TCST2000 [VISHAY]
Transmissive Optical Sensor without Aperture; 没有光圈透射光学传感器
| 型号： | TCST2000 |
| 厂家： | 
VISHAY |
| 描述： | Transmissive Optical Sensor without Aperture |
| 文件： | 总8页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TCST1000/ TCST2000
Vishay Telefunken
Transmissive Optical Sensor without Aperture
Description
This device has a compact construction where the
emitting-light sources and the detectors are located
face-to-face on the same optical axis.
The operating wavelength is 950 nm. The detector
consists of a phototransistor.
B)
A)
Applications
Contactless optoelectronic switch,
control and counter
15134
95 10795
Features
+
A
C
E
Compact construction
No setting efforts
2 case variations
+
C
Polycarbonate case protected against
ambient light
5.50
0.22”
Current Transfer Ratio (CTR) of typical 2.5%
Top view
Order Instruction
Ordering Code
Resolution (mm) / Aperture (mm)
Remarks
No mounting flags
With two mounting flags
A)
TCST1000
0.6
0.6
/
/
non
non
B)
TCST2000
Document Number 83762
Rev. A3, 08–Jun–99
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1 (8)
TCST1000/ TCST2000
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Test Conditions
Symbol
Value
6
60
3
100
100
Unit
V
mA
A
mW
C
V
R
I
F
t ≤ 10 s
T
amb
I
p
FSM
≤ 25 C
P
V
Junction temperature
T
j
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Test Conditions
Symbol
Value
70
7
100
200
150
100
Unit
V
V
mA
mA
mW
C
V
V
CEO
ECO
I
C
t /T = 0.5, t ≤ 10 ms
I
p
p
CM
T
amb
≤ 25 C
P
V
T
j
Junction temperature
Coupler
Parameter
Test Conditions
≤ 25 C
Symbol
P
tot
Value
250
–55 to +85
–55 to +100
260
Unit
mW
C
C
C
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
T
amb
T
amb
T
stg
2 mm from case, t ≤ 5 s
T
sd
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
I = 60 mA
V = 0, f = 1 MHz
R
Symbol
Min.
Typ.
1.25
50
Max.
1.5
Unit
V
pF
V
F
F
C
j
Output (Detector)
Parameter
Test Conditions
I = 1 mA
I = 10 A
Symbol
Min.
70
7
Typ.
Max.
100
Unit
V
V
Collector emitter voltage
Emitter collector voltage
Collector dark current
V
V
C
CEO
ECO
CEO
E
V
CE
= 25 V, I = 0, E = 0
I
nA
F
Coupler
Parameter
Collector current
Collector emitter saturation
voltage
Test Conditions
Symbol
I
C
V
CEsat
Min.
0.25
Typ.
0.5
Max.
0.4
Unit
mA
V
V
= 5 V, I = 20 mA
CE
F
I = 20 mA, I = 25 A
F
C
Resolution, path of the
shutter crossing the radiant
sensitive zone
I
= 10/90%
0.6
mm
Crel
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2 (8)
Document Number 83762
Rev. A3, 08–Jun–99
TCST1000/ TCST2000
Vishay Telefunken
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Test Conditions
Symbol
Typ.
15.0
10.0
Unit
s
s
V = 5 V, I = 1 mA, R = 100 (see figure 1)
t
on
t
off
S
C
L
+ 5 V
I
I
F
96 11698
F
I
0
F
adjusted through
input amplitude
I
C
= 2 mA;
R
= 50
G
0
t
p
t
= 0.01
t
p
T
t = 50
p
s
I
C
Channel I
Channel II
Oscilloscope
100%
90%
R
1 M
L
L
C
20 pF
50
100
95 10890
Figure 1. Test circuit
10%
0
t
t
r
t
s
t
f
t
d
t
on
t
off
t
t
t
t
pulse duration
delay time
rise time
t
t
t
storage time
fall time
turn-off time
p
s
d
f
(= t + t )
r
off
s
f
(= t + t )
turn-on time
on
d
r
Figure 2. Switching times
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
3 (8)
TCST1000/ TCST2000
Vishay Telefunken
Typical Characteristics (Tamb = 25 C, unless otherwise specified)
400
300
200
100
0
10000
1000
100
10
V
I =0
F
=25V
CE
Coupled device
Phototransistor
IR-diode
1
150
100
0
30
60
90
120
0
25
T – Ambient Temperature ( °C )
amb
50
75
95 11088
T
amb
– Ambient Temperature ( °C )
95 11090
Figure 3. Total Power Dissipation vs.
Ambient Temperature
Figure 6. Collector Dark Current vs. Ambient Temperature
10
1000.0
100.0
10.0
1.0
V
=5V
CE
1
0.1
0.01
0.001
0.1
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
– Forward Voltage ( V )
0.1
1
10
I – Forward Current ( mA )
F
96 11862
V
F
95 11083
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Current vs. Forward Current
2.0
10
V
=5V
CE
I =20mA
F
I =50mA
F
1.5
1.0
0.5
0
1
0.1
20mA
10mA
5mA
2mA
0.01
100
100
–25
0
25
50
75
0.1
1
10
95 11089
T
amb
– Ambient Temperature ( °C )
95 11084
V
CE
– Collector Emitter Voltage ( V )
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
Figure 8. Collector Current vs. Collector Emitter Voltage
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4 (8)
Document Number 83762
Rev. A3, 08–Jun–99
TCST1000/ TCST2000
Vishay Telefunken
100
10
1
110
100
90
80
70
60
50
40
30
20
10
0
V
=5V
CE
0
s
0.1
100
–0.5–0.4–0.3–0.2–0.1–0.0 0.1 0.2 0.3 0.4 0.5
s – Displacement ( mm )
0.1
1
10
I – Forward Current ( mA )
F
15141
95 11085
Figure 9. Current Transfer Ratio vs. Forward Current
Figure 11. Relative Collector Current vs. Displacement
20
Non Saturated
Operation
V =5V
R =100
L
15
10
5
S
t
t
on
off
0
10
0
2
4
6
8
95 11086
I – Collector Current ( mA )
C
Figure 10. Turn on / off Time vs. Collector Current
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
5 (8)
TCST1000/ TCST2000
Vishay Telefunken
Dimensions of TCST1000 in mm
96 12099
www.vishay.com
6 (8)
Document Number 83762
Rev. A3, 08–Jun–99
TCST1000/ TCST2000
Vishay Telefunken
Dimensions of TCST2000 in mm
96 12098
Document Number 83762
Rev. A3, 08–Jun–99
www.vishay.com
7 (8)
TCST1000/ TCST2000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
8 (8)
Document Number 83762
Rev. A3, 08–Jun–99
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