SST204-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB, LEAD FREE, TO-236, 3 PIN;
| 型号： | SST204-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB, LEAD FREE, TO-236, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J/SST201 Series
Vishay Siliconix
N-Channel JFETs
J201
J202
J204
SST201
SST202
SST204
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS) IDSS Min (mA)
J/SST201
J/SST202
J/SST204
−0.3 to −1.5
−0.8 to −4
−0.3 to −2
−40
−40
−25
0.5
1
0.2
0.9
0.2
0.5
FEATURES
BENEFITS
APPLICATIONS
D Low Cutoff Voltage: J201 <1.5 V
D High Input Impedance
D Full Performance from Low Voltage
D High-Gain, Low-Noise Amplifiers
Power Supply: Down to 1.5 V
D Low-Current, Low-Voltage
D Low Signal Loss/System Error
Battery-Powered Amplifiers
D Very Low Noise
D High System Sensitivity
D Infrared Detector Amplifiers
D High Gain: AV = 80 @ 20 mA
D High Quality Low-Level Signal
D Ultra High Input Impedance
Amplification
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
D
S
D
S
1
2
3
G
G
3
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
Top View
J201
J202
J204
*Marking Code for TO-236
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 V
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
c
J/SST201
J/SST202
J/SST204
Parameter
Symbol
Test Conditions
Typa Min Max Min Max
Min
Max Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= −1 mA , V = 0 V
−40
−40
−25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 nA
−0.3
−1.5
1
−0.8
−4
4.5
−0.3
−2
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
0.2
0.9
0.2
3
mA
pA
nA
DSS
DS
GS
V
= −20 V, V = 0 V
−2
−1
−2
2
−100
−100
−100
GS
DG
DS
Gate Reverse Current
I
GSS
T
= 125_C
A
Gate Operating Current
Drain Cutoff Current
I
G
V
= 10 V, I = 0.1 mA
D
pA
V
I
V
= 15 V, V = −5 V
DS GS
D(off)
Gate-Source Forward Voltage
V
I
= 1 mA , V = 0 V
0.7
GS(F)
G
DS
Dynamic
Common-Source
V
= 15 V, V = 0 V
GS
DS
g
0.5
1
0.5
mS
pF
fs
Forward Transconductance
f = 1 kHz
Common-Source
Input Capacitance
C
iss
4.5
1.3
6
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
Common-Source
Reverse Transfer Capacitance
C
rss
= 10 V, V = 0 V
GS
f = 1 kHz
nV⁄
√Hz
Equivalent Input Noise Voltage
e
n
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
NPA, NH
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
2
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
10
5
10 nA
1 nA
I
G
@ I = 500 mA
D
IDSS @ VDS = 10 V, VGS = 0 V
g
@ VDS = 10 V, VGS = 0 V
I
D
= 100 mA
fs
f = 1 kHz
8
T
A
= 125_C
4
I
@ 125_C
GSS
100 pA
10 pA
1 pA
6
4
3
2
1
0
g
fs
I
= 500 mA
D
I
DSS
I
D
= 100 mA
@ 25_C
T
A
= 25_C
2
0
I
GSS
0.1 pA
0
−1
−2
−3
−4
−5
0
15
30
V
GS(off) − Gate-Source Cutoff Voltage (V)
V
− Drain-Gate Voltage (V)
DG
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
1500
10
2
V
= −1.5 V
V
= 10 V
DS
GS(off)
f = 1 kHz
g
os
1.6
1.2
1200
900
600
300
0
8
6
T
A
= −55_C
rDS
25_C
4
2
0
0.8
125_C
0.4
0
rDS @ ID = 100 mA, VGS = 0 V
g
os
@ VDS = 10 V, VGS = 0 V, f = 1 kHz
0
−1
−2
−3
−4
−5
0.01
0.1
1
V
GS(off) − Gate-Source Cutoff Voltage (V)
ID − Drain Current (mA)
Output Characteristics
Output Characteristics
400
2
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VGS = 0 V
360
240
1.6
1.2
V
= 0 V
GS
−0.1 V
−0.2 V
−0.3 V
160
0.8
0.4
0
−0.6 V
−0.9 V
−0.3 V
−0.4 V
80
0
−0.5 V
−1.2 V
0
4
8
12
16
20
0
4
8
12
16
20
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
3
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
2
500
V
= −1.5 V
V
= 10 V
DS
GS(off)
V
= −0.7 V
VDS = 10 V
GS(off)
1.6
1.2
400
300
200
T
A
= −55_C
25_C
T
= −55_C
A
25_C
0.8
0.4
0
125_C
100
0
125_C
0
−0.1
−0.2
−0.3
−0.4
−0.5
0
−0.4
−0.8
−1.2
−1.6
−2
V
GS − Gate-Source Voltage (V)
V
− Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
4
1.5
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
VGS(off) = −0.7 V
VDS = 10 V
f = 1 kHz
3.2
2.4
1.2
0.9
0.6
T
A
= −55_C
25_C
T
A
= −55_C
25_C
1.6
0.8
0
125_C
0.3
0
125_C
0
−0.4
−0.8
−1.2
−1.6
−2
0
−0.1
−0.2
−0.3
−0.4
−0.5
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
200
2000
g
R
L
fs
A
+
V
1 ) R g
os
L
160
120
1600
1200
Assume V = 15 V, V = 5 V
DD
DS
10 V
VGS(off) = −0.7 V
R
+
I
L
D
80
800
VGS(off) = −0.7 V
−1.5 V
−1.5 V
40
0
400
0
0.01
0.1
D − Drain Current (mA)
1
0.01
0.1
1
I
ID − Drain Current (mA)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
4
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
5
f = 1 MHz
f = 1 MHz
8
4
3
2
1
0
6
4
VDS = 0 V
VDS = 0 V
10 V
2
0
10 V
0
−4
−8
−12
−16
−20
0
−4
−8
−12
−16
−20
V
GS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
Output Conductance vs. Drain Current
Equivalent Input Noise Voltage vs. Frequency
3
20
V
= −1.5 V
V
= 10 V
DS
GS(off)
VDS = 10 V
f = 1 kHz
2.4
16
ID @ 100 mA
1.8
0.8
12
8
T
= −55_C
A
25_C
VGS = 0 V
0.4
0
4
0
125_C
0.01
0.1
− Drain Current (mA)
1
10
100
1 k
10 k
100 k
I
D
f − Frequency (Hz)
Output Characteristics
Output Characteristics
300
240
1.0
0.8
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VGS = 0 V
VGS = 0 V
−0.1
−0.3
−0.6
180
120
60
0.6
0.4
0.2
0
−0.2
−0.3
−0.4
−0.5
−0.9
−1.2
0
0
0.5
0
1.0
0.1
0.2
0.3
0.4
0.2
0.4
0.6
0.8
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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