  
µC  
Block Diagram  
OUT  
GND  
VO  
GND  
2
VS  
R1 + C1 recommended to suppress power supply  
disturbances.  
25 k  
3
OUT  
The output voltage should not be hold continuously at  
a voltage below VO 3.3 V by the external circuit.  
Band Demo-  
=
Input  
AGC  
dulator  
Pass  
1
PIN  
GND  
Control  
Circuit  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
1
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VS  
Value  
Unit  
Supply Voltage  
(Pin 2)  
- 0.3 to +  
6.0  
V
Supply Current  
Output Voltage  
(Pin 2)  
(Pin 3)  
IS  
5
mA  
V
VO  
- 0.3 to +  
6.0  
Output Current  
(Pin 3)  
IO  
Tj  
5
100  
mA  
°C  
Junction Temperature  
Storage Temperature Range  
Operating Temperature Range  
Power Consumption  
Tstg  
Tamb  
Ptot  
Tsd  
- 25 to + 85  
- 25 to + 85  
50  
°C  
°C  
(Tamb 85 °C)  
mW  
°C  
Soldering Temperature  
t 10 s, 1 mm from case  
260  
Electrical and Optical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
VS = 5 V, Ev = 0  
Symbol  
ISD  
Min  
0.8  
Typ.  
1.2  
Max  
1.5  
Unit  
Supply Current (Pin 2)  
mA  
mA  
V
VS = 5 V, Ev = 40 klx, sunlight  
ISH  
VS  
d
1.5  
Supply Voltage (Pin 2)  
Transmission Distance  
4.5  
5.5  
Ev = 0, test signal see fig.3, IR  
diode TSAL6200, IF = 0.4 A  
35  
m
IOSL = 0.5 mA, Ee = 0.7 mW/m2, f  
= fo, test signal see fig.1  
Output Voltage Low (Pin 3)  
Irradiance (30 - 40 kHz)  
VOSL  
250  
mV  
mW/m2  
mW/m2  
mW/m2  
mW/m2  
W/m2  
deg  
Test signal see fig.1  
Ee min  
Ee min  
Ee min  
Ee min  
Ee max  
ϕ1/2  
0.4  
0.6  
0.5  
0.7  
0.6  
Test signal see fig.3  
0.35  
0.45  
0.40  
Irradiance (56 kHz)  
Test signal see fig.1  
Test signal see fig.3  
Irradiance  
Directivity  
Test signal see fig.1  
30  
Angle of half transmission distance  
45  
Typical Characteristics (T  
= 25°C unless otherwise specified)  
amb  
Optical Test Signal  
E
e
(IR diode TSAL6200, I =0.4 A, N=6 pulses, f=f , T=10 ms)  
F
0
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
Output Pulse  
t
t
*)  
pi  
T
*) t w 6/fo is recommended for optimal function  
Output Signal  
pi  
Input Burst Duration  
14337  
V
V
= 950 nm,  
optical test signal, fig.1  
O
1 )  
3/f < t < 9/f  
0
0
d
2 )  
t
– 4/f < t < t + 6/f  
pi  
0
po  
pi  
0
OH  
OL  
0.1  
1.0  
10.0 100.0 1000.010000.0  
2
V
1 )  
2 )  
t
t
d
t
po  
16907  
E – Irradiance ( mW/m )  
e
Figure 1. Output Function  
Figure 2. Pulse Length and Sensitivity in Dark Ambient  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
2
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
Optical Test Signal  
E
e
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Correlation with ambient light sources:  
2
10W/m ^1.4klx (Std.illum.A,T=2855K)  
2
10W/m ^8.2klx (Daylight,T=5900K)  
t
600  
s
600 s  
T = 60 ms  
Output Signal, ( see Fig.4 )  
94 8134  
Ambient, = 950 nm  
V
O
V
OH  
V
OL  
0.01  
0.10  
1.00  
10.00  
100.00  
t
T
on  
T
off  
2
16911  
E – Ambient DC Irradiance (W/m )  
Figure 3. Output Function  
Figure 6. Sensitivity in Bright Ambient  
2.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
f = f  
o
Ton  
Toff  
1.5  
1.0  
0.5  
0.0  
f = 10 kHz  
f = 1 kHz  
= 950 nm,  
optical test signal, fig.3  
f = 100 Hz  
0.1  
1.0  
10.0 100.0 1000.010000.0  
2
0.1  
1.0  
10.0  
100.0  
1000.0  
16912  
16910  
E
e
– Irradiance ( mW/m  
)
V
sRMS  
– AC Voltage on DC Supply Voltage (mV)  
Figure 4. Output Pulse Diagram  
Figure 7. Sensitivity vs. Supply Voltage Disturbances  
1.2  
2.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
f(E) = f  
0
1.6  
1.2  
0.8  
f = f "5%  
0
0.4  
0.0  
f ( 3dB ) = f /10  
0
2.0  
E – Field Strength of Disturbance ( kV/m )  
0.0  
0.4  
0.8  
1.2  
1.6  
0.7  
0.9  
1.1  
1.3  
16925  
