SUB85N02-06 [VISHAY]
N-Channel 20-V (D-S), 175C MOSFET;
| 型号： | SUB85N02-06 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S), 175C MOSFET |
| 文件： | 总5页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
_C/W
SUP/SUB85N02-06
New Product
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)a
0.006 @ V = 4.5 V
85
85
GS
20
0.009 @ V = 2.5 V
GS
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
Top View
S
SUB85N02-06
N-Channel MOSFET
SUP85N02-06
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
DS
V
V
GS
"12
a
T
C
= 25_C
85
Continuous Drain Current (T = 175_C)
I
D
J
T
C
= 100_C
75
240
30
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
45
mJ
W
AR
a
Power Dissipation
T
C
= 25_C
P
120
D
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
c
PCB Mount (TO-263)
40
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
Free Air (TO-220AB)
62.5
1.25
R
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71287
S-01613—Rev. A, 24-Jul-00
www.vishay.com S FaxBack 408-970-5600
1
SUP/SUB85N02-06
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T=2_5C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
20
0.6
(BR)DSS
GS D
V
V
DS
= V , I = 250 mA
Gate Threshold Voltage
Gate-Body Leakage
V
GS DS
GS(th)
V
DS
= 0 V, V = "12 V
I
"100
1
nA
GS
GSS
V
DS
= 20 V, V = 0 V
GS
Zero Gate Voltage Drain Current
I
V
V
= 20 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 20 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 4.5 V
DS GS
120
A
D(on)
V
= 4.5 V, I = 30 A
D
0.006
0.009
0.0111
0.009
GS
V
V
= 4.5 V, I = 30 A, T = 125_C
GS
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
= 4.5 V, I = 30 A, T = 175_C
GS
D
J
V
GS
= 2.5 V, I = 20 A
D
a
Forward Transconductance
g
fs
V
DS
= 5 V, I = 30 A
20
S
D
Dynamicb
Input Capacitance
C
6600
1150
600
65
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 20 V, f = 1 MHz
pF
nC
DS
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
130
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 10 V, V = 4.5 V, I = 85 A
13
GS
D
c
Gate-Drain Charge
14
c
Turn-On Delay Time
t
25
40
d(on)
c
Rise Time
t
120
80
180
120
150
r
V
= 10 V, R = 0.12 W
L
DD
ns
c
I
D
] 85 A, V
= 4.5 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
100
f
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Pulsed Current
I
240
1.5
A
V
SM
a
Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
45
GS
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ms
100
ns
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 71287
S-01613—Rev. A, 24-Jul-00
www.vishay.com S FaxBack 408-970-5600
2
SUP/SUB85N02-06
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
120
3.5 V
3 V
V
GS
= 4.5, 4 V
100
80
60
40
20
0
2.5 V
T
= 125_C
C
2 V
25_C
1 V
1.5 V
–55_C
0
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
160
120
80
40
0
0.010
0.008
0.006
0.004
0.002
0
T
C
= –55_C
25_C
V
GS
= 2.5 V
125_C
V
GS
= 4.5 V
0
20
40
60
80
100
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
10000
8000
6000
4000
2000
0
12
9
V
= 10 V
= 50 A
DS
I
D
C
iss
6
3
C
oss
C
rss
0
0
4
8
12
16
20
0
30
60
Q – Total Gate Charge (nC)
g
90
120
150
V
– Drain-to-Source Voltage (V)
DS
Document Number: 71287
S-01613—Rev. A, 24-Jul-00
www.vishay.com S FaxBack 408-970-5600
3
SUP/SUB85N02-06
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
1.6
1.2
0.8
0.4
0
100
V
= 4.5 V
= 30 A
GS
I
D
T = 150_C
T = 25_C
J
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature
Safe Operating Area
1000
100
80
60
40
20
0
10 ms
100 ms
100
1 ms
Limited
by r
10 ms
100 ms
dc
DS(on)
10
1
T
= 25_C
A
0.1
Single Pulse
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
A
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
t
1
0.05
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 40_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–3
–6
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71287
S-01613—Rev. A, 24-Jul-00
www.vishay.com S FaxBack 408-970-5600
4
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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