TCND5000T [VISHAY]
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| 型号： | TCND5000T |
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VISHAY |
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TCND5000
Vishay Semiconductors
Reflective Optical Sensor with PIN Photodiode Output
Description
The TCND5000 is a reflective sensor that includes an
infrared emitter and PIN photodiode in a surface
mount package which blocks visible light.
Top view
A
C
A
C
Features
• Package type: Surface mount
• Detector type: PIN Photodiode
Detector
Emitter
19967
Marking area
• Dimensions:
e3
L 6 mm x W 4.3 mm x H 3.75 mm
• Peak operating distance: 6 mm
• Peak operating range: 2 mm to 25 mm
Applications
• Proximity sensor
• Object sensor
• Motion sensor
• Touch key
• Typical output current under test: I > 0.11 µA
• Daylight blocking filter
• High linearity
• Emitter wavelength 940 nm
• Lead (Pb)-free soldering released
ra
• Lead (Pb)-free component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity 2000 pcs, 2000 pcs/reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Input (Emitter)
Parameter
Test condition
Symbol
VR
Value
5
Unit
V
Reverse Voltage
IF
Forward current
100
500
mA
mA
tp = 50 µs, T = 2 ms,
Tamb = 25 °C
IFM
Peak Forward Current
PV
Tj
Power Dissipation
190
100
mW
°C
Junction Temperature
Output (Detector)
Parameter
Test condition
Symbol
VR
Value
60
Unit
V
Reverse Voltage
PV
Tj
Power Dissipation
Junction Temperature
75
mW
°C
100
Document Number 83795
Rev. 1.2, 04-Sep-06
www.vishay.com
1
TCND5000
Vishay Semiconductors
Sensor
Parameter
Test condition
Symbol
Tamb
Value
- 40 to + 85
- 40 to + 100
260
Unit
°C
Operating Temperature Range
Storage Temperature Range
Tstg
Tsd
°C
Soldering Temperature
acc. fig. 14
°C
120
100
80
60
40
20
0
0
10 20 30
50 60 70 80 90 100
40
16188
Tamb - Ambient Temperature (°C)
Figure 1. Forward Current Limit vs. Ambient Temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Input (Emitter)
Parameter
Test condition
Symbol
Min
Typ.
1.2
Max
1.5
Unit
V
IF = 20 mA, tp = 20 ms
VF
TKVF
IR
Forward Voltage
Temp. Coefficient of VF
IF = 1 mA
- 1.3
mV/K
µA
V
R = 5 V
Reverse Current
10
75
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA, tp = 20 ms
Cj
Junction Capacitance
Radiant Intensity
25
7
pF
Ie
mW/sr
deg
nm
Angle of Half Intensity
Peak Wavelength
ϕ
12
IF = 100 mA
λp
930
940
50
IF = 100 mA
Spectral Bandwidth
Temp. Coefficient of λp
Δλ
TKλp
tr
nm
IF = 100 mA
0.2
800
800
1.2
nm/K
ns
IF = 100 mA
Rise Time
IF = 100 mA
tf
Fall Time
ns
Virtual Source Diameter
Method: 63 % encircled energy
Ø
mm
see figures 2 to 8 accordingly
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2
Document Number 83795
Rev. 1.2, 04-Sep-06
TCND5000
Vishay Semiconductors
Output (Detector)
Parameter
Test condition
IF = 50 mA
Symbol
VF
Min
60
Typ.
1.0
Max
1.3
Unit
V
Forward Voltage
IR = 100 µA
VBR
Iro
Breakdown Voltage
Reverse Dark Current
Diode capacitance
V
VR = 10 V, E = 0
1
10
nA
pF
V
R = 5 V, f = 1 MHz, E = 0
CD
1.8
Ee = 1 mW/cm2
Ira
Reverse Light Current
12
µA
λ = 950 nm, VR = 5 V
Temp. Coefficient of Ira
VR = 5 V, λ = 870 nm
TKira
0.2
15
%/K
deg
nm
Angle of Half Intensity
ϕ
λp
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
930
λ0.5
840 to 1050
nm
see figures 9 to 12 accordingly
Sensor
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Ira
Min
110
Typ.