f/f – Relative Frequency  
0
94 8147  
Figure 5. Frequency Dependence of Responsivity  
Figure 8. Sensitivity vs. Electric Field Disturbances  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
3
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
0q  
10q  
20q  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
30q  
40q  
1.0  
0.9  
0.8  
50q  
60q  
70q  
80q  
0.7  
2
0.1  
0.0  
f = 38 kHz, E = 2 mW/m  
e
0.6  
0
20  
40  
60  
80  
100 120  
0.6  
0.4  
0.2  
0
0.2  
0.4  
16916  
d
– Relative Transmission Distance  
rel  
Burst Length ( number of cycles / burst )  
95 11340p2  
Figure 9. Max. Envelope Duty Cycle vs. Burstlength  
Figure 12. Horizontal Directivity ϕx  
0q  
10q  
20q  
0.6  
30q  
40q  
Sensitivity in dark ambient  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
50q  
60q  
70q  
80q  
0.7  
0.6  
–30 –15  
0
15 30 45 60 75 90  
0.6  
0.4  
0.2  
0
0.2  
0.4  
d
– Relative Transmission Distance  
16918  
T
amb  
– Ambient Temperature ( qC )  
95 11339p2  
rel  
Figure 10. Sensitivity vs. Ambient Temperature  
Figure 13. Vertical Directivity ϕy  
Suitable Data Format  
1.2  
The circuit of the TSOP13..SB1 is designed in that  
way that unexpected output pulses due to noise or  
disturbance signals are avoided. A bandpassfilter, an  
integrator stage and an automatic gain control are  
used to suppress such disturbances.  
1.0  
0.8  
0.6  
0.4  
The distinguishing mark between data signal and dis-  
turbance signal are carrier frequency, burst length  
and duty cycle.  
0.2  
0
The data signal should fulfill the following conditions:  
• Carrier frequency should be close to center fre-  
quency of the bandpass (e.g. 38 kHz).  
1150  
750  
850  
950  
1050  
– Wavelength ( nm )  
94 8408  
• Burst length should be 6 cycles/burst or longer.  
• After each burst which is between 6 cycles and 40  
cycles a gap time of at least 12 cycles is necessary.  
Figure 11. Relative Spectral Sensitivity vs. Wavelength  
• For each burst which is longer than 1.0 ms a corre-  
sponding gap time is necessary at some time in the  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
4
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
data stream. This gap time should be at least 6 times  
longer than the burst.  
• Up to 1000 short bursts per second can be received  
continuously.  
IR Signal from fluorescent  
lamp with high modulation  
Some examples for suitable data format are: NEC  
Code, Toshiba Micom Format, Sharp Code, RC5  
Code, RC6 Code, R-2000 Code, RECS-80 Code.  
When a disturbance signal is applied to the  
TSOP13..SB1 it can still receive the data signal. How-  
ever the sensitivity is reduced to that level that no  
unexpected pulses will occure.  
Some examples for such disturbance signals which  
are suppressed by the TSOP13..SB1 are:  
0
5
10  
15  
20  
16921  
Time ( ms )  
• DC light (e.g. from tungsten bulb or sunlight)  
Figure 15. IR Signal from Fluorescent Lamp with high Modulation  
• Continuous signal at 38 kHz or at any other fre-  
quency  
• Signals from fluorescent lamps with electronic bal-  
last with high or low modulation ( see Figure 14 or Fig-  
ure 15 ).  
IR Signal from fluorescent  
lamp with low modulation  
0
5
10  
15  
20  
16920  
Time ( ms )  
Figure 14. IR Signal from Fluorescent Lamp with low Modulation  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
5
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm  
96 12225  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
6
TSOP13..SB1  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further  
notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 82026  
Rev. 6, 15-Oct-2002  
www.vishay.com  
7

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