TN0205AD [VISHAY]
N-Channel 20-V MOSFET; N沟道20V的MOSFET
| 型号： | TN0205AD |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V MOSFET |
| 文件： | 总4页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN0205A/AD
Vishay Siliconix
New Product
N-Channel 20-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (mA)
2.0 @ V = 4.5 V
250
150
GS
20
2.5 @ V = 2.5 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 2.0 Ω
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 35 ns
D 2.5-V or Lower Operation
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories
D Battery operated Systems
D Solid State Relay
D Load/Power Switching-Cell Phones, PDA
D Low Battery Voltage Operation
SOT-363
SC-70 (6-Leads)
SOT-323
SC-70 (3-Leads)
G
S
1
2
S
1
2
3
6
5
4
D
Marking Code:
1
1
1
TN0205A: Bl
TN0205AD: Dwl
3
D
G
G
2
w = Week Code
l = Lot Traceability
D
S
2
2
Order Number:
TN0205A
Order Number:
TN0205AD
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
TN0205A
TN0205AD
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
GS
V
V
"8
T
= 25_C
= 70_C
250
200
500
A
a
Continuous Drain Current (T = 150_C)
I
J
D
mA
T
A
Pulsed Drain Current
I
DM
T
= 25_C
= 70_C
0.15
0.10
0.20 (Total)
0.13 (Total)
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
TN0205A
TN0205AD
Unit
a
Thermal Resistance, Junction-to-Ambient
R
thJA
833
625 (Total)
_C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-1
TN0205A/AD
New Product
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 10 mA
20
24
(BR)DSS
DS
D
V
V
V
= V , I = 50 mA
0.4
0.9
1.5
GS(th)
DS
GS D
V
= 0 V, V = "8 V
GS
Gate-Body Leakage
I
"2
"100
DS
GSS
nA
mA
V
= 20 V, V = 0 V
0.001
100
5
DS
GS
Zero Gate Voltage Drain Current
I
DSS
V
= 20 V, V = 0 V, T = 55_C
DS
DS
GS
J
V
= 5.0 V, V = 2.5 V
120
400
160
800
GS
a
On-State Drain Current
I
mA
D(on)
V
= 8.0 V, V = 4.5 V
DS
GS
1.6
2.5
2.0
V
= 2.5 V, I = 150 mA
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 250 mA
1.2
200
0.7
GS
D
a
Forward Transconductance
g
fs
V
I
= 2.5 V, I = 50 mA
mS
V
DS
D
a
Diode Forward Voltage
V
= 50 mA, V = 0 V
1.2
SD
S
GS
Dynamic
Total Gate Charge
Q
350
25
100
20
14
5
450
g
Gate-Source Charge
Gate-Drain Charge
Q
Q
V
= 5.0 V, V = 4.5 V, I = 100 mA
pC
pF
gs
gd
iss
DS
V
GS
D
Input Capacitance
C
C
Output Capacitance
Reverse Transfer Capacitance
= 5.0 V, V = 0 V, f = 1 MHz
oss
DS
GS
C
rss
Switchingb, c
Turn-On Delay Time
Rise Time
t
t
7
25
19
9
12
35
30
15
d(on)
t
r
V
= 3.0 V, R = 100 W
L
= 4.5 V, R = 10 W
GEN G
DD
ns
I
D
= 0.25 A, V
Turn-Off Delay Time
Fall Time
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VNOJ
b. For design only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-2
TN0205A/AD
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Characteristics
Transfer Characteristics
1.25
1.00
0.75
0.50
0.25
0.00
0.8
0.6
0.4
0.2
0.0
4.0 V
VGS = 5 V
TJ = –55_C
25_C
3.5 V
3 V
2.5 V
125_C
2 V
1.5 V
1 V
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
50
40
30
20
10
0
Ciss
VGS = 2.5 V
C
C
oss
V
= 4.5 V
GS
rss
0
1
2
3
4
0
4
8
12
16
20
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
VDS = 6 V
VGS = 4.5 V
ID = 100 m A
I
D
= 100 mA
6
4
2
0
0
100
200
300
400
500
600
–50 –25
0
25
50
75
100 125 150
Qg – Total Gate Charge (pC)
TJ – Junction Temperature (_C)
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-3
TN0205A/AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
6
4
2
0
3
1
T
J
= 125_C
0.1
I
D
= 250 mA
T
J
= 25_C
0.01
T
J
= –55_C
0.001
0
2
4
6
8
10
0.00
0.3
0.6
0.9
1.2
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Threshold Voltage
0.2
0.1
I
D
= 50 mA
–0.0
–0.1
–0.2
–0.3
–0.4
–50 –25
0
25
50
75
100 125 150
T – Junction Temperature (_C)
J
Document Number: 70868
S-04279—Rev. B, 16-Jul-01
www.vishay.com
11-4
相关型号：
TN0205AD-T1-E3
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-70, 6 PIN
VISHAY
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