SUM110N06-3M9H [VISHAY]
Low Thermal Resistance Package;
| 型号： | SUM110N06-3M9H |
| 厂家： | 
VISHAY |
| 描述： | Low Thermal Resistance Package |
| 文件： | 总6页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUM110N06-3m9H
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
•
TrenchFET® Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
High Threshold Voltage At High Temperature
100 % Rg Tested
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
110a
RoHS
0.0039 at VGS = 10 V
60
200
COMPLIANT
D
TO-263
G
G
D S
Top View
S
Ordering Information: SUM110N06-3m9H-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
C
Parameter
Symbol
Limit
60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
110a
TC = 25 °C
ID
Continuous Drain Current (TJ = 175 °C)
110a
440
70
TC = 125 °C
A
IDM
IAS
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
EAS
L = 0.1 mH
TC = 25 °C
245
mJ
W
375c
3.75
Maximum Power Dissipationb
PD
T
A = 25 °Cd
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
PCB Mountd
RthJA
Junction-to-Ambient
40
°C/W
RthJC
Junction-to-Case (Drain)
Notes:
0.4
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
1
SUM110N06-3m9H
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
Drain-Source Breakdown Voltage
60
V
Gate-Threshold Voltage
Gate-Body Leakage
3.4
4.5
100
1
VDS = 0 V, VGS
=
20 V
nA
VDS = 60 V, VGS = 0 V
DS = 60 V, VGS = 0 V, TJ = 125 °C
DS = 60 V, VGS = 0 V, TJ = 175 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
rDS(on)
gfs
V
V
Zero Gate Voltage Drain Current
On-State Drain Currenta
50
µA
A
250
120
30
VGS = 10 V, ID = 30 A
0.00325
0.0039
0.0063
0.0082
Drain-Source On-State Resistancea
V
V
GS = 10 V, ID = 30 A, TJ = 125 °C
GS = 10 V, ID = 30 A, TJ = 175 °C
VDS = 15 V, ID = 30 A
Ω
S
Forward Transconductancea
Dynamicb
Ciss
Coss
Crss
Rg
Input Capacitance
15 800
1050
600
1.2
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
Ω
f = 1 MHz
0.6
1.8
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Qg
200
80
300
Qgs
Qgd
td(on)
tr
VDS = 30 V, VGS = 10 V, ID = 110 A
nC
45
45
70
240
115
25
160
75
V
DD = 30 V, RL = 0.27 Ω
ns
Turn-Off Delay Timec
Fall Timec
ID ≅ 110 A, VGEN = 10 V, Rg = 2.5 Ω
td(off)
tf
14
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b
IS
ISM
Continuous Current
110
240
1.5
A
Pulsed Current
Forward Voltagea
VSD
trr
IF = 85 A, VGS = 0 V
1.1
65
V
ns
A
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
100
6.6
IRM(REC)
Qrr
IF = 85 A, di/dt = 100 A/µs
4.4
143
330
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
250
250
200
150
100
50
V
GS
= 10 thru 7 V
200
150
100
50
6 V
T
= 125 °C
C
25 °C
4
5 V
- 55 °C
6
0
0
0
2
4
6
8
10
0
1
2
3
5
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
300
250
200
150
100
50
0.006
0.005
0.004
0.003
0.002
0.001
0.000
T
= - 55 °C
C
25 °C
125 °C
V
GS
= 10 V
0
0
15
30
45
60
75
90
0
20
40
60
80
100
120
I
D
- D r ain Current (A)
I
D
- Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
21000
18000
15000
12000
9000
6000
3000
0
20
16
12
8
V
D
= 30 V
DS
= 110 A
C
iss
I
C
oss
4
C
rss
0
0
10
20
30
40
50
60
0
50
100 150 200 250 300 350 400
V
DS
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
g
Capacitance
Gate Charge
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
3
SUM110N06-3m9H
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
100
V
D
= 10 V
GS
= 30 A
I
1.7
1.4
1.1
0.8
0.5
T = 150 °C
J
T = 25 °C
J
10
1
0
- 50 - 25
0
25
50
75 100 125 150 175
0.3
0.6
0.9
1.2
T - J unction Temperature (°C)
J
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1000
100
74
72
70
68
66
64
62
60
I
D
= 10 mA
I
AV
(A) at T = 25 °C
A
10
1
I
AV
(A) at T = 150 °C
A
0.1
- 50 - 25
0
25
50
75 100 125 150 175
0.00001
0.0001
0.001
0.01
(Sec)
0.1
1
t
in
T - Junction Temperature (°C)
J
Drain Source Breakdown
vs. Junction Temperature
Avalanche Current vs. Time
www.vishay.com
4
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
SUM110N06-3m9H
Vishay Siliconix
THERMAL RATINGS
1000
100
10
300
10 µs
*Limited by r
DS(on)
250
200
150
100
100 µs
1 ms
10 ms
dc, 100 ms
1
T
= 25 °C
C
Limited By Package
50
0
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
T
- Case Temperature (°C)
C
*V
GS
minimum V at which r
is specified
GS
DS(on)
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73236.
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明