Max
Unit
nA
Reverse Light Current
VR = 2.5 V, IF = 20 mA
D = 30 mm
reflective mode:
see figure 2
30 mm
Kodak grey card
20 % Reflectivity
18223
Figure 2. Test Circuit
Document Number 83795
Rev. 1.2, 04-Sep-06
www.vishay.com
3
TCND5000
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
0°
10°
20°
104
103
102
30°
40°
1.0
0.9
50°
60°
tP = 100 µs
tP/T = 0.001
0.8
101
70°
0.7
80°
100
1
0
2
3
4
0.4
0
0.4 0.6
0.6
0.2
0.2
18234
VF - Forward Voltage (V)
13600
Figure 3. Forward Current vs. Forward Voltage
Figure 6. Relative Radiant Intensity vs. Angular Displacement
1000
100
1000
100
10
10
1
VR = 10 V
1
0.1
100
101
IF - Forward Current (mA)
102
103
104
100
Tamb - Ambient Temperature (°C)
Figure 7. Reverse Dark Current vs. Ambient Temperature
20
40
60
80
16189
94 8427
Figure 4. Radiant Intensity vs. Forward Current
1.4
1.25
1.0
VR = 5 V
1.2
1.0
λ
= 950 nm
0.75
0.5
0.8
0.25
IF = 100 mA
0.6
0
20
40
80
100
60
0
890
990
940
14291
Tamb - Ambient Temperature (°C)
94 8416
- Wavelength (nm)
λ
Figure 5. Relative Radiant Power vs. Wavelength
Figure 8. Relative Reverse Light Current vs. Ambient Temperature
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Document Number 83795
Rev. 1.2, 04-Sep-06
4
TCND5000
Vishay Semiconductors
0°
10°
20°
100
10
30°
40°
1.0
0.9
50°
60°
VCE = 5 V
= 950 nm
1.0
0.1
0.8
λ
70°
0.7
80°
0.4 0.2
0.2
0.6
0
0.4 0.6
0.01
0.1
1
10
94 8248
16055
Ee - Irradiance (mW/cm²)
Figure 9. Reverse Light Current vs. Irradiance
Figure 12. Relative Radiant Sensitivity vs. Angular Displacement
8
1.0
Media: Kodak Gray Card
0.8
IF = 10 mA
6
E = 0
f = 1 MHz
0.6
0.4
4
2
0
0.2
0.0
1
0.1
10
100
10
40
45 50
0
5
15 20 25 30 35
94 8430
VR- Reverse Voltage (V)
19966
d - Distance to Reflecting Card (mm)
Figure 13. Relative Reverse Light Current vs. Distance
Figure 10. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
850
λ- Wavelength (nm)
1050
750
950
1150
12786
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Document Number 83795
Rev. 1.2, 04-Sep-06
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5
TCND5000
Vishay Semiconductors
Taping
18222
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6
Document Number 83795
Rev. 1.2, 04-Sep-06
TCND5000
Vishay Semiconductors
Package Dimensions in mm
19968
Document Number 83795
Rev. 1.2, 04-Sep-06
www.vishay.com
7
TCND5000
Vishay Semiconductors
Precautions For Use
Reflow Solder Profiles
1. Over-current-proof
Customer must apply resistors for protection, other-
wise slight voltage shift will cause big current change
(Burn out will happen).
19003
300
max. 260 °C
245 °C
255 °C
250
2. Storage
240 °C
217 °C
200
2.1 Storage temperature and rel. humidity conditions
are: 5 °C to 30 °C, R.H. 60 %
2.2 Floor life must not exceed 72 h, acc. to JEDEC
level 4, J-STD-020.
max. 20 s
150
max. 120 s
max. 100 s
100
Once the package is opened, the products should be
used within 72 h. Otherwise, they should be kept in a
damp proof box with desiccant.
max. Ramp up 3°C/s
max. Ramp down 6°C/s
50
0
50
200
250
0
100
150
300
Considering tape life, we suggest to use products
within one year from production date.
Time (s)
2.3 If opened more than 72 h in an atmosphere 5 °C
to 30 °C, R.H. 60 %, devices should be treated at
60 °C 5 °C for 15 hrs.
Figure 14. Lead (Pb)-Free Reflow Solder Profile
2.4 If humidity indicator in the package shows pink
color (normal blue), then devices should be treated
with the same conditions as 2.3
948625
300
10s
max. 240 °C ca. 230 °C
250
200
215 °C
150
100
max 40s
max. 160 °C
90s - 120s
Lead Temperature
50
0
full line
:typical
2 K/s - 4 K/s
50
dotted
:process limits
100
Time (s)
0
150
200
250
Figure 15. Lead Tin (SnPb) Reflow Solder Profile
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8
Document Number 83795
Rev. 1.2, 04-Sep-06
TCND5000
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83795
Rev. 1.2, 04-Sep-06
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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